Morphology and I-V Characteristics of Electrochemically Deposited Zinc Oxide on Silicon

2021 ◽  
Vol 20 (3) ◽  
pp. 32-36
Author(s):  
Ahmad Bukhairi Md Rashid ◽  
Mastura Shafinaz Zainal Abidin ◽  
Shaharin Fadzli Abd Rahman ◽  
Amirjan Nawabjan
Keyword(s):  
Zinc Oxide ◽  
Electrochemical Deposition ◽  
Dark Current ◽  
Room Temperature ◽  
Volume Ratio ◽  
Deposition Process ◽  
X Ray ◽  
Current Voltage ◽  
Electrochemically Deposited ◽  
A Current

This paper reported on the electrochemical deposition of zinc oxide (ZnO) on p-silicon (p-Si) (100) substrate in the mixture of 0.1 M of zinc chloride (ZnCl2) and potassium chloride (KCl) electrolyte at a volume ratio of 1:1, 3:1 and 5:1 namely Sample A, B and C. The deposition process was done in room temperature with a current density of 10 mA/cm2 for 30 minutes. Prior to the experiment, all samples were treated by RCA cleaning steps. All samples were characterized using scanning electron microscopy (SEM) and energy dispersive X-ray (EDX). The results show that all samples have the same morphology of a flake-like structure with different Zn:O ratio that were 2.81, 2.35 and 2.49 for samples A, B and C. The current-voltage (I-V) characteristic graph was obtained by dark current measurement using Keithley SMU 2400 and the threshold voltage (Vth) values were determined at 2.21 V, 0.85 V and 1.22 V for sample A, B and C respectively which correspond with the Zn:O ratio where the highest value of Zn:O ratio can be found in sample A and the lowest in sample B. Based on these results, it shows that electrochemical deposition technique is capable of being used to deposit the flake-like structure ZnO on semiconductor material to form the p-n junction which behaves like a diode. The value of Vth seems to be depended on the ratio between Zn and O. Higher ratio of Zn and O will cause the higher value of intrinsic carrier concentration and built in potential which will increase the Vth value.

Fabrication of an Apatite/Collagen Composite Coating on the NiTi Shape Memory Alloy through Electrochemical Deposition and Coating Characterisation

2009 ◽  
Vol 618-619 ◽  
pp. 319-323 ◽  
Author(s):  
Parama Chakraborty Banerjee ◽  
Tao Sun ◽  
Jonathan H.W. Wong ◽  
Min Wang
Keyword(s):  
Shape Memory Alloy ◽  
Shape Memory ◽  
Composite Coating ◽  
Electrochemical Deposition ◽  
Room Temperature ◽  
Composite Coatings ◽  
Deposition Process ◽  
Niti Shape Memory Alloy ◽  
X Ray ◽  
Niti Sma

To improve the biocompatibility and bioactivity of NiTi shape memory alloy (SMA), apatite/collagen composite coatings were fabricated on the surface of NiTi SMA at room temperature using the electrochemical deposition technique. Spherical apatite particles and fibrous collagen that formed the composite coating were visible under scanning electron microscope (SEM). The Ca/P ratio of the apatite component in the coating, as determined by energy dispersive X-ray spectroscopy (EDX), was about 1.38 which is slightly higher than that of octocalcium phosphate (OCP). X-ray diffraction result showed that the apatite was amorphous, which was due to the low temperature (i.e., room temperature) deposition process. The structure of the composite coatings was further characterized using Fourier transform infrared reflection spectroscopy (FTIR). It was also found that, compared to bare NiTi SMA samples, the wettability of as-deposited samples was increased because of the formation of the composite coating.

A Study of the Interactions Between Oligoamidephosphate (OAPh) and Curatives in a Sulphenamide-Accelerated Sulphur Vulcanizing System

1999 ◽  
Vol 19 (2) ◽  
pp. 95-108 ◽  
Author(s):  
Todorka G. Vladkova ◽  
Alexander Chr. Alaminov ◽  
Milka G. Pankova
Keyword(s):  
Differential Scanning Calorimetry ◽  
Zinc Oxide ◽  
Ir Spectroscopy ◽  
Room Temperature ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Sulphur Vulcanization

Abstract The possible interactions between oligoamidephosphate (OAPli) and the curatives of a sulphenamide-accelerated sulphur vulcanizing system were studied by differential scanning calorimetry, IR-spectroscopy, and X-ray analysis. The interactions in double mixtures were between OAPh and zinc oxide (ZnO) and OAPh and sulphur. The OAPh/ZnO interaction that starts at room temperature seems to be the key for understanding the peculiarities of sulphenamide-accelerated sulphur vulcanization in the presence of OAPh.

Study on Schottky Diode Characteristics Improving by X-Ray Irradiation

2013 ◽  
Vol 717 ◽  
pp. 113-116
Author(s):  
Sani Klinsanit ◽  
Itsara Srithanachai ◽  
Surada Ueamanapong ◽  
Sunya Khunkhao ◽  
Budsara Nararug ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Diode ◽  
Room Temperature ◽  
The Other ◽  
Low Power Consumption ◽  
Initial Value ◽  
X Ray ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

The effect of soft X-ray irradiation to the Schottky diode properties was analyzed in this paper. The built-in voltage, leakage current, and work function of Schottky diode were investigated. The current-voltage characteristics of the Schottky diode are measured at room temperature. After irradiation at 70 keV for 55 seconds the forward current and leakage current are increase slightly. On the other hand, the built-in voltage is decrease from the initial value about 0.12 V. Consequently, this method can cause the Schottky diode has low power consumption. The results show that soft X-ray can improve the characteristics of Schottky diode.

scholarly journals Production and Electrical Properties of a CuZnAlMn(SMA)/p-Si Diode

2021 ◽  
Author(s):  
EMINE ALDIRMAZ ◽  
M. Güler ◽  
E. Güler
Keyword(s):  
Room Temperature ◽  
Schottky Contact ◽  
Phase Identification ◽  
Frequency Interval ◽  
Electrical Measurements ◽  
X Ray ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Type Semiconductor ◽  
Diode Current

Abstract In this study, the Cu-23.37%Zn-13.73%Al-2.92%Mn (at.%) alloy was used. Phase identification was performed with the Scanning electron microscope (SEM), and energy-dispersive X-ray (EDX). We observed in the austenite phase in Cu-23.37%Zn-13.73%Al-2.92%Mn (at.%) alloy. To produce a new Schottky diode, CuZnAlMn alloy was exploited as a Schottky contact on p-type semiconductor silicon substrate. To calculate the characteristics of the produced diode, current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G-V) analyzes were taken at room temperature (300 K), in the dark and under various lights. Using electrical measurements, the diode's ideality factor (n), barrier height (Φb), and other diode parameters were calculated. Besides, the conductance / capacitance-voltage (G/C-V) characteristics of the diode were studied and in a wide frequency interval at room temperature. Also, the capacitance and conductance values strongly ​​ rely on the frequency. From the present experimental results, the obtained diode can be used for optoelectronic devices.

scholarly journals Effect of epitaxial alignment on electron transport from quasi-two-dimensional iron silicide alpha-FeSi-=SUB=-2-=/SUB=- nanocrystals into p-Si(001)

2018 ◽  
Vol 52 (5) ◽  
pp. 523
Author(s):  
I.A. Tarasov ◽  
M.V. Rautskii ◽  
I.A. Yakovlev ◽  
M.N. Volochaev
Keyword(s):  
Electron Transport ◽  
Room Temperature ◽  
Molecular Beam ◽  
Schottky Barrier Height ◽  
Iron Silicide ◽  
Current Voltage Characteristic ◽  
Current Voltage ◽  
Basic Orientation ◽  
Different Temperatures ◽  
A Current

AbstractSelf-assembled growth of α-FeSi_2 nanocrystal ensembles on gold-activated and gold-free Si(001) surface by molecular beam epitaxy is reported. The microstructure and basic orientation relationship (OR) between the silicide nanocrystals and silicon substrate were analysed. The study reveals that utilisation of the gold as catalyst regulates the preferable OR of the nanocrystals with silicon and their habitus. It is shown that electron transport from α-FeSi2 phase into p-Si(001) can be tuned by the formation of (001)—or (111)—textured α-FeSi2 nanocrystals ensembles. A current-voltage characteristic of the structures with different preferable epitaxial alignment (α-FeSi_2(001)/Si(100) and α-FeSi_2(111)/Si(100)) shows good linearity at room temperature. However, it becomes non-linear at different temperatures for different ORs due to different Schottky barrier height governed by a particular epitaxial alignment of the α-FeSi_2/ p -Si interfaces.

HYBRID NANOMATERIALS FOR MULTI-SPECTRAL INFRARED PHOTODETECTION

2007 ◽  
Vol 17 (01) ◽  
pp. 165-172 ◽  
Author(s):  
ADRIENNE D. STIFF-ROBERTS
Keyword(s):  
Dark Current ◽  
Room Temperature ◽  
Spectral Response ◽  
Substrate Material ◽  
Hybrid Nanomaterials ◽  
Thermally Activated ◽  
Dopant Incorporation ◽  
Quantum Dot Infrared Photodetectors ◽  
Current Voltage ◽  
Fourier Transform Ir

Quantum dot infrared photodetectors (QDIPs) using quantum dots (QDs) grown by strained-layer epitaxy have demonstrated low dark current, multi-spectral response, high operating temperature, and infrared (IR) imaging. However, achieving near room-temperature, multi-spectral operation is a challenge due to randomness in QD properties. The ability to control dopant incorporation is important since charge carrier occupation influences dark current and IR spectral response. In this work, dopant incorporation is investigated in two classes of QDs; epitaxial InAs/GaAs QDs and CdSe colloidal QDs (CQDs) embedded in MEH-PPV conducting polymers. The long-term goal of this work is to combine these hybrid nanomaterials in a single device heterostructure to enable multi-spectral IR photodetection. Two important results towards this goal are discussed. First, by temperature-dependent dark current-voltage and polarization-dependent Fourier transform IR spectroscopy measurements in InAs/GaAs QDIPs featuring different doping schemes, we have provided experimental evidence for the important contribution of thermally-activated, defect-assisted, sequential resonant tunneling. Second, the enhanced quantum confinement and electron localization in the conduction band of CdSe / MEH-PPV nanocomposites enable intraband transitions in the mid-IR at room temperature. Further, by controlling the semiconductor substrate material, doping type, and doping level on which these nanocomposites are deposited, the intraband IR response can be tuned.

Preparation and Electrochemical Performance of Mn3O4/GR Composites Electrode Material in Supercapacitors

2019 ◽  
Vol 807 ◽  
pp. 50-56
Author(s):  
Yun Long Zhou ◽  
Zhi Biao Hu ◽  
Li Mei Wu ◽  
Jiao Hao Wu
Keyword(s):  
Room Temperature ◽  
Raw Materials ◽  
Precipitation Method ◽  
Electrochemical Performances ◽  
Manganese Sulfate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Co Precipitation ◽  
A Current ◽  
Discharge Test

Using hydrated manganese sulfate and general type graphene (GR) as raw materials, Mn3O4/GR composite has been successfully prepared by the liquid phase chemical co-precipitation method at room temperature. X-ray diffraction (XRD) was used to investigate the phase structure of Mn3O4powder and Mn3O4/GR composite; The electrochemical performances of the samples were elucidated by cyclic voltammetry and galvanostatic charge-discharge test in 0.5 mol/L Na2SO4electrolyte. The results show that the Mn3O4/GR composite possesses graphene phase and good reversibility; the composite also displays a specific capacitance of 318.8 F/g at a current density of 1 A/g.

High Quality Hydrothermal ZnO Crystals

1998 ◽  
Vol 537 ◽  
Author(s):  
M. Suscavage ◽  
M. Harris ◽  
D. Bliss ◽  
P. Yip ◽  
S.-Q. Wang ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Liquid Helium ◽  
Room Temperature ◽  
Surface Preparation ◽  
Critical Factor ◽  
High Quality ◽  
Rocking Curve ◽  
X Ray ◽  
Oxide Crystals

AbstractZinc Oxide crystals have historically been grown in hydrothermal autoclaves with a basic mineralizer; however, doubts have been raised about the quality of such crystals because they have often exhibited large x-ray rocking curve widths and low photoluminescence (PL) yield with large linewidths. Several ZnO crystals were grown hydrothermally and sliced parallel to the c-plane. This resulted in opposite surfaces (the C+ and C-) exhibiting pronounced chemical and mechanical differences. Different surface treatments were investigated and compared by PL both at room temperature and liquid helium temperatures, and by double axis X-ray rocking curve measurements. The high quality of hydrothermally-grown ZnO is substantiated by the narrow rocking curve widths and sharp PL peaks obtained. A critical factor in obtaining these results was found to be surface preparation.

Electronics for SPring-8 X-ray beam monitors

1998 ◽  
Vol 5 (3) ◽  
pp. 630-631 ◽  
Author(s):  
Togo Kudo ◽  
Hideki Aoyagi ◽  
Hideaki Shiwaku ◽  
Yoshiharu Sakurai ◽  
Hideo Kitamura
Keyword(s):  
Processing System ◽  
Measuring System ◽  
Signal Processing System ◽  
Beam Position ◽  
X Ray ◽  
Current Voltage ◽  
Highly Sensitive ◽  
Position Data ◽  
Current Measuring ◽  
A Current

A sensitive current-measuring system is required to construct a highly sensitive X-ray beam-position monitor (XBPM). A current–voltage converter (I/V) which can measure currents between 0.1 nA and 10 mA was designed, and the signal processing system of the XBPM was constucted using this I/V. This system was used in beamline commissioning. Beam-position data standard deviations of σ ≃ 3 µm for the bending-magnet beamline, and σ x ≃ 3 µm and σ y ≃ 1 µm for the insertion-device beamline were obtained during the beamline commissioning.

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