THE REALIZATION OF TERAHERTZ BAND-GAP FROM InAs/GaSb TYPE II SUPERLATTICES

2011 ◽  
Vol 25 (07) ◽  
pp. 1021-1028
Author(s):  
L. L. LI ◽  
H. M. DONG ◽  
W. XU ◽  
Y. L. SHI
Keyword(s):  
Optical Absorption ◽  
Band Gap ◽  
High Temperatures ◽  
Heavy Hole ◽  
Type Ii ◽  
Fundamental Band ◽  
Typical Sample ◽  
Gasb Layer ◽  
Terahertz Band ◽  
Type Ii Superlattices

We demonstrate theoretically that terahertz (THz) fundamental band-gap between the electron mini-band in the InAs layer and the heavy-hole mini-band in the GaSb layer can be realized in InAs/GaSb -based type II superlattices (SLs). The THz band-gap can be tuned by varying the widths of the InAs/GaSb layers. The presence of such band-gap can result in a strong cut-off on optical absorption at THz frequencies. For typical sample structures, the THz cut-off of the optical absorption depends sensitively on temperature and a sharper cut-off can be observed at relatively high temperatures. This study is pertinent to the application of InAs/GaSb type II SLs as THz photodetectors.

AlSb and InAs-GaSb layer thickness effect on HH-LH splitting and band gap energies in InAs/AlSb/GaSb type-II superlattices

2015 ◽  
Vol 23 (1) ◽  
Author(s):  
M.M. Alyoruk ◽  
Y. Ergun ◽  
M. Hostut
Keyword(s):  
Band Gap ◽  
Layer Thickness ◽  
Heavy Hole ◽  
Auger Recombination ◽  
Light Hole ◽  
Recombination Process ◽  
Thickness Effect ◽  
Type Ii ◽  
Type Ii Superlattice ◽  
Gasb Layer

AbstractThis study is based on the investigation of AlSb layer thickness effect on heavy−hole light−hole (HH−LH) splitting and band gap energies in a recently developed N−structure based on InAs/AlSb/GaSb type II superlattice (T2SL) p−i−n photodetector.eFirst principle calculations were carried out tailoring the band gap and HH−LH splitting energies for two possible interface transition alloys of InSb and AlAs between InAs and AlSb interfaces in the superlattice. Results show that AlSb and InAs−GaSb layer thicknesses enable to control HH−LH splitting energies to desired values for Auger recombination process where AlSb/GaSb total layer thickness is equal to InAs layers for the structures with InSb and AlAs interfaces.

Terahertz band-gap in InAs/GaSb type-II superlattices

2009 ◽  
Vol 40 (4-5) ◽  
pp. 812-814 ◽  
Author(s):  
L.L. Li ◽  
W. Xu ◽  
Z. Zeng ◽  
A.R. Wright ◽  
C. Zhang ◽  
...  
Keyword(s):  
Band Gap ◽  
Type Ii ◽  
Terahertz Band ◽  
Type Ii Superlattices

Optical absorption of type-II superlattices

1997 ◽  
Vol 55 (23) ◽  
pp. 15786-15790 ◽  
Author(s):  
S. Glutsch ◽  
P. Lefebvre ◽  
D. S. Chemla
Keyword(s):  
Optical Absorption ◽  
Type Ii ◽  
Type Ii Superlattices

Spectral blueshift and improved luminescent properties with increasing GaSb layer thickness in InAs–GaSb type-II superlattices

2001 ◽  
Vol 89 (4) ◽  
pp. 2185-2188 ◽  
Author(s):  
Andrew P. Ongstad ◽  
Ron Kaspi ◽  
Charles E. Moeller ◽  
Michael L. Tilton ◽  
Donald M. Gianardi ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Luminescent Properties ◽  
Type Ii ◽  
Gasb Layer ◽  
Type Ii Superlattices

Band gap tuning of InAs∕GaSb type-II superlattices for mid-infrared detection

2004 ◽  
Vol 96 (5) ◽  
pp. 2580-2585 ◽  
Author(s):  
H. J. Haugan ◽  
F. Szmulowicz ◽  
G. J. Brown ◽  
K. Mahalingam
Keyword(s):  
Band Gap ◽  
Infrared Detection ◽  
Type Ii ◽  
Mid Infrared ◽  
Type Ii Superlattices ◽  
Band Gap Tuning

Tunable energy gaps and mid-infrared optical properties in InAs/GaSb type-II superlattices

2017 ◽  
Vol 31 (13) ◽  
pp. 1750098 ◽  
Author(s):  
H. M. Dong ◽  
Q. Jin ◽  
X. F. Wang
Keyword(s):  
Layer Thickness ◽  
Type Ii ◽  
Gasb Layer ◽  
Energy Gaps ◽  
Short Period ◽  
Type Ii Superlattices ◽  
Text Model ◽  
Theoretical Results ◽  
Infrared Optical Properties ◽  
Good Agreement

We investigate on the infrared (IR) optoelectronic properties in short-period InAs/GaSb type-II superlattices (SLs) by a modified eight-band [Formula: see text] model. The electronic mini-band structures for such SLs are evaluated by the modified eight-band [Formula: see text] model, incorporating the microscopic interface effect. We find that with varying the values around 20/25 Å for the InAs/GaSb layer widths, the tunable mid-IR bandgaps can be achieved effectively. The SL bandgap from 275 to 346 meV can be achieved by decreasing the InAs layer thickness from 23 to 17 Å at a fixed GaSb layer thickness of 24 Å, or from 254 to 313 meV by increasing the GaSb layer thickness from 18 to 27 Å at a fixed InAs layer thickness of 21 Å. Correspondingly the optical absorptions in such systems can be tuned evidently. Our theoretical results are in good agreement with experimental data over a series of SL samples. This study confirms further that short-period InAs/GaSb type-II SLs are of great importance for IR applications.

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