scholarly journals Электрохимическое осаждение контактных материалов в постростовой технологии фотоэлектрических преобразователей

2022 ◽  
Vol 56 (3) ◽  
pp. 376
Author(s):  
А.В. Малевская ◽  
Н.Д. Ильинская ◽  
Д.А. Малевский ◽  
П.В. Покровский
Keyword(s):  
Electrochemical Deposition ◽  
Ohmic Contacts ◽  
Deposition Process ◽  
Contact System ◽  
Horizontal Position ◽  
Deposition Uniformity ◽  
Galvanic Deposition

Investigations and modeling of ohmic contacts electrochemical deposition process in postgrowth technology of photovoltaic converters fabrication have been carried out. The technology of Ag/Au contact system galvanic deposition at vertical and horizontal position of heterostructure and anode in the electrolyte has been developed. The increase of contact system deposition uniformity up to ∼ 95% at the thickness of contact bus-bars ∼ 5 µm on the heterostructure area with 4 inch diameter has been archived.

Analysis of Electrochemical Deposition Process of Permalloy Films

2019 ◽  
Vol 24 (6) ◽  
pp. 547-556
Author(s):  
R.D. Tikhonov ◽  
◽  
S.A. Polomoshnov ◽  
V.V. Amelichev ◽  
D.V. Kostuk ◽  
...  
Keyword(s):  
Electrochemical Deposition ◽  
Deposition Process

Fabrication of an Apatite/Collagen Composite Coating on the NiTi Shape Memory Alloy through Electrochemical Deposition and Coating Characterisation

2009 ◽  
Vol 618-619 ◽  
pp. 319-323 ◽  
Author(s):  
Parama Chakraborty Banerjee ◽  
Tao Sun ◽  
Jonathan H.W. Wong ◽  
Min Wang
Keyword(s):  
Shape Memory Alloy ◽  
Shape Memory ◽  
Composite Coating ◽  
Electrochemical Deposition ◽  
Room Temperature ◽  
Composite Coatings ◽  
Deposition Process ◽  
Niti Shape Memory Alloy ◽  
X Ray ◽  
Niti Sma

To improve the biocompatibility and bioactivity of NiTi shape memory alloy (SMA), apatite/collagen composite coatings were fabricated on the surface of NiTi SMA at room temperature using the electrochemical deposition technique. Spherical apatite particles and fibrous collagen that formed the composite coating were visible under scanning electron microscope (SEM). The Ca/P ratio of the apatite component in the coating, as determined by energy dispersive X-ray spectroscopy (EDX), was about 1.38 which is slightly higher than that of octocalcium phosphate (OCP). X-ray diffraction result showed that the apatite was amorphous, which was due to the low temperature (i.e., room temperature) deposition process. The structure of the composite coatings was further characterized using Fourier transform infrared reflection spectroscopy (FTIR). It was also found that, compared to bare NiTi SMA samples, the wettability of as-deposited samples was increased because of the formation of the composite coating.

Morphology and I-V Characteristics of Electrochemically Deposited Zinc Oxide on Silicon

2021 ◽  
Vol 20 (3) ◽  
pp. 32-36
Author(s):  
Ahmad Bukhairi Md Rashid ◽  
Mastura Shafinaz Zainal Abidin ◽  
Shaharin Fadzli Abd Rahman ◽  
Amirjan Nawabjan
Keyword(s):  
Zinc Oxide ◽  
Electrochemical Deposition ◽  
Dark Current ◽  
Room Temperature ◽  
Volume Ratio ◽  
Deposition Process ◽  
X Ray ◽  
Current Voltage ◽  
Electrochemically Deposited ◽  
A Current

This paper reported on the electrochemical deposition of zinc oxide (ZnO) on p-silicon (p-Si) (100) substrate in the mixture of 0.1 M of zinc chloride (ZnCl2) and potassium chloride (KCl) electrolyte at a volume ratio of 1:1, 3:1 and 5:1 namely Sample A, B and C. The deposition process was done in room temperature with a current density of 10 mA/cm2 for 30 minutes. Prior to the experiment, all samples were treated by RCA cleaning steps. All samples were characterized using scanning electron microscopy (SEM) and energy dispersive X-ray (EDX). The results show that all samples have the same morphology of a flake-like structure with different Zn:O ratio that were 2.81, 2.35 and 2.49 for samples A, B and C. The current-voltage (I-V) characteristic graph was obtained by dark current measurement using Keithley SMU 2400 and the threshold voltage (Vth) values were determined at 2.21 V, 0.85 V and 1.22 V for sample A, B and C respectively which correspond with the Zn:O ratio where the highest value of Zn:O ratio can be found in sample A and the lowest in sample B. Based on these results, it shows that electrochemical deposition technique is capable of being used to deposit the flake-like structure ZnO on semiconductor material to form the p-n junction which behaves like a diode. The value of Vth seems to be depended on the ratio between Zn and O. Higher ratio of Zn and O will cause the higher value of intrinsic carrier concentration and built in potential which will increase the Vth value.

The Relationship Between Microstructure and Contact Resistance in NiAuGe/ZrB2/Au Ohmic Contacts to GaAs.

1990 ◽  
Vol 181 ◽  
Author(s):  
M. P. Grimshaw ◽  
A. E. Staton-Bevan ◽  
J. Herniman ◽  
D. A. Allan
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Gaas Layer ◽  
Contact System ◽  
Initial Contact ◽  
The Relationship ◽  
Resistance Data

ABSTRACTThe microstructure and contact resistance of NiAuGe contacts to n-type GaAs were determined as a function of initial contact composition. The contact microstructures were found to contain varying amounts of of α, α’ and β (or Au7Ga2) Au-Ga, epitaxial Ge, NiGe and NiGeAs phases. A previously unidentified NiAsx (Zr,B) phase was also observed. The contact resistance was found to vary between 0.22-0.38±0.03Ωmm. Comparison of the microstructural and contact resistance data revealed that the ohmic formation models based on (i) the formation of a recrystallised n+ GaAs layer and (ii) the presence of a graded Ge/GaAs heterojunction were not applicable to this contact system.

Structural Processes in Gold-Based Metallization During the Formation of Ohmic Contacts to GaSb

1995 ◽  
Vol 403 ◽  
Author(s):  
A. Piotrowska ◽  
E. Kańifiska ◽  
M. Guziewicz ◽  
E. Mizera ◽  
E. Dynowska ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Contact System ◽  
Contact Reaction ◽  
Annealing Behavior ◽  
Thermally Activated ◽  
Combined Use ◽  
Semiconductor System ◽  
Thermal Stability Of

AbstractAnnealing behavior of Au, AuZn, and AuSb metallization on GaSb have been investigated by the combined use of RBS, XRD, TEM, and I-V characterization. The results give evidence that the thermally activated contact reaction strongly depends on the particular elements incorporated in the Au layer. Pure Au reacts with GaSb at 100°C. The addition of Zn to Au metallization increases the thermal stability of the metallization/semiconductor system to 200°C. Antimony, forming with gold the AuSb2 phase in metallization, provides the most stable ohmic contact system.

Characterizations of ZnS/CuInS2 Film Fabricated by Electrochemical Deposition Process for Solar Cell Devices

2012 ◽  
Vol 15 (2) ◽  
pp. 103-106 ◽  
Author(s):  
Yih-Min Yeh ◽  
Hsiang Chen ◽  
Chuan Hao Liao ◽  
Ching Bang Chen ◽  
Bin Yi Chen
Keyword(s):  
Electrochemical Deposition ◽  
Low Cost ◽  
Deposition Process ◽  
Thin Film Solar Cells ◽  
Constant Current ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sulfur Atmosphere ◽  
Surface Morphologies ◽  
Zns Films

In this study, CuInS2 (CIS) films were fabricated by a two-step, non-vacuum process. Electrochemical deposition (ECD) was first used to prepare Cu-In precursors on Mo substrate under constant current. Then, CuInS2 films were prepared by sulfurization of the Cu-In precursors in sulfur atmosphere. The surface morphologies, compositions, and transmittance of the CuInS2 and ZnS films were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive spectroscopy (EDS), and UV-VIS, respectively. The results show that a high-quality CIS thin film solar cells by low-cost, non-vacuum process could be obtained.

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