Directional Thermoelectric Performance of Ru2Si3

2004 ◽  
Vol 842 ◽  
Author(s):  
Benjamin A. Simkin ◽  
Yoshinori Hayashi ◽  
Haruyuki Inui
Keyword(s):  
High Temperature ◽  
Seebeck Coefficient ◽  
Domain Structure ◽  
Thermoelectric Properties ◽  
Crystal Orientation ◽  
Figure Of Merit ◽  
Orthorhombic Phase ◽  
Thermoelectric Performance ◽  
Dimensionless Figure Of Merit ◽  
Principal Axes

ABSTRACTThe orthorhombic compound Ru2Si3 is currently of interest as a high-temperature thermoelectric material. In order to clarify the effects of crystal orientation on the thermoelectric properties of Ru2Si3, we have examined the microstructure, Seebeck coefficient, electrical resistivity, and thermal conductivity of Ru2Si3 along the three principal axes, using these measured quantities to describe the relative thermoelectric performance as a property of crystal orientation. Ru2Si3 undergoes a high temperature (HT)→low temperature (LT) phase change and polycrystalline Si platelet precipitation during cooling, both of which are expected to effect the thermoelectric properties. The HT tetragonal→LT orthorhombic phase transformation results in a [010]//[010], [100]//[001] two-domain structure, while polycrystalline Si precipitation occurs on the (100)LT and (001)LT planes. The [010] orientation is found to posses superior thermoelectric properties (with the dimensionless figure of merit, ZT[010]/ZT[100]>4 at 650°C), due principally to the larger Seebeck coefficient along the [010] direction. The effect of the domain structure on the thermoelectric properties is discussed.

The thermoelectric properties of CoSb3 compound doped with Te and Sn synthesized at different pressure

2017 ◽  
Vol 31 (28) ◽  
pp. 1750261 ◽  
Author(s):  
Yiping Jiang ◽  
Xiaopeng Jia ◽  
Hongan Ma
Keyword(s):  
Thermal Conductivity ◽  
High Pressure ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Raw Materials ◽  
Absolute Value ◽  
Dimensionless Figure Of Merit

The skutterudite CoSb[Formula: see text]Te[Formula: see text]Sn[Formula: see text] compound was synthesized successfully by high pressure and high temperature (HPHT) method using Co, Sb, Te and Sn powder as raw materials. The effects of pressure on its structure and the thermoelectric properties are investigated systematically from 300 K to 800 K. The electrical resistivity and the absolute value of the Seebeck coefficient for the sample increases with rising synthetic pressure. The thermal conductivity of the sample decreases with synthetic pressure and temperature rising in the range of 300–800 K. In this study, the maximum dimensionless figure of merit (ZT) value of 1.17 has been achieved at 793 K, 3 GPa for this thermoelectric material.

Preparation and Thermoelectric Properties of Bi-Doped Mg2Si Nanocomposites

2009 ◽  
Vol 66 ◽  
pp. 17-20 ◽  
Author(s):  
Mei Jun Yang ◽  
Wei Jun Luo ◽  
Qiang Shen ◽  
Hong Yi Jiang ◽  
Lian Meng Zhang
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Dimensionless Figure Of Merit ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
Heavy Doping ◽  
Nanocomposite Structures

Nanocomposites and heavy doping both are regarded as effective way to improve materials’ thermoelectric properties. 0.7at% Bi-doped Mg2Si nanocomposites were prepared by spark plasma sintering. Results of thermoelectric properties tests show that the doping of Bi atom effectively improves the electrical conductivity of Mg2Si，and the nanocomposite structures are helpful to reduce thermal conductivity and increase Seebeck coefficient, hence improving the thermoelectric performance. A maximum dimensionless figure of merit of 0.8 is obtained for the Bi-doped Mg2Si nanocomposite with 50 wt % nanopowder inclusions at 823K, about 63% higher than that of Bi-doped Mg2Si sample without nanopowder inclusions and 119% higher than that of microsized Mg2Si sample without Bi-doped, respectively.

Thermoelectric performance of Al–Pd–Mn quasicrystals: comparison with (1/1, 2/1-)AlPdMnSi approximants and improvement by Ga substitution for Al

2009 ◽  
Vol 224 (1-2) ◽  
Author(s):  
Yoshiki Takagiwa ◽  
Takahiko Kamimura ◽  
Sizuka Hosoi ◽  
Kaoru Kimura
Keyword(s):  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Dimensionless Figure Of Merit ◽  
Ga Substitution

AbstractWe report the thermoelectric properties of polygrain icosahedral Al–Pd–Mn quasicrystal and compare with those of (1/1, 2/1-)AlPdMnSi approximant crystals. To improve the dimensionless figure of merit (

FEM Analysis on Thermoelectric Properties of Metal/TiO2–x Composites with Random Distribution of Metal Powder

2013 ◽  
Vol 750 ◽  
pp. 130-133
Author(s):  
Katsuhiro Sagara ◽  
Yun Lu ◽  
Dao Cheng Luan
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Figure Of Merit ◽  
Random Distribution ◽  
The Other ◽  
Dimensionless Figure Of Merit ◽  
Wide Range

Analysis model of finite element method with a random distribution for thermoelectric composites was built. Thermoelectric properties including electrical resistivity, Seebeck coefficient and thermal conductivity of M/TiO2–x (M = Cu, Ni, 304 stainless steel (304SS)) thermoelectric composites were investigated by the proposed model. Cu/TiO2–x composite showed a large decrease in electrical resistivity while 304SS/TiO2–x composite thermal conductivity was slightly increased. Calculated dimensionless figure-of-merit, ZT of Ni/TiO2–x composite was higher than those of TiO2–x and the other composites in a wide range of metal volume fractions because Ni has large absolute values of Seebeck coefficient, power factor and dimensionless figure-of-merit compared to the other two metals. It was found that power factor and dimensionless figure-of-merit of thermoelectric composites depended on the balance among electrical resistivity, thermal conductivity and Seebeck coefficient. The results revealed that it is important for M/TiO2–x composites to choose suitable addition metal with high power factor and dimensionless figure-of-merit.

Dramatically Enhanced Thermoelectric Properties of Ca3Co4Oy by Large Amount of RE Substitution

2004 ◽  
Vol 848 ◽  
Author(s):  
Y. Sugiura ◽  
S. Horii ◽  
T. Kumagai ◽  
T. Okamoto ◽  
K. Otzschi ◽  
...  
Keyword(s):  
Rare Earth ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Rare Earth Element ◽  
Figure Of Merit ◽  
Ionic Radius ◽  
Earth Element ◽  
Synthesis Conditions ◽  
Local Structures ◽  
Dimensionless Figure Of Merit

ABSTRACTWe report the synthesis and thermoelectric properties of [(Ca1-xREx)2CoO3-δ]0.62CoO2 compounds (RE: rare earth element, RE = Y, Sm, Eu, Tb, Dy, Ho and Lu). From optimization of synthesis conditions, all the chosen RE in this study were able to be substituted for the Ca sites in the block layers up to x = 0.25. In the case of RE = Tb, at 1150 K, only κ was systematically decreased with x, while both Seebeck coefficient (S) and resistivity (ρ) were almost constant for the charge of x. Consequently, the dimensionless figure of merit (ZT) was increased with x and reached 0.2 at 1150 K for x = 0.25. Moreover, interestingly, it was found that S and ρ at 300 K were enhanced with ionic radius of the doped trivalent RE ions in spite of the doping of equivalent RE ions. This is probably because local structures of oxygen sites around Co ion in the CoO2 layers largely depend on kinds of the doped RE.

Preparation and High Temperature Thermoelectric Properties of [Ca2(Co0.65Cu0.35)2O4]0.624CoO2 Compound

2007 ◽  
Vol 336-338 ◽  
pp. 805-808 ◽  
Author(s):  
Xiao Ya Li ◽  
Yun Yu ◽  
Dong Li Wang ◽  
Li Dong Chen
Keyword(s):  
High Temperature ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Conduction Mechanism ◽  
Sol Gel ◽  
Hopping Conduction ◽  
Dimensionless Figure Of Merit ◽  
Plasma Sintering ◽  
Thermoelectric Energy ◽  
Spark Plasma

[Ca2(Co0.65Cu0.35)2O4]0.624CoO2 polycrystalline samples were prepared using sol-gel method followed by spark plasma sintering. Thermoelectric properties of the samples were examined from room temperature to 1000K. The temperature dependence of electrical conductivity shows that the hole hopping conduction mechanism is dominant for the samples. The activation energy of hopping conduction is 0.11 eV. At the temperature of about 1000K, the electrical resistivity is 7.1m cm, the thermopower is 160 μVK-1, the thermal conductivtity is 2.94Wm-1K-1 and dimensionless figure of merit reaches 0.12. These results indicate [Ca2(Co0.65Cu0.35)2O4]0.624CoO2 is a potential material for high temperature thermoelectric energy conversion.

High Thermoelectric Performance of p-Type Bi0.5Sb1.5Te3+xTe Crystals Prepared via Gradient Freezing

2012 ◽  
Vol 621 ◽  
pp. 167-171
Author(s):  
Tao Hua Liang ◽  
Shi Qing Yang ◽  
Zhi Chen ◽  
Qing Xue Yang
Keyword(s):  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
P Type

p-type Bi0.5Sb1.5Te3+xTe thermoelectric crystals with various percentages of Te (x = 0.00 wt.%–3.00 wt.%) excess were prepared by the gradient freeze method. By doping with different Te contents, anti-site defects, Te vacancies and hole carrier concentrations were controlled. The Seebeck coefficient, resistivity, thermal conductivity, carrier concentration, and mobility were measured. The relationships between the Te content and thermoelectric properties were investigated in detail. The results suggested that the thermoelectric figure of merit ZT of the Bi0.5Sb1.5Te3+0.09wt.% crystals was 1.36 near room temperature, the optimum carrier concentration was 1.25 × 1019 cm-3, and the mobility was 1480 cm2 V-1 S-1, respectively.

Thermoelectric Properties of Tl-X-Te (X=Pb, Sn, Ge) Systems

2005 ◽  
Vol 886 ◽  
Author(s):  
Atsuko Kosuga ◽  
Ken Kurosaki ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Solid State ◽  
Electrical Properties ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Lattice Thermal Conductivity ◽  
Dimensionless Figure Of Merit

ABSTRACTPolycrystalline-sintered samples of Tl2GeTe3, Tl4SnTe3, and Tl4PbTe3 were prepared by a solid-state reaction. Their thermoelectric properties were evaluated at temperatures ranging from room temperature to ca. 700 K by using the measured electrical resistivity (ρ), Seebeck coefficient (S), and thermal conductivity (κ). Despite their poor electrical properties, the dimensionless figure of merit ZT of all the compounds was relatively high, i.e., 0.74 at 673 K for Tl4SnTe3, 0.71 at 673 K for Tl4PbTe3, 0.29 at 473 K for Tl2GeTe3, due to the very low lattice thermal conductivity of the compounds.

Investigation of Thermoelectric Materials: Substitution effect of Bi on the Ag1-xPb18MTe20 (M = Sb, Bi) (x = 0, 0.14, 0.3)

2007 ◽  
Vol 1044 ◽  
Author(s):  
Mi-kyung Han ◽  
Huijun Kong ◽  
Ctirad Uher ◽  
Mercouri G Kanatzidis
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Substitution Effect ◽  
Dimensionless Figure Of Merit ◽  
The Matrix ◽  
Mass Fluctuation

AbstractWe performed comparative investigations of the Ag1-xPb18MTe20 (M = Bi, Sb) (x = 0, 0.14, 0.3) system to better understand the roles of Sb and Bi on the thermoelectric properties. In both systems, the electrical conductivity nearly keeps the same values, while the Seebeck coefficient decreases dramatically in going from Sb to Bi. Compared to the lattice thermal conductivity of PbTe, that of AgPb18BiTe20 is substantially reduced. The lattice thermal conductivity of the Bi analog, however, is higher than that of AgPb18SbTe20 and this is attributed largely to the decrease in the degree of mass fluctuation between the nanostructures and the matrix (for the Bi analog). As a result the dimensionless figure of merit ZT of Ag1-xPb18MTe20 (M = Bi) is found to be smaller than that of Ag1-xPb18MTe20 (M = Sb).

Effects of Nb doping on thermoelectric properties of Zn4Sb3 at high temperatures

2009 ◽  
Vol 24 (2) ◽  
pp. 430-435 ◽  
Author(s):  
D. Li ◽  
H.H. Hng ◽  
J. Ma ◽  
X.Y. Qin
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperatures ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Temperature Range ◽  
A Value ◽  
Nb Doping ◽  
Thermal Conductivities

The thermoelectric properties of Nb-doped Zn4Sb3 compounds, (Zn1–xNbx)4Sb3 (x = 0, 0.005, and 0.01), were investigated at temperatures ranging from 300 to 685 K. The results showed that by substituting Zn with Nb, the thermal conductivities of all the Nb-doped compounds were lower than that of the pristine β-Zn4Sb3. Among the compounds studied, the lightly substituted (Zn0.995Nb0.005)4Sb3 compound exhibited the best thermoelectric performance due to the improvement in both its electrical resistivity and thermal conductivity. Its figure of merit, ZT, was greater than the undoped Zn4Sb3 compound for the temperature range investigated. In particular, the ZT of (Zn0.995Nb0.005)4Sb3 reached a value of 1.1 at 680 K, which was 69% greater than that of the undoped Zn4Sb3 obtained in this study.

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