Electromagnetic interactions of high-energy muons

1968 ◽  
Vol 46 (10) ◽  
pp. S361-S364 ◽  
Author(s):  
F. Ashton ◽  
R. B. Coats ◽  
D. A. Simpson

The nearly horizontal muon flux at sea level has been used to study the interactions of high-energy (34–520 GeV) muons in an iron absorber producing energy transfer in the range 3–240 GeV. No significant divergence from accepted theory has been found.

1971 ◽  
Vol 4 (2) ◽  
pp. 177-196 ◽  
Author(s):  
S. Chin ◽  
Y. Hanayama ◽  
T. Hara ◽  
S. Higashi ◽  
T. Kitamura ◽  
...  

1964 ◽  
Vol 32 (1) ◽  
pp. 1-13 ◽  
Author(s):  
S. Higashi ◽  
T. Kitamura ◽  
Y. Watase ◽  
M. Oda ◽  
Y. Tanaka

1968 ◽  
Vol 46 (10) ◽  
pp. S297-S300 ◽  
Author(s):  
S. Chin ◽  
Y. Hanayama ◽  
T. Hara ◽  
S. Higashi ◽  
T. Kitamura ◽  
...  

Bursts produced by high-energy muons in rock have been observed at a depth of 40 m.w.e. underground by the use of two layers of scintillator 20 m2 in area and 2 m apart. The size distribution of bursts with several hundreds to 30 000 relativistic particles was obtained during an observing time of 11 424.13 hours. Following the method of Christy and Kusaka (1941), the energy spectrum of muons up to 10 TeV was derived from the burst-size distribution.


2021 ◽  
Vol 7 (9) ◽  
pp. eabe2209
Author(s):  
S. Lamon ◽  
Y. Wu ◽  
Q. Zhang ◽  
X. Liu ◽  
M. Gu

Nanoscale optical writing using far-field super-resolution methods provides an unprecedented approach for high-capacity data storage. However, current nanoscale optical writing methods typically rely on photoinitiation and photoinhibition with high beam intensity, high energy consumption, and short device life span. We demonstrate a simple and broadly applicable method based on resonance energy transfer from lanthanide-doped upconversion nanoparticles to graphene oxide for nanoscale optical writing. The transfer of high-energy quanta from upconversion nanoparticles induces a localized chemical reduction in graphene oxide flakes for optical writing, with a lateral feature size of ~50 nm (1/20th of the wavelength) under an inhibition intensity of 11.25 MW cm−2. Upconversion resonance energy transfer may enable next-generation optical data storage with high capacity and low energy consumption, while offering a powerful tool for energy-efficient nanofabrication of flexible electronic devices.


The Holocene ◽  
2018 ◽  
Vol 29 (1) ◽  
pp. 26-44 ◽  
Author(s):  
Manel Leira ◽  
Maria C Freitas ◽  
Tania Ferreira ◽  
Anabela Cruces ◽  
Simon Connor ◽  
...  

We examine the Holocene environmental changes in a wet dune slack of the Portuguese coast, Poço do Barbarroxa de Baixo. Lithology, organic matter, biological proxies and high-resolution chronology provide estimations of sediment accumulation rates and changes in environmental conditions in relation to sea-level change and climate variability during the Holocene. Results show that the wet dune slack was formed 7.5 cal. ka BP, contemporaneous with the last stages of the rapid sea-level rise. This depositional environment formed under frequent freshwater flooding and water ponding that allowed the development and post-mortem accumulation of abundant plant remains. The wetland evolved into mostly palustrine conditions over the next 2000 years, until a phase of stabilization in relative sea-level rise, when sedimentation rates slowed down to 0.04 mm yr−1, between 5.3 and 2.5 cal. ka BP. Later, about 0.8 cal. ka BP, high-energy events, likely due to enhanced storminess and more frequent onshore winds, caused the collapse of the foredune above the wetlands’ seaward margin. The delicate balance between hydrology (controlled by sea-level rise and climate change), sediment supply and storminess modulates the habitat’s resilience and ecological stability. This underpins the relevance of integrating past records in coastal wet dune slacks management in a scenario of constant adaptation processes.


ChemPhysChem ◽  
2005 ◽  
Vol 6 (1) ◽  
pp. 129-138 ◽  
Author(s):  
Fausto Puntoriero ◽  
Scolastica Serroni ◽  
Maurilio Galletta ◽  
Alberto Juris ◽  
Antonino Licciardello ◽  
...  
Keyword(s):  

1998 ◽  
Vol 510 ◽  
Author(s):  
P. Leveque ◽  
S. Godey ◽  
P.O. Renault ◽  
E. Ntsoenzok ◽  
J.F. Barbot

AbstractCommercial n-type 4H-SiC wafers were implanted with doses of MeV alpha particles, high enough to cause majority carrier modification. Analysis of infrared reflectivity spectra shows that the implanted crystals can be divided into three layers: a surface layer of about 30 nm followed by a compensation layer where the energy transfer of the incident particles is low and an overdoping layer in the region of maximum defect production, i.e. near the theoretical mean range of ions Rp


Sign in / Sign up

Export Citation Format

Share Document