Resistive switching behavior in α-In2Se3 nanoflakes modulated by ferroelectric polarization and interface defects

A planar device based on an α-In2Se3 nanoflake, in which the in-plane/out-of-plane polarization, free carriers and oxygen vacancies in SiO2 contribute to the resistive switching behavior of the device.

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Ferroelectric resistive switching behavior in two-dimensional materials/BiFeO3 hetero-junctions

Nanoscale ◽

10.1039/c8nr05408h ◽

2018 ◽

Vol 10 (48) ◽

pp. 23080-23086 ◽

Cited By ~ 8

Author(s):

Yang Li ◽

Xue-Yin Sun ◽

Cheng-Yan Xu ◽

Jian Cao ◽

Zhao-Yuan Sun ◽

...

Keyword(s):

Resistive Switching ◽

Switching Behavior ◽

Ferroelectric Polarization ◽

Two Dimensional ◽

Resistive Switching Behavior ◽

Two Dimensional Materials ◽

Interface Modulation

We presented thickness-dependent ferroelectric resistive switching in 2D/BFO heterojunctions, which stems from ferroelectric polarization induced hetero-interface modulation.

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Ferroelectric resistance switching in Pt/Fe/BiFeO3/SrRuO3/SrTiO3 heterostructures

Physical Chemistry Chemical Physics ◽

10.1039/d0cp00124d ◽

2020 ◽

Vol 22 (23) ◽

pp. 13277-13284

Author(s):

Wanchao Zheng ◽

Yuchen Wang ◽

Chao Jin ◽

Ruihua Yin ◽

Dong Li ◽

...

Keyword(s):

Resistive Switching ◽

Resistance Switching ◽

Depletion Layer ◽

Switching Behavior ◽

Ferroelectric Polarization ◽

Resistive Switching Behavior ◽

Layer Width ◽

Depletion Layer Width

The resistive switching behavior in the Pt/Fe/BiFeO3/SrRuO3 heterostructures was observed. It results from the ferroelectric polarization modulated the depletion layer width around the BiFeO3/SrRuO3 interface.

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Evidence for the dynamic relaxation behavior of oxygen vacancies in Aurivillius Bi2MoO6 from dielectric spectroscopy during resistance switching

Journal of Materials Chemistry C ◽

10.1039/c9tc02693b ◽

2019 ◽

Vol 7 (29) ◽

pp. 8915-8922 ◽

Cited By ~ 1

Author(s):

Fei Guo ◽

Mengting Zhao ◽

Kang Xu ◽

Yu Huan ◽

Shuaipeng Ge ◽

...

Keyword(s):

Resistive Switching ◽

Dielectric Spectroscopy ◽

Oxygen Vacancies ◽

Relaxation Behavior ◽

Switching Behavior ◽

Dynamic Relaxation ◽

Resistive Switching Behavior ◽

Ion Conductor ◽

Oxygen Ion ◽

Oxygen Ion Conductor

The resistive switching behavior of oxygen ion conductor Bi2MoO6 were investigated by dielectric spectroscopy.

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Unipolar Resistive Switching Behavior Study in CuxO Thin Films at Different Annealing Temperatures

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.586.24 ◽

2012 ◽

Vol 586 ◽

pp. 24-29

Author(s):

Ying Li ◽

Gao Yang Zhao ◽

Fen Shi

Keyword(s):

Thin Films ◽

Resistive Switching ◽

Oxygen Vacancies ◽

Annealing Temperature ◽

Switching Behavior ◽

Resistive Switching Behavior ◽

Surface And Interface ◽

Behavior Study ◽

Interface Structures ◽

Unipolar Resistive Switching

We investigated unipolar resistance switching in CuxO thin films. We studied on the resistive switching behavior associated with the annealing temperature of CuxO thin films and focused on HRTEM, XPS and AFM analyses. In this paper we investigated the surface and interface structures of CuxO films. Results show that there is a mount of oxygen content in the CuxO thin films which is contained in Cu (Ⅱ) oxides and Cu (Ⅰ) oxides. When annealing temperature increases the qualification of oxygen vacancies increase and more oxygen vacancies is connected with top and bottom electrode.

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