THE STACKING-FAULT ENERGY IN α-SILVER – TIN ALLOYS

1967 ◽  
Vol 45 (2) ◽  
pp. 787-795 ◽  
Author(s):  
A. W. Ruff Jr. ◽  
L. K. Ives
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Pure Silver ◽  
Tin Alloys ◽  
Transmission Electron ◽  
Direct Measurements ◽  
Extended Dislocation

Direct measurements by transmission electron microscopy on extended dislocation nodes in alloys of tin in silver have led to values for the intrinsic stacking-fault energy. The values decreased smoothly from 23 erg/cm2 for pure silver to 4.2 erg/cm2 for 7.8 at.% tin. The results are compared with previous determinations in other silver-base alloys.

Studies of Extended Dislocation Configurations in HCP Silver-Tin Alloys

1968 ◽  
Vol 26 ◽  
pp. 268-269
Author(s):  
A. W. Ruff ◽  
L. K. Ives
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Tin Alloys ◽  
Thin Foils ◽  
Transmission Electron ◽  
Hcp Structure ◽  
Means Of Transmission ◽  
Extended Dislocation

Recently we have reported the stacking fault energy in a series of hcp silver-tin alloys as a function of composition. The stacking fault energy was found to increase linearly with composition from 5.5 erg/cm2 for an 11.9 at.% tin alloy to 18.9 erg/cm2 for a 17.2 at.% tin alloy. Measurements were made on extended dislocation nodes and double-ribbons observed in thin foils by means of transmission electron microscopy. During the course of this investigation a number of dislocation configurations were observed as the result of interactions between extended dislocations lying on adjacent basal planes. Many of these configurations were identical to those which have been extensively studied by Delavignette and Amelinckx in hexagonal graphite. The same basal plane faulting pattern is found there as in the hcp structure. We have observed other configurations in these alloys that could be associated with cross-slip of basal dislocations or with their interactions with non-basal dislocations. It is the purpose of this paper to discuss faulting in the hcp structure and to describe several of the dislocation configurations observed in these silver-tin alloys.

Dislocations and stacking faults in stainless steel

1957 ◽  
Vol 240 (1223) ◽  
pp. 524-538 ◽  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stainless Steel ◽  
Grain Boundaries ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Thin Sections ◽  
Partial Dislocations ◽  
Transmission Electron

Further experiments by transmission electron microscopy on thin sections of stainless steel deformed by small amounts have enabled extended dislocations to be observed directly. The arrangement and motion of whole and partial dislocations have been followed in detail. Many of the dislocations are found to have piled up against grain boundaries. Other observations include the formation of wide stacking faults, the interaction of dislocations with twin boundaries, and the formation of dislocations at thin edges of the foils. An estimate is made of the stacking-fault energy from a consideration of the stresses present, and the properties of the dislocations are found to be in agreement with those expected from a metal of low stacking-fault energy.

DISLOCATION DISSOCIATION IN HIGH Tc BiSrCaCuO

1989 ◽  
Vol 03 (17) ◽  
pp. 1359-1362 ◽  
Author(s):  
FANG LIU ◽  
HUI GU ◽  
TIAN XIAO LIN ◽  
JIN LONG ZHANG ◽  
GUANG CHENG XIONG ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Basal Plane ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
High Tc ◽  
Type Formula ◽  
Transmission Electron ◽  
Dislocation Dissociation

Transmission electron microscopy (TEM) shows that the dislocation on basal plane (001) of high T c BiSrCaCuO can dissociate into 2 partials of the type [Formula: see text]. The related stacking fault energy is estimated of the order about µb/365 similar to that observed in Cu and implication of this finding has been discussed.

Periodic {001} Walls of Defects in Proton-Irradiated Cu and Ni

1986 ◽  
Vol 82 ◽  
Author(s):  
P. Ehrhart ◽  
W. Jäger ◽  
W. Schilling ◽  
F. Dworschak ◽  
Afaf A. Gadalla ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Defect Structure ◽  
Average Concentration ◽  
Stacking Fault ◽  
Dislocation Loops ◽  
Transmission Electron ◽  
Stacking Fault Tetrahedra

ABSTRACTThe evolution of the defect structure in 3 MeV-proton irradiated Cu and Ni has been investigated by transmission electron microscopy and by differential dilatometry. The proton irradiations were performed at T≦100°C up to irradiation doses of 2 dpa. An efficient loss of selfinterstitial atoms at dislocations and a consequently high average concentration of vacancies in clusters is observed starting from rather low fluences. In addition an ordering of the defects in the form of periodic {001} walls with a typical periodicity length of ≈ 60 nm is observed for all equivalent {001} planes. The walls consist of high local concentrations of dislocations, dislocation loops and stacking-fault tetrahedra. The observed formation of periodic arraysof defect walls is considered as an example for a possibly general microstructural phenomenon in metals under irradiation.

scholarly journals Microstructure Evolution in He-Implanted Si at 600 °C Followed by 1000 °C Annealing

Materials ◽  
2021 ◽  
Vol 14 (17) ◽  
pp. 5107
Author(s):  
Zhen Yang ◽  
Zhiping Zou ◽  
Zeyang Zhang ◽  
Yubo Xing ◽  
Tao Wang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Single Crystal ◽  
Microstructure Evolution ◽  
Cavity Growth ◽  
Stacking Fault ◽  
Structural Defects ◽  
Dislocation Loops ◽  
Transmission Electron

Si single crystal was implanted with 230 keV He+ ions to a fluence of 5 × 1016/cm2 at 600 °C. The structural defects in Si implanted with He at 600 °C and then annealed at 1000 °C were investigated by transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The microstructure of an as-implanted sample is provided for comparison. After annealing, rod-like defects were diminished, while tangled dislocations and large dislocation loops appeared. Dislocation lines trapped by cavities were directly observed. The cavities remained stable except for a transition of shape, from octahedron to tetrakaidecahedron. Stacking-fault tetrahedrons were found simultaneously. Cavity growth was independent of dislocations. The evolution of observed lattice defects is discussed.

Defects in Mbe-Grown GaAs/ScxEr1–xAs/GaAs Layers

1990 ◽  
Vol 198 ◽  
Author(s):  
Jane G. Zhu ◽  
Chris J. Palmstrdøm ◽  
C. Barry Carter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Growth Stage ◽  
Molecular Beam ◽  
Gaas Layer ◽  
Stacking Fault ◽  
Initial Growth ◽  
Gaas Substrates ◽  
Transmission Electron

ABSTRACTThe microstructure and the structure of defects in GaAs/ScxEr1–xAs/GaAs (x=0 and 0.3) heterostructures grown on (100) GaAs substrates by molecular beam epitaxy have been characterized using transmission electron microscopy. The top GaAs layer forms islands on ScxEr1–xAs at the initial growth stage, and the area covered by GaAs varies with the growth temperature. In addition to regions of epitactic (100) GaAs, regions of {122}- and (111)-oriented GaAs are observed on (100)-oriented ScxEr1–xAs. A high density of stacking-fault pyramids is found in epilayers of GaAs grown on a thin epilayer of ErAs, where the ErAs layers are only one or two monolayers thick. The apex of each stacking-fault pyramid is located at the ScxEr1–xAs/GaAs interface.

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