Hydrodynamic simulation of InGaAs terahertz oscillations

2019 ◽  
Vol 33 (19) ◽  
pp. 1950204
Author(s):  
W. Feng

Terahertz (THz) oscillations in n[Formula: see text]nn[Formula: see text] In[Formula: see text]Ga[Formula: see text]As diodes have been simulated with the use of a time-dependent hydrodynamic model. Under proper biased voltage and doping concentration, THz self-oscillations show up. The current self-oscillations originate from the formation and propagation of electric field domains in In[Formula: see text]Ga[Formula: see text]As diodes. The In[Formula: see text]Ga[Formula: see text]As device studied here may be presented as an excellent candidate as a solid-state THz source for monolithic integration.

1997 ◽  
Vol 481 ◽  
Author(s):  
Matthew T. Johnson ◽  
Shelley R. Gilliss ◽  
C. Barry Carter

ABSTRACTThin films of In2O3 and Fe2O3 have been deposited on (001) MgO using pulsed-laser deposition (PLD). These thin-film diffusion couples were then reacted in an applied electric field at elevated temperatures. In this type of solid-state reaction, both the reaction rate and the interfacial stability are affected by the transport properties of the reacting ions. The electric field provides a very large external driving force that influences the diffusion of the cations in the constitutive layers. This induced ionic current causes changes in the reaction rates, interfacial stability and distribution of the phases. Through the use of electron microscopy techniques the reaction kinetics and interface morphology have been investigated in these spinel-forming systems, to gain a better understanding of the influence of an electric field on solid-state reactions.


1992 ◽  
Author(s):  
Nickolay B. Kuleshov ◽  
Victor A. Tarasov ◽  
Igor V. Tokarev ◽  
Sergey S. Sarkisov

2017 ◽  
Vol 767 ◽  
pp. 431-436 ◽  
Author(s):  
Bo Zhang ◽  
Zhi-meng Zhang ◽  
Wei Hong ◽  
Shu-Kai He ◽  
Jian Teng ◽  
...  

Author(s):  
C. Boone ◽  
M. Fuest ◽  
K. Wellmerling ◽  
S. Prakash

Nanofluidic field effect devices feature a gate electrode embedded in the nanochannel wall. The gate electrode creates local variation in the electric field allowing active, tunable control of ionic transport. Tunable control over ionic transport through nanofluidic networks is essential for applications including artificial ion channels, ion pumps, ion separation, and biosensing. Using DC excitation at the gate, experiments have demonstrated multiple current states in the nanochannel, including the ability to switch off the measured current; however, experimental evaluation of transient signals at the gate electrode has not been explored. Modeling results have shown ion transport at the nanoscale has known time scales for diffusion, electromigration, and convection. This supports the evidence detailed here that use of a time-dependent signal to create local perturbation in the electric field can be used for systematic manipulation of ionic transport in nanochannels. In this report, sinusoidal waveforms of various frequencies were compared against DC excitation on the gate electrode. The ionic transport was quantified by measuring the current through the nanochannels as a function of applied axial and gate potentials. It was found that time varying signals have a higher degree of modulation than a VRMS matched DC signal.


AIP Advances ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 115122 ◽  
Author(s):  
Aya Obinata ◽  
Takamasa Hirai ◽  
Yoshinori Kotani ◽  
Kentaro Toyoki ◽  
Tetsuya Nakamura ◽  
...  

2007 ◽  
Vol 21 (19) ◽  
pp. 1239-1252 ◽  
Author(s):  
XIAO-FENG PANG ◽  
BO DENG ◽  
HUAI-WU ZHANG ◽  
YUAN-PING FENG

The temperature-dependence of proton electric conductivity in hydrogen-bonded molecular systems with damping effect was studied. The time-dependent velocity of proton and its mobility are determined from the Hamiltonian of a model system. The calculated mobility of (3.57–3.76) × 10-6 m 2/ Vs for uniform ice is in agreement with the experimental value of (1 - 10) × 10-2 m 2/ Vs . When the temperature and damping effects of the medium are considered, the mobility is found to depend on the temperature for various electric field values in the system, i.e. the mobility increases initially and reaches a maximum at about 191 K, but decreases subsequently to a minimum at approximately 241 K, and increases again in the range of 150–270 K. This behavior agrees with experimental data of ice.


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