Gold-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide

Author(s):  
N. A. Lunev ◽  
A. O. Zamchiy ◽  
E. A. Baranov ◽  
I. E. Merkulova ◽  
V. O. Konstantinov ◽  
...  
2020 ◽  
Vol 46 (6) ◽  
pp. 583-586
Author(s):  
A. O. Zamchiy ◽  
E. A. Baranov ◽  
I. E. Merkulova ◽  
N. A. Lunev ◽  
V. A. Volodin ◽  
...  

2019 ◽  
Vol 196 ◽  
pp. 00039
Author(s):  
Alexandr Zamchiy ◽  
Evgeniy Baranov ◽  
Sergey Khmel ◽  
Marat Sharafutdinov

Polycrystalline silicon (poly-Si) thin films were obtained by aluminium induced crystallisation of amorphous silicon suboxide (a-SiOx, x = 0.22) via annealing of a-SiO0.22/Al bilayer structures at 550 °C for 4 - 30 h. The a-SiO0.22/Al thickness ratio was approximately 1. According optical microscopy measurements, the crystallized fraction reached the saturation value of 85% after annealing for 20 h. The further increase in the annealing time didn’t lead to an increase in this value. X-ray diffraction measurements revealed that the formed poly-Si had a strong Si (111) preferred orientation.


2021 ◽  
pp. 129723
Author(s):  
A.O. Zamchiy ◽  
E.A. Baranov ◽  
I.E. Merkulova ◽  
I.V. Korolkov ◽  
V.I. Vdovin ◽  
...  

2013 ◽  
Author(s):  
Lu Huang ◽  
Jing Jin ◽  
Guohua Wang ◽  
Weimin Shi ◽  
Weiguang Yang ◽  
...  

2002 ◽  
Vol 41 (Part 1, No. 11A) ◽  
pp. 6356-6357
Author(s):  
Guo-Ren Hu ◽  
Yew-Chung Sermon Wu ◽  
Chi-Wei Chao ◽  
Tian-Jiun Huang

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