In situ atomic force microscopy: the case study of graphite immersed in aqueous NaOH electrolyte

2020 ◽  
Vol 135 (3) ◽  
Author(s):  
Gianlorenzo Bussetti ◽  
Marcello Campione ◽  
Alberto Bossi ◽  
Claudio Goletti ◽  
Lamberto Duò ◽  
...  
2018 ◽  
Author(s):  
Lucile C. Teague Sheridan ◽  
Tanya Schaeffer ◽  
Yuting Wei ◽  
Satish Kodali ◽  
Chong Khiam Oh

Abstract It is widely acknowledged that Atomic force microscopy (AFM) methods such as conductive probe AFM (CAFM) and Scanning Capacitance Microscopy (SCM) are valuable tools for semiconductor failure analysis. One of the main advantages of these techniques is the ability to provide localized, die-level fault isolation over an area of several microns much faster than conventional nanoprobing methods. SCM, has advantages over CAFM in that it is not limited to bulk technologies and can be utilized for fault isolation on SOI-based technologies. Herein, we present a case-study of SCM die-level fault isolation on SOI-based FinFET technology at the 14nm node.


1999 ◽  
Vol 353 (1-2) ◽  
pp. 194-200 ◽  
Author(s):  
C. Coupeau ◽  
J.F. Naud ◽  
F. Cleymand ◽  
P. Goudeau ◽  
J. Grilhé

2001 ◽  
Vol 167 (1) ◽  
pp. 139-151 ◽  
Author(s):  
Connie J. Rossini ◽  
Justinn F. Arceo ◽  
Evan R. McCarney ◽  
Brian H. Augustine ◽  
Douglas E. Dennis ◽  
...  

1992 ◽  
Author(s):  
Mark R. Kozlowski ◽  
Michael C. Staggs ◽  
Mehdi Balooch ◽  
Robert J. Tench ◽  
Wigbert J. Siekhaus

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