The thermoelectric properties of CoSb3 compound doped with Te and Sn synthesized at different pressure

2017 ◽  
Vol 31 (28) ◽  
pp. 1750261 ◽  
Author(s):  
Yiping Jiang ◽  
Xiaopeng Jia ◽  
Hongan Ma
Keyword(s):  
Thermal Conductivity ◽  
High Pressure ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Raw Materials ◽  
Absolute Value ◽  
Dimensionless Figure Of Merit

The skutterudite CoSb[Formula: see text]Te[Formula: see text]Sn[Formula: see text] compound was synthesized successfully by high pressure and high temperature (HPHT) method using Co, Sb, Te and Sn powder as raw materials. The effects of pressure on its structure and the thermoelectric properties are investigated systematically from 300 K to 800 K. The electrical resistivity and the absolute value of the Seebeck coefficient for the sample increases with rising synthetic pressure. The thermal conductivity of the sample decreases with synthetic pressure and temperature rising in the range of 300–800 K. In this study, the maximum dimensionless figure of merit (ZT) value of 1.17 has been achieved at 793 K, 3 GPa for this thermoelectric material.

FEM Analysis on Thermoelectric Properties of Metal/TiO2–x Composites with Random Distribution of Metal Powder

2013 ◽  
Vol 750 ◽  
pp. 130-133
Author(s):  
Katsuhiro Sagara ◽  
Yun Lu ◽  
Dao Cheng Luan
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Figure Of Merit ◽  
Random Distribution ◽  
The Other ◽  
Dimensionless Figure Of Merit ◽  
Wide Range

Analysis model of finite element method with a random distribution for thermoelectric composites was built. Thermoelectric properties including electrical resistivity, Seebeck coefficient and thermal conductivity of M/TiO2–x (M = Cu, Ni, 304 stainless steel (304SS)) thermoelectric composites were investigated by the proposed model. Cu/TiO2–x composite showed a large decrease in electrical resistivity while 304SS/TiO2–x composite thermal conductivity was slightly increased. Calculated dimensionless figure-of-merit, ZT of Ni/TiO2–x composite was higher than those of TiO2–x and the other composites in a wide range of metal volume fractions because Ni has large absolute values of Seebeck coefficient, power factor and dimensionless figure-of-merit compared to the other two metals. It was found that power factor and dimensionless figure-of-merit of thermoelectric composites depended on the balance among electrical resistivity, thermal conductivity and Seebeck coefficient. The results revealed that it is important for M/TiO2–x composites to choose suitable addition metal with high power factor and dimensionless figure-of-merit.

Thermoelectric Properties of Tl-X-Te (X=Pb, Sn, Ge) Systems

2005 ◽  
Vol 886 ◽  
Author(s):  
Atsuko Kosuga ◽  
Ken Kurosaki ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Solid State ◽  
Electrical Properties ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Lattice Thermal Conductivity ◽  
Dimensionless Figure Of Merit

ABSTRACTPolycrystalline-sintered samples of Tl2GeTe3, Tl4SnTe3, and Tl4PbTe3 were prepared by a solid-state reaction. Their thermoelectric properties were evaluated at temperatures ranging from room temperature to ca. 700 K by using the measured electrical resistivity (ρ), Seebeck coefficient (S), and thermal conductivity (κ). Despite their poor electrical properties, the dimensionless figure of merit ZT of all the compounds was relatively high, i.e., 0.74 at 673 K for Tl4SnTe3, 0.71 at 673 K for Tl4PbTe3, 0.29 at 473 K for Tl2GeTe3, due to the very low lattice thermal conductivity of the compounds.

Thermoelectric Properties of Semiconducting Intermetallic Compounds: FeGa3and RuGa3

2003 ◽  
Vol 793 ◽  
Author(s):  
Y. Amagai ◽  
A. Yamamoto ◽  
C. H. Lee ◽  
H. Takazawa ◽  
T. Noguchi ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
High Seebeck Coefficient

ABSTRACTWe report transport properties of polycrystalline TMGa3(TM = Fe and Ru) compounds in the temperature range 313K<T<973K. These compounds exhibit semiconductorlike behavior with relatively high Seebeck coefficient, electrical resistivity, and Hall carrier concentrations at room temperature in the range of 1017- 1018cm−3. Seebeck coefficient measurements reveal that FeGa3isn-type material, while the Seebeck coefficient of RuGa3changes signs rapidly from large positive values to large negative values around 450K. The thermal conductivity of these compounds is estimated to be 3.5Wm−1K−1at room temperature and decreased to 2.5Wm−1K−1for FeGa3and 2.0Wm−1K−1for RuGa3at high temperature. The resulting thermoelectric figure of merit,ZT, at 945K for RuGa3reaches 0.18.

High-temperature thermoelectric properties of W-substituted CaMnO3

2013 ◽  
Vol 1490 ◽  
pp. 3-8 ◽  
Author(s):  
Dimas S. Alfaruq ◽  
James Eilertsen ◽  
Philipp Thiel ◽  
Myriam H Aguirre ◽  
Eugenio Otal ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Soft Chemistry ◽  
Absolute Seebeck Coefficient

AbstractThe thermoelectric properties of W-substituted CaMn1-xWxO3-δ (x = 0.01, 0.03; 0.05) samples, prepared by soft chemistry, were investigated from 300 K to 1000 K and compared to Nb-substituted CaMn0.98Nb0.02O3-δ. All compositions exhibit both an increase in absolute Seebeck coefficient and electrical resistivity with temperature. Moreover, compared to the Nb-substituted sample, the thermal conductivity of the W-substituted samples was strongly reduced. This reduction is attributed to the nearly two times greater mass of tungsten. Consequently, a ZT of 0.19 was found in CaMn0.97W0.03O3-δ at 1000 K, which was larger than ZT exhibited by the 2% Nb-doped sample.

Thermoelectric properties of S-doped Cu2Se materials synthesized by high-pressure and high-temperature method

2019 ◽  
Vol 34 (01) ◽  
pp. 2050006
Author(s):  
Lisha Xue ◽  
Chao Fang ◽  
Weixia Shen ◽  
Manjie Shen ◽  
Wenting Ji ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
High Pressure ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Thermoelectric Properties ◽  
Composition Change ◽  
Selenium Compounds ◽  
Competitive Effects ◽  
Temperature Method ◽  
Pressure Synthesis

High-pressure technique is an effective route to synthesize thermoelectric materials and tune transport properties simultaneously. In this work, S-doped copper–selenium compounds [Formula: see text], [Formula: see text] were successfully synthesized by high-pressure and high-temperature (HPHT) technology in just 30 min. [Formula: see text] samples show layered morphology composed of abundant pores and lattice defects. The appropriate S introduction ([Formula: see text] and 0.03) can effectively enhance Seebeck coefficient and reduce the thermal conductivity of [Formula: see text]. Compared with the pure [Formula: see text] sample, [Formula: see text] exhibits a 30% lower thermal conductivity, but the decline of power factor by the distinctly increased electrical resistivity at high temperature results in a smaller zT at temperature [Formula: see text] K. The variations of thermoelectric properties are resulted from the competitive effects between S-doping and actual composition change (Cu:S). It indicates that S-doping is not so effective in improving the zT value of [Formula: see text] materials by high-pressure synthesis.

Preparation and Thermoelectric Properties of Bi-Doped Mg2Si Nanocomposites

2009 ◽  
Vol 66 ◽  
pp. 17-20 ◽  
Author(s):  
Mei Jun Yang ◽  
Wei Jun Luo ◽  
Qiang Shen ◽  
Hong Yi Jiang ◽  
Lian Meng Zhang
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Dimensionless Figure Of Merit ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
Heavy Doping ◽  
Nanocomposite Structures

Nanocomposites and heavy doping both are regarded as effective way to improve materials’ thermoelectric properties. 0.7at% Bi-doped Mg2Si nanocomposites were prepared by spark plasma sintering. Results of thermoelectric properties tests show that the doping of Bi atom effectively improves the electrical conductivity of Mg2Si，and the nanocomposite structures are helpful to reduce thermal conductivity and increase Seebeck coefficient, hence improving the thermoelectric performance. A maximum dimensionless figure of merit of 0.8 is obtained for the Bi-doped Mg2Si nanocomposite with 50 wt % nanopowder inclusions at 823K, about 63% higher than that of Bi-doped Mg2Si sample without nanopowder inclusions and 119% higher than that of microsized Mg2Si sample without Bi-doped, respectively.

Thermoelectric properties of InxPbxCo4Sb12 prepared by HPHT

2016 ◽  
Vol 09 (01) ◽  
pp. 1650008 ◽  
Author(s):  
Le Deng ◽  
Li Bin Wang ◽  
Jie Ming Qin ◽  
Xiao Peng Jia ◽  
Hong An Ma
Keyword(s):  
Thermal Conductivity ◽  
High Pressure ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Microprobe Analysis ◽  
Electron Microprobe Analysis ◽  
Substantial Reduction ◽  
X Ray Diffraction ◽  
X Ray

We prepared InxPbxCo4Sb[Formula: see text] by high-pressure and high-temperature (HPHT) method. Samples were characterized by X-ray diffraction (XRD), electron microprobe analysis and thermoelectric properties measurements. The Seebeck coefficient, electrical resistivity and thermal conductivity of InxPbxCo4Sb[Formula: see text] samples were all performed in the temperature range of 323–723[Formula: see text]K. With the increasing synthetic pressure, the Seebeck coefficient of In[Formula: see text]Pb[Formula: see text]Co4Sb[Formula: see text] samples, which synthesized between 1.5 GPa–2.3 GPa, showed an obvious increase while the thermal conductivity exhibited a substantial reduction.

Thermoelectric Properties of La-doped BaSi2 and (Ba,Sr)Si2 Solid Solutions

2007 ◽  
Vol 1044 ◽  
Author(s):  
Kohsuke Hashimoto ◽  
Ken Kurosaki ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka
Keyword(s):  
Thermal Conductivity ◽  
Solid Solution ◽  
Electrical Resistivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Dimensionless Figure Of Merit ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
La Doped

AbstractWe studied the thermoelectric properties of BaSi2 and SrSi2. The polycrystalline samples were prepared by spark plasma sintering (SPS). The electrical resistivity (ρ), Seebeck coefficient (S), and thermal conductivity (κ) were measured above room temperature. The maximum values of the dimensionless figure of merit (ZT) were 0.01 at 954 K for BaSi2 and 0.09 at 417 K for SrSi2. We tried to enhance the ZT values of BaSi2 and SrSi2 by prepareing and characterizing La-doped BaSi2 and (Ba,Sr)Si2 solid solution.

Thermoelectric properties of the Al-TM-Si (TM = Mn, Re) 1/1-cubic approximant

2003 ◽  
Vol 805 ◽  
Author(s):  
Tsunehiro Takeuchi ◽  
Toshio Otagiri ◽  
Hiroki Sakagami ◽  
Uichiro Mizutani
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Thermoelectric Power ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Low Thermal Conductivity ◽  
Dimensionless Figure Of Merit

ABSTRACTThe electrical resistivity, thermoelectric power, and thermal conductivity were investigated for the Al71.6-xMn 17.4Six and Al71.6-xRe 17.4Six (7 ≤ x ≤ 12) 1/1-cubic approximants. A large thermoelectric power ranging from -40 to 90 μV/K and a low thermal conductivity less than 3 W/K·cm were observed at room temperatures. The electrical resistivity at room temperature for these approximants was kept below 4,000 μΩcm, that is much smaller than that in the corresponding quasicrystals. As a result of the large thermoelectric power, the low thermal conductivity, and the low electrical resistivity, large dimensionless figure of merit ZT = 0.10 (n-type) and 0.07 (p-type) were achieved for the Al71.6Re17.4Si11 and Al71.6Mn17.4Si11 at room temperature, respectively.

Directional Thermoelectric Performance of Ru2Si3

2004 ◽  
Vol 842 ◽  
Author(s):  
Benjamin A. Simkin ◽  
Yoshinori Hayashi ◽  
Haruyuki Inui
Keyword(s):  
High Temperature ◽  
Seebeck Coefficient ◽  
Domain Structure ◽  
Thermoelectric Properties ◽  
Crystal Orientation ◽  
Figure Of Merit ◽  
Orthorhombic Phase ◽  
Thermoelectric Performance ◽  
Dimensionless Figure Of Merit ◽  
Principal Axes

ABSTRACTThe orthorhombic compound Ru2Si3 is currently of interest as a high-temperature thermoelectric material. In order to clarify the effects of crystal orientation on the thermoelectric properties of Ru2Si3, we have examined the microstructure, Seebeck coefficient, electrical resistivity, and thermal conductivity of Ru2Si3 along the three principal axes, using these measured quantities to describe the relative thermoelectric performance as a property of crystal orientation. Ru2Si3 undergoes a high temperature (HT)→low temperature (LT) phase change and polycrystalline Si platelet precipitation during cooling, both of which are expected to effect the thermoelectric properties. The HT tetragonal→LT orthorhombic phase transformation results in a [010]//[010], [100]//[001] two-domain structure, while polycrystalline Si precipitation occurs on the (100)LT and (001)LT planes. The [010] orientation is found to posses superior thermoelectric properties (with the dimensionless figure of merit, ZT[010]/ZT[100]>4 at 650°C), due principally to the larger Seebeck coefficient along the [010] direction. The effect of the domain structure on the thermoelectric properties is discussed.

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