High Speed 1.55 μm Lasers for Fiber Optic Transmission

1997 ◽  
Vol 08 (03) ◽  
pp. 457-474
Author(s):  
Paul A. Morton

This paper describes the essential elements for creating a practical wide bandwidth directly modulated laser source. This includes considerations of the intrinsic limitations of the laser structure, due to the resonant frequency and damping of the laser output, together with carrier transport issues to allow carriers in the device active region to be efficiently modulated at high speeds. The use of a P-doped compressively strained multiple-quantum well active region to provide high intrinsic speed and remove transport limitations is described, together with record setting results of 25 GHz modulation bandwidth for a 1.55 μm Fabry–Perot laser and 26 GHz bandwidth for a 1.55 μm DFB laser. The challenges of providing high bandwidth electrical connections to the laser on a suitable submount, together with fiber attachment and microwave packaging are discussed. Results of fully packaged 1.55 μm DFB laser with 25 GHz modulation bandwidth are shown. Digital modulation of the packaged 1.55 μm DFB including impedance matching is described, and the transient wavelength chirp is presented. This low chirp is reduced further using an optical filter, to provide a 10 GBit/s source that can transmit error free over 38.5 km of standard optical fiber.

1997 ◽  
Vol 08 (03) ◽  
pp. 475-494 ◽  
Author(s):  
Toshihiko Makino

The high speed performance of partly gain-coupled (GC) DFB lasers consisting of periodically etched strained-layer quantum wells (QW's) is reviewed with comparisons to the equivalent index-coupled (IC) DFB lasers with the same active layers. It is shown that the GC DFB laser has a –3 dB modulation bandwidth of 22 GHz at 10 mW with a stable single mode oscillation at the longer side of the Bragg Stop-band due to in-phase gain coupling. A theoretical analysis is also presented based on the local-normal-mode transfer-matrix laser model which takes into account both the longitudinal distribution of laser parameters and carrier transport effects. The mechanism for high modulation bandwidth of the GC DFB laser is attributed to a higher differential gain due to a reduced carrier transport time which is provided by an effecient carrier injection from the longitudinal etched interface of the QW's.


1992 ◽  
Vol 4 (1) ◽  
pp. 16-18 ◽  
Author(s):  
K. Wakita ◽  
I. Kotaka ◽  
H. Asai ◽  
M. Okamoto ◽  
Y. Kondo ◽  
...  

2014 ◽  
Vol 4 (6) ◽  
pp. 1518-1525 ◽  
Author(s):  
Kasidit Toprasertpong ◽  
Naofumi Kasamatsu ◽  
Hiromasa Fujii ◽  
Tomoyuki Kada ◽  
Shigeo Asahi ◽  
...  

1997 ◽  
Vol 3 (2) ◽  
pp. 315-319 ◽  
Author(s):  
N. Tessler ◽  
S. Marcinkevicius ◽  
U. Olin ◽  
C.K.V. Silfvenius ◽  
B.F. Stalnacke ◽  
...  

1991 ◽  
Vol 59 (23) ◽  
pp. 3009-3011 ◽  
Author(s):  
D. C. Hutchings ◽  
C. B. Park ◽  
A. Miller

1996 ◽  
Vol 450 ◽  
Author(s):  
M. Razeghi ◽  
J. Diaz ◽  
H. J. Yi ◽  
D. Wu ◽  
B. Lane ◽  
...  

ABSTRACTWe report metalorganic chemical vapor deposition-grown double heterostructure and multiple quantum well InAsSb/InAsSbP laser diodes emitting at 3 to 4 μm and light emitting diodes up to 5 μm. Maximum output power up to 1 W (from two facets) with differential efficiency above 70 % up to 150 K was obtained from a MQW laser with stripe width of 100 μm and cavity length of 700 μm for emitting wavelength of 3.6 μm at 90 K. Maximum operating temperature up to 220 K with threshold current density of 40 A/cm2 at 78 K were achieved from the double-heterostructure lasers emitting at 3.2 μm. The far-field beam divergence as narrow as 24° was achieved with the use of higher energy gap barrier layers, i.e., lower effective refractive index, in MQW active region. We also discuss the effect of composition-fluctuation in the InAsSb active region on the gain and threshold current of the lasers.


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