Structural and optical characterization of InAs/GaSb type-II superlattices: Influence of the change in InAs and GaSb layer thicknesses for fixed InSb-like interfaces

2015 ◽  
Vol 589 ◽  
pp. 813-816 ◽  
Author(s):  
Bulent Arikan ◽  
Melih Korkmaz ◽  
Bulent Aslan ◽  
Uğur Serincan
2020 ◽  
Vol 694 ◽  
pp. 137740 ◽  
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Mostafa Afifi Hassan ◽  
Aadil Waseem ◽  
Muhammad Ali Johar ◽  
Sou Young Yu ◽  
June Key Lee ◽  
...  

2017 ◽  
Vol 50 (32) ◽  
pp. 32LT01 ◽  
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Linlin Su ◽  
Ying Wang ◽  
Qinglin Guo ◽  
Xiaowei Li ◽  
Shufang Wang ◽  
...  

2007 ◽  
Vol 244 (5) ◽  
pp. 1644-1649
Author(s):  
D. Y. Lin ◽  
J. J. Shiu ◽  
J. D. Wu ◽  
C. S. Yang ◽  
W. C. Chou

2002 ◽  
Author(s):  
Xiaodong Mu ◽  
Yujie J. Ding ◽  
Jacob B. Khurgin ◽  
Xiaojun Wang ◽  
Junping Zhang ◽  
...  

2001 ◽  
Vol 89 (4) ◽  
pp. 2185-2188 ◽  
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Andrew P. Ongstad ◽  
Ron Kaspi ◽  
Charles E. Moeller ◽  
Michael L. Tilton ◽  
Donald M. Gianardi ◽  
...  

2011 ◽  
Vol 25 (07) ◽  
pp. 1021-1028
Author(s):  
L. L. LI ◽  
H. M. DONG ◽  
W. XU ◽  
Y. L. SHI

We demonstrate theoretically that terahertz (THz) fundamental band-gap between the electron mini-band in the InAs layer and the heavy-hole mini-band in the GaSb layer can be realized in InAs/GaSb -based type II superlattices (SLs). The THz band-gap can be tuned by varying the widths of the InAs/GaSb layers. The presence of such band-gap can result in a strong cut-off on optical absorption at THz frequencies. For typical sample structures, the THz cut-off of the optical absorption depends sensitively on temperature and a sharper cut-off can be observed at relatively high temperatures. This study is pertinent to the application of InAs/GaSb type II SLs as THz photodetectors.


2013 ◽  
Vol 548 ◽  
pp. 288-291 ◽  
Author(s):  
Bulent Arikan ◽  
Guven Korkmaz ◽  
Yusuf Eren Suyolcu ◽  
Bulent Aslan ◽  
Ugur Serincan

2001 ◽  
Vol 40 (Part 1, No. 12) ◽  
pp. 6747-6752 ◽  
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Song-Bek Che ◽  
Ichirou Nomura ◽  
Tomoyuki Takada ◽  
Akihiko Kikuchi ◽  
Kazuhiko Shimomura ◽  
...  

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