PROPERTIES OF GaN-DOPED ZnO THIN FILMS PREPARED BY PULSED LASER DEPOSITION

p-type conduction in ZnO thin films has been realized by doping with GaN . Undoped and GaN -doped ZnO thin films were prepared by the pulsed laser deposition technique. All the grown films have been characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and Hall effect measurements in order to study their structural, morphological and electrical properties, respectively. The presence of dopants in the films has been confirmed by energy dispersive X-ray spectroscopy (EDS). XRD results reveal that the wurtzite structure deviates for the films with higher concentrations of GaN . Hall measurements show that the 5 and 10 at.% GaN -doped ZnO films have p-type conduction.

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P-type nitrogen- and phosphorus-doped ZnO thin films grown by pulsed laser deposition on sapphire substrates

10.1117/12.715024 ◽

2007 ◽

Cited By ~ 2

Author(s):

J.-P. Mosnier ◽

S. Chakrabarti ◽

B. Doggett ◽

E. McGlynn ◽

M. O. Henry ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Thin Films ◽

Nitrogen And Phosphorus ◽

Sapphire Substrates ◽

Doped Zno ◽

P Type ◽

Phosphorus Doped

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Gallium and Nitrogen Co-Doped ZnO Thin Films by Pulsed Laser Deposition

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.368-372.322 ◽

2008 ◽

Vol 368-372 ◽

pp. 322-325

Author(s):

G.X. Liu ◽

F.K. Shan ◽

Byoung Chul Shin ◽

Won Jae Lee

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Thin Films ◽

X Ray ◽

Atomic Force ◽

Different Temperatures ◽

Doped Zno ◽

Co Doped

Pulsed laser deposition (PLD) technique is a very powerful method for fabricating various oxide thin films due to its native merits. In this study, gallium and nitrogen co-doped ZnO thin films (0.1 at.%) were deposited at different temperatures (100-600°C) on sapphire (001) substrates by using PLD. X-ray diffractometer, atomic force microscope, spectrophotometer, and spectrometer were used to characterize the structural, the morphological and the optical properties of the thin films. Hall measurements were also carried out to identify the electrical properties of the thin films.

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Effect of Cu Dopant on the Electrical Property of ZnO Thin Films Deposited by Pulsed Laser Deposition

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.124-126.339 ◽

2007 ◽

Vol 124-126 ◽

pp. 339-342

Author(s):

Gun Hee Kim ◽

Hong Seong Kang ◽

Dong Lim Kim ◽

Hyun Woo Chang ◽

Byung Du Ahn ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Thin Films ◽

X Ray Diffraction ◽

X Ray ◽

Doped Zno ◽

Deposition Conditions

Cu-doped ZnO (denoted by ZnO:Cu) films have been prepared by pulsed laser deposition using 3 wt. CuO doped ZnO ceramic target. The carrier concentrations (1011~1018 cm-3) and, electrical resistivity (10-1~105 cm) of deposited Cu-doped ZnO thin films were varied depending on deposition conditions. Variations of electrical properties of Cu-doped ZnO indicate that copper dopants may play an important role in determining their electrical properties, compared with undoped films. To investigate effects of copper dopants on the properties of ZnO thin films, X-Ray diffraction (XRD), photoluminescence (PL), and Hall measurements have been performed and corresponded.

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A Codoping Route to Realize Low Resistive and Stable p-Type Conduction in (Li, Ni):ZnO Thin Films Grown by Pulsed Laser Deposition

ACS Applied Materials & Interfaces ◽

10.1021/am200197a ◽

2011 ◽

Vol 3 (6) ◽

pp. 1974-1979 ◽

Cited By ~ 23

Author(s):

E. Senthil Kumar ◽

Jyotirmoy Chatterjee ◽

N. Rama ◽

Nandita DasGupta ◽

M. S. Ramachandra Rao

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Thin Films ◽

P Type ◽

Type Conduction

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Pulsed Laser Deposition of ZnO Thin Films for Piezoelectric Applications

MRS Proceedings ◽

10.1557/proc-360-395 ◽

1994 ◽

Vol 360 ◽

Cited By ~ 1

Author(s):

E.P. Donovan ◽

J.S. Horwitz ◽

C.A. Carosella ◽

R.C.Y. Auyeung ◽

D.B. Chrisey ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Rutherford Backscattering Spectrometry ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Thin Films ◽

Zno Films ◽

Infrared Transmission ◽

X Ray ◽

Fused Quartz

AbstractTransparent, insulating ZnO thin films have been deposited in-situ by pulsed laser deposition (PLD) from sintered targets. Films were deposited on substrates of fused quartz, <0001> A12O3, polycrystalline and textured (111) Au, at several substrate deposition temperatures (TSubstrate ≤ 700° C) and background oxygen pressures (P ≤ 300 mTorr). Film structure, morphology and electrical properties were characterized by X-ray diffraction, Rutherford backscattering spectrometry, optical properties were characterized by infrared transmission and reflection, and electrical resistivity was measured normal to the films. Films were crystalline, phase pure, and c-axis oriented. ZnO films deposited onto fused quartz and <0001> sapphire showed x-ray rocking curve full width at half maxima of 5° and 0.34°, respectively. The structure of ZnO films deposited on (111) textured Au was sensitive to the degree of texturing in the Au. The resistivity of PLD ZnO films was 61-63 kΩcm which was a factor of three improvement over sputter deposited films. Deposition of Au by both PLD and IBAD showed a negative correlation between the crystalline texturing and film adherence.

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Fabrication of p-type doped ZnO thin films using pulsed laser deposition

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-005-2308-2 ◽

2005 ◽

Vol 16 (7) ◽

pp. 421-427 ◽

Cited By ~ 15

Author(s):

J. R. Duclère ◽

R. O’Haire ◽

A. Meaney ◽

K. Johnston ◽

I. Reid ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Thin Films ◽

Doped Zno ◽

P Type

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Fabrication of Sb-doped p-type ZnO Thin Films by Pulsed Laser Deposition

Atlas Journal of Materials Science ◽

10.5147/ajms.v2i1.124 ◽

2017 ◽

Vol 2 (1) ◽

pp. 60-64

Author(s):

Yu-Feng Hsiou ◽

Wei-Kuan Hung ◽

Chiu-Wei Wang

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Hole Concentration ◽

Pulsed Laser ◽

Annealing Treatment ◽

Hole Mobility ◽

Laser Deposition ◽

Zno Thin Films ◽

P Type ◽

Type Conduction

In this work, antimony (Sb)-doped p-type ZnO thin films on c-plane sapphire substrates have been fabricated by pulsed laser deposition, with Sb2O3 used as the dopant source. The effects of ambient gas or growth temperature on the fabrication process were investigated. The nitrogen ambient was found to be essential to achieve the p-type conduction. The Hall-effect measurements at room temperature indicated that the ZnO thin films doped with 3 at.% Sb and grown at 600 °C under N2 atmosphere exhibited p-type behavior with a hole concentration of 1.17×1017 cm−3, hole mobility of 0.63 cm2/V·s, and resistivity of 84.51 Ω·cm. X-ray diffraction and scanning electron microscopy revealed good crystallization and homogenous surface morphology of the ZnO:Sb thin films. The optical transmission spectrum of the ZnO:Sb thin films indicated that the energy band gap value was around 2.9 eV. Post-growth annealing at 650 oC converted the p-type conduction to n-type. This result implied that Sb-doping and annealing treatment were dominant factors determining native and extrinsic defects in the ZnO thin films, and thus controlling their electrical conductivity properties.

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