scholarly journals Hall conductivity of strained ℤ 2 crystals

Author(s):  
I. V. Fialkovsky ◽  
M. A. Zubkov

We establish topological nature of Hall conductivity of graphene and other [Formula: see text] crystals in 2D and 3D in the presence of inhomogeneous perturbations. To this end the lattice Weyl–Wigner formalism is employed. The nonuniform mechanical stress is considered, along with the spatially varying magnetic field. The relation of the obtained topological invariant to level counting is clarified.

1993 ◽  
Vol 07 (19) ◽  
pp. 3415-3421 ◽  
Author(s):  
ALEXANDRE S. ROZHAVSKY

A field description of spin-density-wave (SDW) in a quasi-two-dimensional metal with open Fermi surface in magnetic field, is proposed. The SDW transition temperature, T c (H), and the Hall conductivity σxy, are calculated. The dependence T c (H) is found to be different from that of the Bardeen-Cooper-Schrieffer model, in particular, a threshold field, H c , found its natural explanation. It is proved that the quantized Hall conductivity arises from the chiral anomaly terms in the effective action provided there is pinning of chemical potential in the gap of extended states.


2014 ◽  
Vol 104 (12) ◽  
pp. 121912 ◽  
Author(s):  
Y. Luo ◽  
H. X. Peng ◽  
F. X. Qin ◽  
B. J. P. Adohi ◽  
C. Brosseau

Atomic Energy ◽  
1960 ◽  
Vol 6 (6) ◽  
pp. 486-487
Author(s):  
D. P. Vasilevskaya ◽  
A. A. Glazov ◽  
V. I. Danilov ◽  
Yu. N. Denisov ◽  
V. P. Zhelepov ◽  
...  

2016 ◽  
Vol 17 (1) ◽  
pp. 43-47 ◽  
Author(s):  
G.P. Gaidar

On the crystalsof compensatedp‑Ge (with the compensation factor of k = NSb/NGa = 0.5) the transverse (Н ^ (J // X)) magnetoresistance (within the magnetic fields of 0 < Н £ 22.3 kOe) at fixed values of the mechanical stresses Хі = 0; 0.2; 0.4; 0.6; 0.9; 1.1; 1.5 GPa were measured at 77 K. These mechanical stresses X created the elastic deformation along the samples, the crystallographic orientation of which coincided with the direction of [100]. Also at fixed magnetic field intensities Ні = 2; 4; 8; 10; 15; 20; 22.3 kOe the dependencies of resistivity  on the mechanical stress X, which coincides with the longitudinal axis of the crystal (X // J // [100]) and changes in the range of 0 £ Х £ 1.5 GPa, were measured. Last dependences characterized by the presence of a minimum in the range of X ~ 0.5 ¸ 0.6 GPa at the minimal magnetic field intensities Н = 2 kOe, which was shifted to the values of X ~ 0.2 ¸ 0.3 GPa with increasing Н up to 22.3 kOe.


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