Hydrodynamic simulation of InGaAs terahertz oscillations
2019 ◽
Vol 33
(19)
◽
pp. 1950204
Keyword(s):
Terahertz (THz) oscillations in n[Formula: see text]nn[Formula: see text] In[Formula: see text]Ga[Formula: see text]As diodes have been simulated with the use of a time-dependent hydrodynamic model. Under proper biased voltage and doping concentration, THz self-oscillations show up. The current self-oscillations originate from the formation and propagation of electric field domains in In[Formula: see text]Ga[Formula: see text]As diodes. The In[Formula: see text]Ga[Formula: see text]As device studied here may be presented as an excellent candidate as a solid-state THz source for monolithic integration.
2000 ◽
Vol 33
(1)
◽
pp. 160-167
◽
Keyword(s):
Keyword(s):
2007 ◽
Vol 21
(19)
◽
pp. 1239-1252
◽
1991 ◽
Vol 168
(1)
◽
pp. 123-138
◽