"IN SITU" AUGER ELECTRON SPECTROSCOPY APPLIED TO STUDY THE CHANGE OF SURFACE OF TiNi ALLOY IN NITROGEN ATMOSPHERE AT LOW PRESSURE AND AT ROOM TEMPERATURE

2001 ◽  
Author(s):  
E. Rówiński ◽  
E. Łągiewka
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Low Pressure ◽  
Nitrogen Atmosphere ◽  
Tini Alloy

Study of Ta as a Diffusion Barrier in Cu/SiO2 Structure

2000 ◽  
Vol 612 ◽  
Author(s):  
J. S. Pan ◽  
A. T. S. Wee ◽  
C. H. A. Huan ◽  
J. W. Chai ◽  
J. H. Zhang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Depth Profiling ◽  
Oxide Formation ◽  
X Ray ◽  
Chemical States ◽  
The Stability

AbstractTantalum (Ta) thin films of 35 nm thickness were investigated as diffusion barriers as well as adhesion-promoting layers between Cu and SiO2 using X-ray diffractometry (XRD), Scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). After annealing at 600°C for 1h in vacuum, no evidence of interdiffusion was observed. However, XPS depth profiling indicates that elemental Si appears at the Ta/SiO2 interface after annealing. In-situ XPS studies show that the Ta/SiO2 interface was stable until 500°C, but about 32% of the interfacial SiO2 was reduced to elemental Si at 600°C. Upon cooling to room temperature, some elemental Si recombined to form SiO2 again, leaving only 6.5% elemental Si. Comparative studies on the interface chemical states of Cu/SiO2 and Ta/SiO2 indicate that the stability of the Cu/Ta/SiO2/Si system may be ascribed to the strong bonding of Ta and SiO2, due to the reduction of SiO2 through Ta oxide formation.

A RHEED study of Cu3Au (110) surface

1992 ◽  
Vol 50 (2) ◽  
pp. 1460-1461
Author(s):  
Yi Huang ◽  
John M. Cowley
Keyword(s):  
Electron Diffraction ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
High Energy ◽  
High Energy Electron ◽  
Ion Scattering ◽  
Long Period ◽  
The Ideal

In recent years the Cu3Au (110) surface has been studied by many authors to reveal its ordering structure and order-disorder transition phenomena. A 2×1 structure which corresponds to an ideal truncation of the ordered bulk crystal and a 4×1 reconstructed structure have been observed. Using ion scattering methods, McRae et al have determined the Au fractions in the first and the second layer at room temperature, which deviate from the ideal bulk value and indicate the segregation of Au to the surface. But the question how the atoms are rearranged in the 4×1 structure and why some of the Au stays in the second layer have not been answered. Another important question about Cu3Au (110) surface is whether the long period ordering structure (LPS) exists on the surface. In present work the Cu3Au (precise composition Cu71.7Au28.3) (110) surface is studied with Auger electron Spectroscopy (AES) and Reflection High Energy Electron Diffraction (RHEED) which have not been used to study the Cu3Au surface before.

Sign in / Sign up

Export Citation Format

Share Document