LOCALIZATION EFFECT AND PSEUDOGAP IN PRASEODYMIUM DOPED Y1-zPrzBa2Cu3O7-δ SINGLE CRYSTALS

2012 ◽  
Vol 26 (25) ◽  
pp. 1250163 ◽  
Author(s):  
R. V. VOVK ◽  
Z. F. NAZYROV ◽  
I. L. GOULATIS ◽  
A. CHRONEOS
Keyword(s):  
Temperature Dependence ◽  
Single Crystals ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Localization Effect ◽  
Transverse Conductivity

In this paper, we investigate the temperature dependence of the transverse conductivity in Y 1-z Pr z Ba 2 Cu 3 O 7-δ single crystals with different praseodymium concentrations. It is determined that the increase of the praseodymium concentration in Y 1-z Pr z Ba 2 Cu 3 O 7-δ leads to the enhancement of localization effects. This in turn results to the transition from the pseudo-gap regime to the variable-range-hopping regime.

Transverse conductivity and the pseudogap in YBCO single crystals irradiated with fast electrons

2019 ◽  
Vol 33 (20) ◽  
pp. 1950233
Author(s):  
G. Ya. Khadzhai ◽  
R. V. Vovk ◽  
Yu. V. Litvinov ◽  
V. V. Sklyar ◽  
O. V. Dobrovolskiy
Keyword(s):  
Single Crystals ◽  
Electrical Resistance ◽  
Irradiation Dose ◽  
Charge Carriers ◽  
Variable Range Hopping ◽  
Fast Electrons ◽  
Variable Range ◽  
Before And After ◽  
Temperature Dependences ◽  
Transverse Conductivity

Temperature dependences of the electrical resistance along the c-axis of [Formula: see text] single crystals are investigated before and after irradiation with electrons at 0.5–2.5 MeV energies. The irradiation was done at [Formula: see text] K and the irradiation dose was varied from [Formula: see text] to [Formula: see text]. An enhancement of the charge carriers localization with increase of the irradiation dose has been revealed. A crossover from the pseudogap (PG) regime to the variable-range hopping conductivity has been observed.

Variable Range Hopping Resistivity in La2-xSrxCuO4 Nanoparticles Evaluated by Four Point Probe Method

2020 ◽  
Vol 860 ◽  
pp. 142-147
Author(s):  
Suci Winarsih ◽  
Faisal Budiman ◽  
Hirofumi Tanaka ◽  
Tadashi Adachi ◽  
Takayuki Goto ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Thermal Activation ◽  
Resistivity Measurement ◽  
Probe Method ◽  
Charge Carriers ◽  
High Resistivity ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Hopping Model ◽  
Variable Range Hopping Model

We report the results of the resistivity measurement on La2-xSrxCuO4 nanoparticles with x = 0, 0.05, and 0.20 evaluated by the four-point probe method. The high resistivity value shows the predominance of the inter-grain part. The temperature dependence of the conductivity can be analyzed by variable range hopping model showing the charge carriers are formed by thermal activation. There is no superconducting behavior that could be observed in La2-xSrxCuO4 nanoparticles with x = 0.05 and 0.20.

Variable-range hopping conductivity in Cu2ZnGeSe4 single crystals

2014 ◽  
Vol 127 ◽  
pp. 87-91 ◽  
Author(s):  
M. Guc ◽  
K.G. Lisunov ◽  
E. Hajdeu ◽  
S. Levcenko ◽  
V. Ursaki ◽  
...  
Keyword(s):  
Single Crystals ◽  
Variable Range Hopping ◽  
Hopping Conductivity ◽  
Variable Range

THE HOPPING CONDUCTION OF NEUTRON TRANSMUTED GERMANIUM

1994 ◽  
Vol 08 (07) ◽  
pp. 883-889 ◽  
Author(s):  
A.G. ZABRODSKII ◽  
A.G. ANDREEV
Keyword(s):  
Temperature Dependence ◽  
Nearest Neighbor ◽  
Hopping Conduction ◽  
Variable Range Hopping ◽  
Hopping Transport ◽  
Coulomb Gap ◽  
Variable Range ◽  
Neutron Transmutation ◽  
Mi Transition ◽  
Main Impurity

An investigation was made of a batch of samples of neutron transmutation-doped (NTD) Ge:Ga with the degree of compensation K=0.3 and the concentration of the main impurity (Ga) from N=3.6 · 1014cm−3 to Nc=2.5 · 1017cm−3, corresponding to the MI transition. The following were studied: the parameters of NTD Ge:Ga, the temperature dependence of hopping transport, the ɛ3 region of the nearest neighbor hopping (NNH), the saturation of NNH, variable range hopping (VRH) and the Coulomb gap.

Magnetotransport of Cu2ZnSnS4 single crystals in two regimes of variable–range hopping conduction

2017 ◽  
Vol 53 (2) ◽  
pp. 186-195 ◽  
Author(s):  
M. Guc ◽  
E. Lähderanta ◽  
M. A. Shakhov ◽  
E. Hajdeu-Chicarosh ◽  
E. Arushanov ◽  
...  
Keyword(s):  
Single Crystals ◽  
Hopping Conduction ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Variable Range Hopping Conduction

Conductivity anisotropy in Y1-yPryBa2Cu3O7-δ single crystals in a wide range of praseodymium concentrations

2014 ◽  
Vol 28 (31) ◽  
pp. 1450245 ◽  
Author(s):  
Ruslan V. Vovk ◽  
Georgij Ya. Khadzhai ◽  
Oleksandr V. Dobrovolskiy
Keyword(s):  
Temperature Dependence ◽  
Single Crystals ◽  
Coherence Length ◽  
Conductivity Anisotropy ◽  
Fluctuation Conductivity ◽  
Metallic Conductivity ◽  
Variable Range ◽  
Wide Range ◽  
The Ideal

Anisotropies of different conductivity mechanisms in Y 1-y Pr y Ba 2 Cu 3 O 7-δ single crystals in a wide range of praseodymium concentrations are reported, assuming a transition from the metallic conductivity to the semiconductor-like regime, in conjunction with the fluctuation conductivity within the 3D Aslamazov–Larkin model. The Tc anisotropy grows with increasing y, with a most drastic rise when approaching the non-superconducting composition. As the praseodymium concentration increases, the ideal resistance anisotropy passes through a maximum at y ≈ 0.19. The temperature dependence of the semiconductor-like resistance anisotropy exhibits a maximum associated with variable-range jumps along the c-axis. The temperature dependence of the fluctuation conductivity anisotropy passes through a maximum due to a significant anisotropy of the coherence length.

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