An improved conventional Se–CdO photovoltaic cell

1985 ◽  
Vol 63 (6) ◽  
pp. 767-771 ◽  
Author(s):  
C. H. Champness ◽  
K. Ghoneim ◽  
J. K. Chen
Keyword(s):  
Heat Treatment ◽  
Direct Current ◽  
Annealing Temperature ◽  
Open Circuit Voltage ◽  
Reactive Sputtering ◽  
Photovoltaic Cell ◽  
Open Circuit ◽  
Selenium Film ◽  
Extra Oxygen

Studies previously carried out to improve the Se–CdO photovoltaic cell have emphasized optimization of the deposition of the CdO by direct current (DC) reactive sputtering. Attention has now been turned towards improving the deposition, doping, and heat treatment of the polycrystalline selenium base. It has been found that heat treatment of the selenium film on its substrate of aluminum and bismuth in air or oxygen prior to CdO deposition results in an increase in the illuminated open-circuit voltage (Voc) of the cell. The effect increased with increase of annealing temperature from 150 to 195 °C and in going from dry to wet oxygen. No increase in Voc was found by heating in nitrogen. The effect could be due to the formation of higher stoichiometric and hence higher resistivity CdO at the Se–CdO junction, arising from the presence of extra oxygen on the selenium surface.

High open-circuit voltage in UV photovoltaic cell based on polymer/inorganic bilayer structure

2006 ◽  
Vol 330 (3) ◽  
pp. 501-505 ◽  
Author(s):  
Hui Jin ◽  
Yanbing Hou ◽  
Xianguo Meng ◽  
Feng Teng
Keyword(s):  
Open Circuit Voltage ◽  
Photovoltaic Cell ◽  
Open Circuit ◽  
Bilayer Structure

NITRIDE BASED SCHOTTKY-BARRIER PHOTOVOLTAIC DEVICES

2007 ◽  
Vol 1040 ◽  
Author(s):  
Balakrishnam R Jampana ◽  
Omkar K Jani ◽  
Hongbo Yu ◽  
Ian T Ferguson ◽  
Brian E McCandless ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Annealing Temperature ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Schottky Contact ◽  
Open Circuit ◽  
Photovoltaic Devices ◽  
Current Increase ◽  
Uv Illumination

AbstractSchottky-barrier photovoltaic devices are fabricated by selective metal deposition on p-GaN. A 1.25 V open-circuit voltage is observed for the best device. Devices were optimized by annealing in forming gas at temperatures ranging from 550°C to 700°C. Annealing time and forming gas flow rate are used to control the metal-semiconductor Schottky barrier formation. Optimum fabrication parameters are achieved based on photovoltaic response from the devices under UV illumination. Barrier heights (0.47 eV - 0.49 eV) were used as basis to compare the device response. The Schottky-barrier height is very sensitive to processing conditions, for example a 2.5% increase in barrier height is observed when Schottky contact annealing temperature is changed from 600 °C to 650 °C. Under UV illumination, the open-circuit voltage and short-circuit current increase with increasing annealing temperature while the series resistance decreases under such conditions.

Reduction of open circuit voltage loss in a polymer photovoltaic cell via interfacial molecular design: Insertion of a molecular spacer

2013 ◽  
Vol 103 (20) ◽  
pp. 203902 ◽  
Author(s):  
David Bilby ◽  
Jojo Amonoo ◽  
Matthew E. Sykes ◽  
Bradley Frieberg ◽  
Bingyuan Huang ◽  
...  
Keyword(s):  
Open Circuit Voltage ◽  
Molecular Design ◽  
Photovoltaic Cell ◽  
Open Circuit ◽  
Voltage Loss

scholarly journals Исследование влияния термического отжига на фотоэлектрические свойства гетероструктур GaP/Si, полученных методом атомно-слоевого плазмохимического осаждения

2019 ◽  
Vol 53 (8) ◽  
pp. 1095
Author(s):  
А.В. Уваров ◽  
К.С. Зеленцов ◽  
А.С. Гудовских
Keyword(s):  
Atomic Layer Deposition ◽  
Annealing Temperature ◽  
Open Circuit Voltage ◽  
Sharp Decrease ◽  
Atomic Layer ◽  
Open Circuit ◽  
Nucleation Layer ◽  
Photovoltaic Properties ◽  
Layer Deposition ◽  
Photovoltaic Characteristics

AbstractThe effect of thermal annealing on the photovoltaic properties of a GaP/Si heterostructures obtained by plasma-enhanced atomic layer deposition under different conditions is examined. It is shown that in the structures containing amorphous GaP, annealing at 550°C leads to a sharp decrease in the quantum efficiency and open-circuit voltage, while in the structures with microcrystalline GaP on an epitaxial sublayer, the photovoltaic characteristics are improved. Annealing at a temperature of 750°C improves the photovoltaic characteristics in all the structures due to the diffusion of phosphorus atoms from GaP to Si and leads to the formation of a layer with n -type conductivity in the substrate. As the annealing temperature is increased to 900°C, the carrier lifetime in the silicon substrate decreases. It is shown that the atomic-layer-deposition technique is promising for the formation of a GaP nucleation layer on the surface of silicon before subsequent epitaxial growth.

Ascent of open-circuit voltage on diamond-like carbon photovoltaic cell by infrared heating-assisted pulsed-laser deposition

2010 ◽  
Vol 101 (4) ◽  
pp. 727-733
Author(s):  
Ken Takayama ◽  
Senri Soma ◽  
Taiji Inoue ◽  
Hideaki Kakinuma ◽  
Takashi Haraguchi ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Open Circuit Voltage ◽  
Pulsed Laser ◽  
Photovoltaic Cell ◽  
Open Circuit ◽  
Laser Deposition ◽  
Infrared Heating ◽  
Diamond Like Carbon

A novel thermo-photovoltaic cell with quantum-well for high open circuit voltage

2015 ◽  
Vol 83 ◽  
pp. 61-70 ◽  
Author(s):  
Ezzat Sadat Kouhsari ◽  
Rahim Faez ◽  
Maedeh Akbari Eshkalak
Keyword(s):  
Quantum Well ◽  
Open Circuit Voltage ◽  
Photovoltaic Cell ◽  
Open Circuit

scholarly journals Concept Designing of a Solar Photovoltaic UPS System with Sunlight Tracker

2021 ◽  
Vol 9 (VII) ◽  
pp. 1391-1394
Author(s):  
Dr. Gaurav Srivastava
Keyword(s):  
Peak Power ◽  
Open Circuit Voltage ◽  
Tracking System ◽  
Photovoltaic Cell ◽  
Electrical Equipment ◽  
Open Circuit ◽  
Solar Photovoltaic ◽  
Pv Panel ◽  
Secondary Load ◽  
Power Point

This paper defines the design of UPS system with the help of sun tracking system, as a source for chargingthe battery to provide the backup power when the regular power source fails. This authentication is provided by obtaining the theoretical calculation of output power, output current and output voltage which are developed due to solar radiations. In this system, if the primary load is not in use, then the power is automatically switching over to secondary load. Basically, an UPS is electrical equipment that is used at the time of emergency. The battery bank is charged with the help of solar photovoltaic cell. This paper proposed an approach to understand the peak power point of the sun based on analysis of the open-circuit voltage of the PV panel. This project provides the power supply to a load which is uninterruptible, by automatically selecting the supply from the main source or inverter.

All-polymer indoor photovoltaics with high open-circuit voltage

2019 ◽  
Vol 7 (46) ◽  
pp. 26533-26539 ◽  
Author(s):  
Zicheng Ding ◽  
Ruyan Zhao ◽  
Yingjian Yu ◽  
Jun Liu
Keyword(s):  
Open Circuit Voltage ◽  
Photovoltaic Cell ◽  
Open Circuit ◽  
Light Illumination

An all-polymer photovoltaic cell shows an efficiency of 27.4% with a high open-circuit voltage of 1.16 V under indoor light illumination.

Temperature Dependence of Commercially Available Betavoltaic Cells

2016 ◽  
Author(s):  
Darrell Cheu ◽  
Thomas Adams ◽  
Shripad Revankar
Keyword(s):  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Photovoltaic Cell ◽  
Open Circuit ◽  
Maximum Power ◽  
Electrical Performance ◽  
Portable Devices ◽  
Cold Environments ◽  
Run Off

There is an increasing need for devices that can be powered for extended periods of time where it is difficult or impossible to maintain or replace, such as pacemakers, long term space flight or undisturbed sensors for military use. Presently, most portable devices run off a Lithium-Iodide battery, which gives a high amount of power but could only last approximately 2 to 5 years, requiring frequent replacement. However, replacement is unnecessary for betavoltaic cells as they can last at least 20 years. City Labs Inc. received a general license for commercially available tritium betavoltaic cells that were validated at extreme temperatures without permanent degradation. To fully determine the effectiveness of a betavoltaic cell, the electrical performance (I-V curves) of three betavoltaics were evaluated while temperatures were ramped up and down from −30°C to 70°C. Short circuit current, open circuit voltage, maximum power and fill factor were used to compare electrical performance. Results indicated that the open-circuit voltage and maximum power decreased as temperature increased, suggesting that betavoltaic cells are suited for cold environments below 0°C, such as during nightfall when a photovoltaic cell may not be used.

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