COMPOSITION DEPENDENCE OF THE POSITRON ANNIHILATION IN Zn1-xBexSe

2005 ◽  
Vol 19 (17) ◽  
pp. 849-860
Author(s):  
F. BENKABOU

In order to clarify the electronic and optical properties of wide-energy gap zinc-blende structure ZnSe , BeSe and their alloys, a simple pseudo-potential scheme (EPM), within an affective potential the virtual crystal approximation (VCA) which incorporates compositional disorder as an effective potential are presented. Angular correlation of positron annihilation radiation (ACPAR) along different crystallographic directions in Zn 1-x Be x Se are calculated. We observe that the electron-positron momentum density increases rapidly with increasing Beryllium content.

2000 ◽  
Vol 61 (15) ◽  
pp. 10092-10099 ◽  
Author(s):  
V. J. Ghosh ◽  
M. Alatalo ◽  
P. Asoka-Kumar ◽  
B. Nielsen ◽  
K. G. Lynn ◽  
...  

2005 ◽  
Vol 40 (19) ◽  
pp. 5265-5268 ◽  
Author(s):  
M. Chakrabarti ◽  
D. Bhowmick ◽  
A. Sarkar ◽  
S. Chattopadhyay ◽  
S. Dechoudhury ◽  
...  

2020 ◽  
Vol 90 ◽  
pp. 101548 ◽  
Author(s):  
Eugene Churazov ◽  
Laurent Bouchet ◽  
Pierre Jean ◽  
Elisabeth Jourdain ◽  
Jürgen Knödlseder ◽  
...  

2008 ◽  
Vol 22 (12) ◽  
pp. 1221-1229 ◽  
Author(s):  
N. BOUARISSA ◽  
Y. ATIK

Based on the pseudopotential scheme under the virtual crystal approximation that takes into account the effect of compositional disorder combined with the bond-orbital model of Harrison, the results of calculations of elastic constants and surface and bulk acoustic wave speeds of Cd 1-x Zn x Te mixed crystals in the zinc-blende structure are presented. The agreement between our results and known data, which are only available for CdTe and ZnTe is found to be reasonable.


1994 ◽  
Vol 50 (9) ◽  
pp. 6408-6415 ◽  
Author(s):  
R. Pankaluoto ◽  
A. Bansil ◽  
L. C. Smedskjaer ◽  
P. E. Mijnarends

2012 ◽  
Vol 83 (10) ◽  
pp. 10E113 ◽  
Author(s):  
Hui Chen ◽  
R. Tommasini ◽  
J. Seely ◽  
C. I. Szabo ◽  
U. Feldman ◽  
...  

2009 ◽  
Vol 156-158 ◽  
pp. 455-460
Author(s):  
N.Yu. Arutyunov ◽  
Valentin V. Emtsev ◽  
Reinhard Krause-Rehberg

The electron momentum distribution and microstructure of centers incorporating a vacancy (vacancies) and a group-V-impurity atom (P, As, Sb, or Bi) in oxygen-lean n-Ge crystals have been investigated by means of the angular correlation of the annihilation radiation (ACAR). The vacancy-group-V-impurity atom complexes have been induced by irradiation with 60Co γ – rays at Tirr. ≈ 280K. A split between the intensities of the high-momentum emission of the annihilation radiation measured before and after n-p-conversion has been revealed for the complexes containing smaller ion cores (P, As) and the larger ones (Sb, Bi), respectively. After n-p-conversion the electron density decreases slightly (but markedly) around the positron localized at the vacancy complexes incorporating P, Sb, and Bi impurity atom. This decrease is accompanied by a lessening of intensity of the high-momentum emission of the annihilation radiation thus bringing in a direct evidence of a multi-vacancy structure of the vacancy-group-V-impurity atom complexes after n-p-conversion; the electron density was found to be affected by the localized deep acceptor states related to these centers. The relaxation inward open volume is a common feature which is pronounced for As-containing complexes. Subvalent band states are suggested to contribute the high-momentum annihilation most markedly. The electron momentum density around the positron is due to rather by the elemental specificity of the surrounding atoms than by changes of the electron-positron many-body interaction in the vacancy-group-V-impurity atom complexes.


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