FABRICATION OF ZnO NANORODS BY ELECTROCHEMICAL DEPOSITION PROCESS AND ITS PHOTOVOLTAIC PROPERTIES

Solar cells with ZnO film/ZnO nanorods (NRs)/PbS quantum dot (QD) photoelectrodes were constructed and various properties were studied. The ZnO NRs were grown for different periods varying from 0 (ZnO film) to 30 min (ZnO NR30) and the effect of growth period on the photovoltaic properties was investigated. The cell with ZnO film/PbS QD as photoelectrode showed the open circuit voltage VOC of 0.59 V, short circuit current density JSC of 10.06 mAcm−2, and the power conversion efficiency of 3.29% under one sun illumination (air mass 1.5 global illumination at 100 mWcm−2). In a device containing of ZnO film/ZnO NR10/PbS QD (as photoelectrode), mentioned photovoltaic parameters increased to 0.61 V, 10.47 mAcm−2 and 3.81%, respectively.

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Impact of first-step potential and time on the vertical growth of ZnO nanorods on ITO substrate by two-step electrochemical deposition

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2013.07.093 ◽

2013 ◽

Vol 579 ◽

pp. 558-563 ◽

Cited By ~ 8

Author(s):

Tae Gyoum Kim ◽

Jin-Tak Jang ◽

Hyukhyun Ryu ◽

Won-Jae Lee

Keyword(s):

Electrochemical Deposition ◽

Zno Nanorods ◽

Step Potential ◽

Vertical Growth

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Fabrication of an Apatite/Collagen Composite Coating on the NiTi Shape Memory Alloy through Electrochemical Deposition and Coating Characterisation

Materials Science Forum ◽

10.4028/www.scientific.net/msf.618-619.319 ◽

2009 ◽

Vol 618-619 ◽

pp. 319-323 ◽

Cited By ~ 5

Author(s):

Parama Chakraborty Banerjee ◽

Tao Sun ◽

Jonathan H.W. Wong ◽

Min Wang

Keyword(s):

Shape Memory Alloy ◽

Shape Memory ◽

Composite Coating ◽

Electrochemical Deposition ◽

Room Temperature ◽

Composite Coatings ◽

Deposition Process ◽

Niti Shape Memory Alloy ◽

X Ray ◽

Niti Sma

To improve the biocompatibility and bioactivity of NiTi shape memory alloy (SMA), apatite/collagen composite coatings were fabricated on the surface of NiTi SMA at room temperature using the electrochemical deposition technique. Spherical apatite particles and fibrous collagen that formed the composite coating were visible under scanning electron microscope (SEM). The Ca/P ratio of the apatite component in the coating, as determined by energy dispersive X-ray spectroscopy (EDX), was about 1.38 which is slightly higher than that of octocalcium phosphate (OCP). X-ray diffraction result showed that the apatite was amorphous, which was due to the low temperature (i.e., room temperature) deposition process. The structure of the composite coatings was further characterized using Fourier transform infrared reflection spectroscopy (FTIR). It was also found that, compared to bare NiTi SMA samples, the wettability of as-deposited samples was increased because of the formation of the composite coating.

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Электрохимическое осаждение контактных материалов в постростовой технологии фотоэлектрических преобразователей

Физика и техника полупроводников ◽

10.21883/ftp.2022.03.52127.9774 ◽

2022 ◽

Vol 56 (3) ◽

pp. 376

Author(s):

А.В. Малевская ◽

Н.Д. Ильинская ◽

Д.А. Малевский ◽

П.В. Покровский

Keyword(s):

Electrochemical Deposition ◽

Ohmic Contacts ◽

Deposition Process ◽

Contact System ◽

Horizontal Position ◽

Deposition Uniformity ◽

Galvanic Deposition

Investigations and modeling of ohmic contacts electrochemical deposition process in postgrowth technology of photovoltaic converters fabrication have been carried out. The technology of Ag/Au contact system galvanic deposition at vertical and horizontal position of heterostructure and anode in the electrolyte has been developed. The increase of contact system deposition uniformity up to ∼ 95% at the thickness of contact bus-bars ∼ 5 µm on the heterostructure area with 4 inch diameter has been archived.

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Morphology and I-V Characteristics of Electrochemically Deposited Zinc Oxide on Silicon

ELEKTRIKA- Journal of Electrical Engineering ◽

10.11113/elektrika.v20n3.307 ◽

2021 ◽

Vol 20 (3) ◽

pp. 32-36

Author(s):

Ahmad Bukhairi Md Rashid ◽

Mastura Shafinaz Zainal Abidin ◽

Shaharin Fadzli Abd Rahman ◽

Amirjan Nawabjan

Keyword(s):

Zinc Oxide ◽

Electrochemical Deposition ◽

Dark Current ◽

Room Temperature ◽

Volume Ratio ◽

Deposition Process ◽

X Ray ◽

Current Voltage ◽

Electrochemically Deposited ◽

A Current

This paper reported on the electrochemical deposition of zinc oxide (ZnO) on p-silicon (p-Si) (100) substrate in the mixture of 0.1 M of zinc chloride (ZnCl2) and potassium chloride (KCl) electrolyte at a volume ratio of 1:1, 3:1 and 5:1 namely Sample A, B and C. The deposition process was done in room temperature with a current density of 10 mA/cm2 for 30 minutes. Prior to the experiment, all samples were treated by RCA cleaning steps. All samples were characterized using scanning electron microscopy (SEM) and energy dispersive X-ray (EDX). The results show that all samples have the same morphology of a flake-like structure with different Zn:O ratio that were 2.81, 2.35 and 2.49 for samples A, B and C. The current-voltage (I-V) characteristic graph was obtained by dark current measurement using Keithley SMU 2400 and the threshold voltage (Vth) values were determined at 2.21 V, 0.85 V and 1.22 V for sample A, B and C respectively which correspond with the Zn:O ratio where the highest value of Zn:O ratio can be found in sample A and the lowest in sample B. Based on these results, it shows that electrochemical deposition technique is capable of being used to deposit the flake-like structure ZnO on semiconductor material to form the p-n junction which behaves like a diode. The value of Vth seems to be depended on the ratio between Zn and O. Higher ratio of Zn and O will cause the higher value of intrinsic carrier concentration and built in potential which will increase the Vth value.

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