NOVEL FLUX INDUCED RESONANT TUNNELING IN THE MESOSCOPIC RING CONFINED BETWEEN POTENTIAL BARRIERS

1995 ◽  
Vol 09 (20) ◽  
pp. 2719-2734 ◽  
Author(s):  
ALMAS F. SADREEV ◽  
VALERY A. VID’MANOV
Keyword(s):  
Magnetic Flux ◽  
Transport Properties ◽  
Resonant Tunneling ◽  
Quantization Condition ◽  
Double Barrier ◽  
One Dimensional ◽  
Potential Barriers ◽  
Mesoscopic Ring ◽  
Aharonov Bohm ◽  
Double Barrier Structure

Transport properties of mesoscopic rings confined between potential barriers are considered. Also considered is the double barrier structure with barriers fabricated of rings connected by a one-dimensional wire. Such structures we define as Aharonov-Bohm diodes with resonant tunneling (ABDRT) because for zero external magnetic flux their transport properties are quite similar to diodes with resonant tunneling (DRT). However, application of external magnetic flux gives rise to new resonant peaks of transmission determined by the quantization condition of the rings. Positions and widths of these novel flux induced resonant peaks extremely depend on the flux.

Resonant tunneling transients and decay for a one-dimensional double barrier potential

2005 ◽  
Vol 97 (1) ◽  
pp. 013705 ◽  
Author(s):  
F. Delgado ◽  
J. G. Muga ◽  
D. G. Austing ◽  
G. García-Calderón
Keyword(s):  
Resonant Tunneling ◽  
Double Barrier ◽  
One Dimensional ◽  
Barrier Potential

THE WIDTH RATIO OF TWO BARRIERS IN RESONANT TUNNELING

2003 ◽  
Vol 17 (03) ◽  
pp. 105-109 ◽  
Author(s):  
MASATO OHMUKAI
Keyword(s):  
Transmission Coefficient ◽  
Resonant Tunneling ◽  
Width Ratio ◽  
Total Width ◽  
Barrier Width ◽  
Barrier Structure ◽  
Double Barrier ◽  
Two Parameters ◽  
Double Barrier Structure ◽  
Two Barriers

Numerical calculations by a transfer matrix method have been performed to obtain the transmission coefficient of rectangular double barrier structures. The dependence of the well width, barrier width and the barrier height was systematically investigated. When the width ratio of the two barriers was varied on condition that a total width was fixed, the transmission coefficient at a resonance is varied while that at a valley region is not. It is concluded that the resonant tunneling is characterized by two parameters: total width and the width ratio. Our results clarify the transition of transmission spectrum from a single barrier to a double barrier structure.

Influence on Characteristics of RTD Due to Variation of Different Parameters and Material Properties

2017 ◽  
Vol 26 (04) ◽  
pp. 1740022 ◽  
Author(s):  
Banasree Das ◽  
Manas Kumar Parai
Keyword(s):  
Simple Model ◽  
Electronic Transport ◽  
Material Properties ◽  
Resonant Tunneling ◽  
Barrier Structure ◽  
Double Barrier ◽  
Tunneling Diode ◽  
Silvaco Atlas ◽  
Double Barrier Structure ◽  
Peak To Valley Ratio

In this paper, novel features offered by Resonant Tunneling Diode (RTD) are reviewed by simulating it under different conditions. GaAs/AlGaAs based RTD is used as the reference one to obtain the characteristics due to parametric variations. To fulfil this purpose a simple model of resonant electronic transport through a double-barrier structure is developed. I-V characteristics are studied by varying barrier parameters and well width. Different peak and valley currents are measured under these conditions. For the same set of parameters both symmetric and asymmetric cases are considered. Different materials of lower effective mass are also taken into consideration to improve Peak to Valley Ratio (PVR). The Indium (In) based materials are considered to compare the characteristics obtained from the conventional GaAs based RTD structure. All these proposed structures are simulated using Silvaco Atlas software.

TRANSPORT THROUGH INTERACTING AHARONOV–BOHM–CASHER INTERFEROMETERS

2011 ◽  
Vol 25 (22) ◽  
pp. 3019-3025
Author(s):  
QING-QIANG XU ◽  
BEN-LING GAO ◽  
SHI-JIE XIONG
Keyword(s):  
Magnetic Flux ◽  
Electronic Transport ◽  
Transport Processes ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Spin Filter ◽  
Rashba Spin ◽  
Mesoscopic Ring ◽  
Universal Regime ◽  
Aharonov Bohm

We investigate the transport properties of an interacting ring threaded by a magnetic flux and with Rashba spin-orbit coupling, based on a recently developed functional renormalized group technique. In the calculations of the electronic transport processes, the Coloumb On-site interactions are taken into account. For an interacting ring connected to two leads, we find that (i) for ΦAC = 0, the behavior of transmission zero at ΦAB = π is generic for the universal regime; (ii) for certain ΦAC and ΦAB, one can use the mesoscopic ring as spin filter even in the presence of the local interaction in the ring.

Resonant Tunneling Effect in Si/SiO2 Double Barrier Structure

2001 ◽  
Author(s):  
Yasuhiko Ishikawa ◽  
Takuma Ishihara ◽  
Masanori Iwasaki ◽  
Michiharu Tabe
Keyword(s):  
Resonant Tunneling ◽  
Tunneling Effect ◽  
Barrier Structure ◽  
Double Barrier ◽  
Resonant Tunneling Effect ◽  
Double Barrier Structure

QUANTUM WAVEGUIDE THEORY FOR TRIPLY CONNECTED AHARONOV–BOHM RINGS

1996 ◽  
Vol 10 (06) ◽  
pp. 701-712 ◽  
Author(s):  
CHANG-MO RYU ◽  
SAM YOUNG CHO ◽  
MINCHEOL SHIN ◽  
KYOUNG WAN PARK ◽  
SEONGJAE LEE ◽  
...  
Keyword(s):  
Magnetic Flux ◽  
Wave Vector ◽  
Quantum Interference ◽  
Transmission Probability ◽  
Interference Effects ◽  
Quantum Waveguide ◽  
One Dimensional ◽  
Waveguide Theory ◽  
Aharonov Bohm ◽  
Transmission And Reflection

Quantum interference effects for a mesoscopic loop with three leads are investigated by using a one-dimensional quantum waveguide theory. The transmission and reflection probabilities are analytically obtained in terms of the magnetic flux, arm length, and wave vector. Oscillation of the magnetoconductance is explicitly demonstrated. Magnetoconductance is found to be sharply peaked for certain localized values of flux and kl. In addition, it is noticed that the periodicity of the transmission probability with respect to kl depends more sensitively on the lead position, compared to the case of the two-lead loop.

InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure

2019 ◽  
Vol 114 (5) ◽  
pp. 053509 ◽  
Author(s):  
Biying Nie ◽  
Jianliang Huang ◽  
Chengcheng Zhao ◽  
Wenjun Huang ◽  
Yanhua Zhang ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Barrier Structure ◽  
Double Barrier ◽  
Tunneling Diode ◽  
Double Barrier Structure
Sign in / Sign up

Export Citation Format

Share Document