VERTICAL CAVITY SURFACE EMITTING LASER ARRAYS FOR WAVELENGTH DIVISION MULTIPLEXING APPLICATIONS

1995 ◽  
pp. 41-64
Author(s):  
C. J. CHANG-HASNAIN ◽  
Y. A. WU ◽  
L. E. ENG ◽  
G. S. LI
Keyword(s):  
Wavelength Division Multiplexing ◽  
Cavity Surface ◽  
Laser Arrays ◽  
Wavelength Division ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

III-V-on-Si Photonic Crystal Vertical-Cavity Surface-Emitting Laser Arrays for Wavelength Division Multiplexing

2013 ◽  
Vol 25 (12) ◽  
pp. 1111-1113 ◽  
Author(s):  
Corrado Sciancalepore ◽  
Badhise Ben Bakir ◽  
Sylvie Menezo ◽  
Xavier Letartre ◽  
Damien Bordel ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Wavelength Division Multiplexing ◽  
Cavity Surface ◽  
Laser Arrays ◽  
Wavelength Division ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

VERTICAL CAVITY SURFACE EMITTING LASER ARRAYS FOR WAVELENGTH DIVISION MULTIPLEXING APPLICATIONS

1994 ◽  
Vol 05 (04) ◽  
pp. 569-592
Author(s):  
C.J. CHANG-HASNAIN ◽  
Y.A. WU ◽  
L.E. ENG ◽  
G.S. LI
Keyword(s):  
Wavelength Division Multiplexing ◽  
Single Mode ◽  
Semiconductor Diode ◽  
Cavity Surface ◽  
Laser Arrays ◽  
Wavelength Division ◽  
Multiple Wavelength ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

The capability to fabricate two-dimensional (2D) semiconductor diode laser array is one of the most important steps towards making wafer-scale low-cost lasers. The recent emergence of vertical cavity surface emitting laser (VCSEL) facilitates the fabrication of such large 2D arrays. In this paper, we review the recent progress on a novel largeaperture single-mode VCSEL and a 2D multiple-wavelength VCSEL array for ultra-high bandwidth applications. We demonstrate a passive antiguide region (PAR) VCSEL which emits a stable single mode with very low threshold, a large aperture, and a fixed polarization. We also demonstrate multi-wavelength VCSEL arrays with repeatable wavelength spans over 20 nm, grown by Molecular Beam Epitaxy. The wavelength shift is achieved by varying the GaAs growth rate across the wafer using a patterned backing wafer to induce a temperature profile. Such multiple wavelength laser arrays are promising for ultrahigh bandwidth optical transmission and switching systems using wavelength division multiplexing (WDM).

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