Effect of temperature on cyclic voltammograms during the electrodeposition of lead

1989 ◽  
Vol 67 (1) ◽  
pp. 130-136 ◽  
Author(s):  
Magdy Girgis ◽  
Edward Ghali
Keyword(s):  
Analytical Study ◽  
Ammonium Acetate ◽  
Deposition Process ◽  
Lead Chloride ◽  
Effect Of Temperature ◽  
Cyclic Voltammograms ◽  
Tafel Slopes ◽  
As Adsorption ◽  
And Diffusion ◽  
Potentiostatic Transients

The electrochemical behavior of lead deposition process in a temperature range between 25 and 75 °C was studied in a medium of lead chloride and ammonium acetate by linear and cyclic sweep perturbation. The study was undertaken on four substrates: Pb, Cu, Ag, and C. An increase in temperature resulted in accelerating the deposition process and promoted dendrite formation. Moreover, different kinetic parameters such as adsorption isotherms, Tafel slopes, and diffusion coefficient were affected as a function of temperature elevation. Surface analytical study performed by Auger electron spectroscopy revealed an increase in peak intensities of Cl and Pb as the temperature increased. Keywords: electrodeposition, cyclic voltammetry, potentiostatic transients, underpotential deposition, temperature effect.

Water sorption and diffusion in a short-side-chain perfluorosulfonic acid ionomer membrane for PEMFCS: effect of temperature and pre-treatment

Desalination ◽  
2006 ◽  
Vol 193 (1-3) ◽  
pp. 398-404 ◽  
Author(s):  
M.G. De Angelis ◽  
S. Lodge ◽  
M. Giacinti Baschetti ◽  
G.C. Sarti ◽  
F. Doghieri ◽  
...  
Keyword(s):  
Water Sorption ◽  
Effect Of Temperature ◽  
Side Chain ◽  
Perfluorosulfonic Acid ◽  
Short Side ◽  
Pre Treatment ◽  
And Diffusion

Improvement of Chemical Liquid Vaporized Infiltration Process for Fast Densification of Carbon/Carbon Composites

2008 ◽  
Vol 368-372 ◽  
pp. 1038-1040
Author(s):  
Yong Hui Zhang ◽  
Ji Ping Wang ◽  
Zhi Hao Jin
Keyword(s):  
Carbon Fibers ◽  
Diffusion Path ◽  
Deposition Process ◽  
Carbon Composites ◽  
Thermal Gradients ◽  
Heat Sources ◽  
Infiltration Process ◽  
Flat Surfaces ◽  
Rapid Fabrication ◽  
And Diffusion

An improved chemical liquid vaporized infiltration process was developed to fast densify carbon/carbon (C/C) composites. A disc-shaped carbon felt was chosen as preform, whose upper and lower sides were fixed and heated simultaneously by two flat surfaces of two heat sources, and the precursor was heated by the third heat source separated. By this method, carbon felts (bulk density ~0.2 g/cm3) were densified to C/C composites with density of 1.29, 1.61 and 1.72 g/cm3 when prepared for 3h at 900°C, 1000°C and 1100°C, respectively. Scanning electron microscopy (SEM) reveals that the carbon fibers of the composite are surrounded by ring-shaped pyrocarbon. The deposition process is analyzed by dividing the reactor into four regions associated with specific functions and the reasons for the rapid fabrication are proposed as the short convection and diffusion path for the precursor and the existing thermal gradients across the preform.

VOLTAIC CELLS IN FUSED SALTS: PART II. THE SYSTEMS: (a) SILVER – SILVER CHLORIDE, LEAD – LEAD CHLORIDE; (b) SILVER – SILVER CHLORIDE, ZINC – ZINC CHLORIDE; AND (c) SILVER – SILVER CHLORIDE, NICKEL – NICKELOUS CHLORIDE

1957 ◽  
Vol 35 (11) ◽  
pp. 1254-1259 ◽  
Author(s):  
S. N. Flengas ◽  
T. R. Ingraham
Keyword(s):  
Zinc Chloride ◽  
Dissociation Constants ◽  
Silver Chloride ◽  
Reference Electrode ◽  
Lead Chloride ◽  
Effect Of Temperature ◽  
Fused Salts ◽  
Electrode Potentials ◽  
Silver Silver ◽  
Silver Silver Chloride

Using a reversible silver – silver chloride reference electrode, described in the first paper of this series, standard electrode potentials have been established for the systems lead – lead chloride, zinc – zinc chloride, and nickel – nickelous chloride, in melts containing equimolar quantities of KCl and NaCl. Deviations from ideality were observed, and these were attributed to the formation of complexes. Dissociation constants for the complexes were calculated. The effect of temperature on the electromotive forces of the voltaic cells was also measured, and the heats of the cell reactions were calculated from the data.

Rutherford backscattering & TEM studies of nitrogen, oxygen & argon incorporation in sputter-deposited titanium nitride films

1987 ◽  
Vol 45 ◽  
pp. 250-251
Author(s):  
J.M. Brown ◽  
F.A. Baiocchi ◽  
D.S. Williams ◽  
R.C. Beairsto ◽  
R.V. Knoell ◽  
...  
Keyword(s):  
Titanium Nitride ◽  
Semiconductor Device ◽  
Deposition Process ◽  
Argon Atmosphere ◽  
Device Fabrication ◽  
Rutherford Backscattering ◽  
Substrate Bias ◽  
Target Power ◽  
Sputter Deposited ◽  
And Diffusion

Titanium nitride films are incorporated into semiconductor device fabrication to form both contacts and diffusion barriers. These films are often deposited by means of reactive sputtering of a titanium nitride target in an argon atmosphere. During the course of the deposition process, gaseous components may be incorporated into the films resulting in changes in their physical and electrical properties.The stress and resistivity of titanium nitride films have been measured as a function of several processing variables: i) target power, ii) substrate bias, iii) pressure and iv) N2/Ar ratio. The concentration of oxygen, nitrogen and argon and their distribution throughout the films were measured using Rutherford Backscattering Spectroscopy of 2.12MeV helium ions generated in a General Ionex 1.7MV accelerator.

Optimum diameter for laser beam and effect of temperature rise on the optical bistability hysteresis loops

2020 ◽  
Vol 18 (45) ◽  
pp. 32-39
Author(s):  
Ali Hassan Khidhir
Keyword(s):  
Indium Antimonide ◽  
Optical Bistability ◽  
Analytical Study ◽  
Hysteresis Loops ◽  
Optimization Procedure ◽  
Effect Of Temperature ◽  
Main Role ◽  
Switching Power ◽  
Optimum Diameter ◽  
Fabry Perot

 In this research, analytical study for simulating a Fabry-Perot bistable etalon (F-P cavity) filled with a dispersive optimized nonlinear optical material (Kerr type) such as semiconductors Indium Antimonide (InSb). An optimization procedure using reflective (~85%) InSb etalon (~50µm) thick is described. For this etalon with a (50 µm) spot diameter beam, the minimum switching power is (~0.078 mW) and switching time is (~150 ns), leading to a switching energy of (~11.77 pJ) for this device. Also, the main role played by the temperature to change the etalon characteristic from nonlinear to linear dynamics.

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