NOISE AND THZ RECTIFICATION CHARACTERISTICS OF ZERO-BIAS QUANTUM TUNNELING SB-HETEROSTRUCTURE DIODES

2004 ◽  
Vol 14 (03) ◽  
pp. 664-669 ◽  
Author(s):  
ARTTU LUUKANEN ◽  
ERICH N. GROSSMAN ◽  
HARRIS P. MOYER ◽  
JOEL N. SCHULMAN
Keyword(s):  
Quantum Tunneling ◽  
Room Temperature ◽  
Direct Detection ◽  
Intrinsic Noise ◽  
Johnson Noise ◽  
Zero Bias ◽  
Submillimeter Wavelength ◽  
Noise Characteristics ◽  
Tunneling Diode ◽  
Noise Measurements

The Sb -heterostructure quantum tunneling diode, fabricated from epitaxial layers of InAs and AlGaSb , is a recently proposed device for direct detection and mixing in the submillimeter wavelength range. These diodes exhibit especially high curvature in the current-voltage characteristic that produces the rectification or mixing without bias. Operation without bias is a highly desirable feature as the device does not suffer from large 1/f noise, a major shortcoming in other devices such as Schottky barrier diodes or resistive room temperature bolometers. In this paper we present the noise characteristics of the diode as a function of the bias voltage. At room temperature and zero bias, the device demonstrates a Johnson noise limited intrinsic noise equivalent power of 1 pW/Hz1/2. In addition to the noise measurements, we present the detection characteristics of the diode at a frequency of 2.5 THz. The measured THz laser response deviates from conventional theoretical prediction based on pure rectification. The reasons for the discrepancy will be discussed.

scholarly journals Generation Recombination Noise in GaN Photoconducting Detectors

1999 ◽  
Vol 4 (S1) ◽  
pp. 817-822
Author(s):  
M. Misra ◽  
D. Doppalapudi ◽  
A.V. Sampath ◽  
T.D. Moustakas ◽  
P.H. McDonald
Keyword(s):  
Room Temperature ◽  
Low Frequency ◽  
Optical Excitation ◽  
Noise Spectrum ◽  
High Resistivity ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characteristics ◽  
Deep Traps ◽  
Noise Measurements

Low frequency noise measurements are a powerful tool for detecting deep traps in semiconductor devices and investigating trapping-recombination mechanisms. We have performed low frequency noise measurements on a number of photoconducting detectors fabricated on autodoped n-GaN films grown by ECR-MBE. At room temperature, the noise spectrum is dominated by 1/f noise and thermal noise for low resistivity material and by generationrecombination (G-R) noise for high resistivity material. Noise characteristics were measured as a function of temperature in the 80K to 300K range. At temperatures below 150K, 1/f noise is dominant and at temperatures above 150K, G-R noise is dominant. Optical excitation revealed the presence of traps not observed in the dark, at room temperature.

Generation Recombination Noise in GaN Photoconducting Detectors

1998 ◽  
Vol 537 ◽  
Author(s):  
M. Misra ◽  
D. Doppalapudi ◽  
A.V. Sampath ◽  
T.D. Moustakas ◽  
P.H. McDonald
Keyword(s):  
Room Temperature ◽  
Low Frequency ◽  
Optical Excitation ◽  
Noise Spectrum ◽  
High Resistivity ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characteristics ◽  
Deep Traps ◽  
Noise Measurements

AbstractLow frequency noise measurements are a powerful tool for detecting deep traps in semiconductor devices and investigating trapping-recombination mechanisms. We have performed low frequency noise measurements on a number of photoconducting detectors fabricated on autodoped n-GaN films grown by ECR-MBE. At room temperature, the noise spectrum is dominated by 1/f noise and thermal noise for low resistivity material and by generation-recombination (G-R) noise for high resistivity material. Noise characteristics were measured as a function of temperature in the 80K to 300K range. At temperatures below 150K, 1/f noise is dominant and at temperatures above 150K, G-R noise is dominant. Optical excitation revealed the presence of traps not observed in the dark, at room temperature.

Impurity and Stoichiometry Control in Atomic Layer Epitaxy

1992 ◽  
Vol 262 ◽  
Author(s):  
H. Yokoyama ◽  
K. Ikuta ◽  
N. Inoue
Keyword(s):  
Point Defects ◽  
Resonant Tunneling ◽  
Room Temperature ◽  
Defect Density ◽  
Atomic Layer ◽  
Negative Resistance ◽  
Atomic Layer Epitaxy ◽  
Tunneling Diode ◽  
Order Of Magnitude ◽  
Stoichiometry Control

ABSTRACTWe investigate the intrinsic point defects in epilayers grown by atomic layer epitaxy (ALE). Ga vacancies and antisite As atoms in the epilayers are detected by photoluminescence spectroscopy. This shows that the ALE epilayer was grown under As-rich conditions. We propose increasing the TMG flux to reduce the number of point defects. With this method, the number of point defects in ALE epilayers can be decreased to less than that in conventionally grown epilayers. Moreover, it is'found that these point defects are formed by the incomplete Ga coverage, not by the steric hindrance as previously suggested. The carbon concentration is decreased by one order of magnitude by using nitrogen instead of hydrogen as the carrier gas. As an application of this low defect density, we fabricated a GaAs/AlAs resonant tunneling diode and observed the negative resistance at room temperature.

Noise Issues of Concrete-Pavement Texturing

2000 ◽  
Vol 1702 (1) ◽  
pp. 69-79 ◽  
Author(s):  
John R. Jaeckel ◽  
David A. Kuemmel ◽  
Yosef Z. Becker ◽  
Alex Satanovsky ◽  
Ronald C. Sonntag
Keyword(s):  
Second Phase ◽  
Department Of Transportation ◽  
Portland Cement Concrete ◽  
Noise Levels ◽  
The Road ◽  
Wisconsin Department ◽  
Noise Characteristics ◽  
Texture Parameters ◽  
Noise Measurements ◽  
Using Data

The second phase of a project researching the texture and noise characteristics of portland cement concrete (PCC) pavements was sponsored by the Wisconsin Department of Transportation and FHWA. The team of Marquette University and HNTB Corporation measured and analyzed the noise and texture parameters of 57 test sites in Colorado, Iowa, Michigan, Minnesota, North Dakota, and Wisconsin. Conclusions pertaining to tire-and-pavement noise were drawn using data from several types of acoustical tests, including objective noise measurements (exterior and interior), subjective noise evaluations, and a prominent frequency analysis. Texture parameters of all test sites were measured with the road surface analyzer (ROSAN). ROSAN texture measurements proved invaluable in analyzing why different textures exhibited different noise characteristics. Both uniform and random transverse tining provide higher interior and exterior noise levels than skewed or longitudinal tining. Transverse tining, even in some random-spaced textures, can cause a discrete frequency or whine. As the depth and width of tining increased, so did the noise levels. Randomly spaced patterns are sensitive to spacing. Ground PCC pavement exhibited no discrete frequencies. Recommendations include the need for better quality control over tining and a wet-pavement-accident study of longitudinal tining. If noise considerations are paramount, longitudinal tining is recommended. If texture is paramount, skewed tining is recommended. If a skew is not possible, then carefully constructed random transverse is recommended.

Sign in / Sign up

Export Citation Format

Share Document