Quantum chaos and statistical properties of energy levels for atom in parallel electric and magnetic fields

2015 ◽  
Vol 29 (35n36) ◽  
pp. 1550248
Author(s):  
Hai-Feng Yang ◽  
Yong-Gang Tan ◽  
Zhong-Li Liu ◽  
Hong-Zhi Fu
Keyword(s):  
Magnetic Fields ◽  
Quantum Chaos ◽  
Chaotic Dynamics ◽  
Nearest Neighbor ◽  
Energy Levels ◽  
Statistical Properties ◽  
The Core ◽  
Ideal System ◽  
Electric And Magnetic Fields ◽  
Diagonalization Method

In this paper, the statistical properties of energy levels are studied numerically for atom in parallel electric and magnetic fields, which is an ideal system to examine the contributions of external fields and ionic core to quantum chaos. The Stark maps of diamagnetic spectra and nearest neighbor spacing (NNS) distributions are obtained by diagonalization method incorporating core effect. We identify obvious level anti-crossing and large value of [Formula: see text] for barium, indicating that core effect has predominant contribution to chaotic dynamics in barium. To study the core effect in detail, we sweep the quantum defect artificially and find that larger core effect will undoubtedly induce stronger chaotic dynamics.

scholarly journals Partial dynamical symmetry versus quasi dynamical symmetry examination within a quantum chaos analyses of spectral data for even–even nuclei

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
H. Sabri ◽  
S. K. Mousavi Mobarakeh ◽  
A. J. Majarshin ◽  
Yan-An Luo ◽  
Feng Pan
Keyword(s):  
Quantum Chaos ◽  
Nearest Neighbor ◽  
Matrix Theory ◽  
Chaotic Behavior ◽  
Energy Levels ◽  
Dynamical Symmetry ◽  
Mass Region ◽  
Band Head ◽  
Symmetry Limit ◽  
Rotational Bands

AbstractStatistical analyses of the spectral distributions of rotational bands in 51 deformed prolate even–even nuclei in the 152 ≤ A ≤ 250 mass region $$R_{{4_{1}^{ + } /2_{1}^{ + } }} \ge 3.00$$ R 4 1 + / 2 1 + ≥ 3.00 are examined in terms of nearest neighbor spacing distributions. Specifically, the focus is on data for 0+, 2+, and 4+ energy levels of the ground, gamma, and beta bands. The chaotic behavior of the gamma band, especially the position of the $$2_{\gamma }^{ + }$$ 2 γ + band-head compared to other levels and bands, is clear. The levels are analyzed within the framework of two models, namely, a SU(3)-partial dynamical symmetry Hamiltonian and a SU(3) two-coupled quasi-dynamical symmetry Hamiltonian, with results that are further analyzed using random matrix theory. The partial and quasi dynamics both yield outcomes that are in reasonable agreement with the known experimental results. However, due to the degeneracy of the beta and gamma bands within the simplest SU(3) picture, the theory cannot be used to describe the fluctuation properties of excited bands. By changing relative weights of the different terms in the partial and quasi dynamical Hamiltonians, results are obtained that show more GOE-like statistics in the partial dynamical formalism as the strength of the pairing term is increased. Also, in the quasi-dynamical symmetry limit, more correlations are found because of the stronger couplings.

scholarly journals Program Processing Database Data for Calculation of Spectral Lines Width and Shift in Plasma

2017 ◽  
Vol 4 (3) ◽  
pp. 277-280
Author(s):  
J. Pokorný
Keyword(s):  
Magnetic Fields ◽  
Temperature Dependence ◽  
Stark Effect ◽  
Energy Levels ◽  
Circuit Breaker ◽  
Spectral Lines ◽  
Stark Broadening ◽  
Electric And Magnetic Fields

Electric and magnetic fields cause splitting of energy levels in an atom. Transition of electrons among these levels could be seen as broadening and shift of spectral lines. We recognize various types of effects, the most important is Stark effect. We developed a program for calculations of temperature dependence linear coefficients of Stark broadening and shift of spectral lines. Our results were calcutated for temperatures usual for SF<sub>6</sub> circuit breaker.

scholarly journals Theoretical Study of Electronic and Optical Properties in Doped Quantum Structures with Razavy Confining Potential: Effects of External Fields

2021 ◽  
Author(s):  
Hassen Dakhlaoui ◽  
J. A. Gil-Corrales ◽  
A. L. Morales ◽  
E. Kasapoglu ◽  
A. Radu ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Energy Levels ◽  
Circular Cross Section ◽  
Optical Absorption Coefficient ◽  
Quantum Structures ◽  
Energy Separation ◽  
Layer Width ◽  
Electric And Magnetic Fields ◽  
Self Consistent ◽  
Energy States

Abstract We investigate the energy states of confined electrons in doped quantum structures with Razavy-like confining potentials. The theoretical investigation is performed within the effective mass and parabolic band approximations, including the influence of externally applied electric and magnetic fields. First, we analyze the case of a Razavy quantum well and determine its conduction subband spectrum, focusing on the lowest energy levels and their probability densities. These properties have been numerically determined by self-consistently solving the coupled system of Schr\"{o}dinger, Poisson, and charge neutrality equations. Doping is introduced via an on-center $\delta$-like layer. In order to evaluate the associated total (linear plus nonlinear) optical absorption coefficient (TOAC), we have calculated the corresponding diagonal and off-diagonal electric dipole matrix elements, the main energy separation, and the occupancy ratio which are the main factors governing the variation of this optical response. A detailed discussion is given about the influence of doping concentration as well as electric and magnetic fields, which can produce shifts in the light absorption signal, towards either lower or higher frequencies. As an extension of the self-consistent method to a two-dimensional problem, the energy states of quantum wire system of circular cross section, with internal doping and Razavy potential have been calculated. The response of eigenvalues, self-consistent potentials and electron densities is studied with the variation of $\delta$-doping layer width and of the donor density. Finally, the origin of Friedel-like oscillations, that arise in the density profile, generated by the occupation of internal and surface electronic states has been explained.

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