scholarly journals ANTIHYPERON POLARIZATION IN HIGH-ENERGY INCLUSIVE PROCESSES

2008 ◽  
Vol 17 (02) ◽  
pp. 371-392 ◽  
Author(s):  
C. C. BARROS ◽  
Y. HAMA
Keyword(s):  
Chiral Lagrangians ◽  
High Energy ◽  
Low Energy ◽  
High Energy Proton ◽  
Final State ◽  
Energy Proton ◽  
Final State Interactions ◽  
Inclusive Processes

We propose a model for the antihyperon polarization in high-energy proton-nucleus inclusive reactions, based on the final-state interactions between the antihyperons and other produced particles (predominantly pions). To formulate this idea, we use the previously obtained low-energy pion-(anti-)hyperon interaction using effective chiral Lagrangians, and a hydrodynamic parametrization of the background matter, which expands and decouples at a certain freezeout temperature.1.

Final-state interactions in the high-energy proton-deuteron charge exchange reaction

1977 ◽  
Vol 3 (9) ◽  
pp. 1225-1240 ◽  
Author(s):  
B S Aladashvili ◽  
J -F Germond ◽  
V V Glagolev ◽  
M S Nioradze ◽  
T Siemiarczuk ◽  
...  
Keyword(s):  
Exchange Reaction ◽  
Charge Exchange ◽  
High Energy ◽  
High Energy Proton ◽  
Final State ◽  
Charge Exchange Reaction ◽  
Energy Proton ◽  
Final State Interactions

scholarly journals Influence of Orbital Parameters on SEU Rate of Low-Energy Proton in Nano-SRAM Device

Symmetry ◽  
2020 ◽  
Vol 12 (12) ◽  
pp. 2030
Author(s):  
Bing Ye ◽  
Li-Hua Mo ◽  
Tao Liu ◽  
You-Mei Sun ◽  
Jie Liu
Keyword(s):  
Heavy Ion ◽  
High Energy ◽  
Low Energy ◽  
Single Event Upset ◽  
Single Event ◽  
High Energy Proton ◽  
Orbital Parameters ◽  
Energy Proton ◽  
Orbital Height ◽  
Selection Of

The on-orbit single-event upset (SEU) rate of nanodevices is closely related to the orbital parameters. In this paper, the on-orbit SEU rate (OOSR) induced by a heavy ion (HI), high-energy proton (HEP) and low-energy proton (LEP) for a 65 nm SRAM device is calculated by using the software SPACE RADIATION under different orbits based on the experimental data. The results indicate that the OOSR induced by the HI, HEP and LEP varies with the orbital parameters. In particular, the orbital height, inclination and shieling thickness are the key parameters that affect the contribution of the LEP to the total OOSR. Our results provide guidance for the selection of nanodevices on different orbits.

Final-state interaction in the high-energy proton-deuteron break-up reaction

1977 ◽  
Vol 3 (1) ◽  
pp. 7-20 ◽  
Author(s):  
B S Aladashvili ◽  
J -F Germond ◽  
V V Glagolev ◽  
M S Nioradze ◽  
T Siemiarczuk ◽  
...  
Keyword(s):  
Final State Interaction ◽  
High Energy ◽  
State Interaction ◽  
High Energy Proton ◽  
Final State ◽  
Energy Proton ◽  
Break Up

Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability

2014 ◽  
Vol 778-780 ◽  
pp. 525-528 ◽  
Author(s):  
Matthieu Florentin ◽  
Mihaela Alexandru ◽  
Aurore Constant ◽  
Bernd Schmidt ◽  
José Millan ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Proton Irradiation ◽  
Electrical Response ◽  
Gate Oxide ◽  
High Energy ◽  
Low Energy ◽  
Electrical Characteristics ◽  
Proton Radiation ◽  
High Energy Proton ◽  
Energy Proton

The 4H-SiC MOSFET electrical response to 180 keV proton radiations at three different fluences has been evaluated. For a certain dose, the devices show an apparent improvement of their electrical characteristics likely due to the N and/or H atoms diffusion inside the oxide layer. This work complete our previous studies on high energy proton irradiation, showing that the 4H-SiC MOSFET is also robust to the low energy proton radiation, when the proton implanted range is located near the MOS interface.

scholarly journals Metastable Defects in Low-Energy Electron Irradiated n-Type 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 435-438 ◽  
Author(s):  
Franziska Christine Beyer ◽  
Carl G. Hemmingsson ◽  
Henrik Pedersen ◽  
Anne Henry ◽  
Junichi Isoya ◽  
...  
Keyword(s):  
Carbon Atom ◽  
Electron Irradiation ◽  
High Energy ◽  
Low Energy ◽  
Energy Electron ◽  
High Energy Proton ◽  
Energy Proton ◽  
Low Energy Electron

After low-energy electron irradiation of epitaxial n-type 4H-SiC, the DLTS peak amplitudes of the defects Z1/2 and EH6/7, which were already observed in as-grown layers, increased and the commonly found peaks EH1 and EH3 appeared. The bistable M-center, previously seen in high-energy proton implanted 4H-SiC, was detected. New bistable defects, the EB-centers, evolved after annealing out of the M-center, EH1 and EH3. The reconfiguration energies for one of the two EB-centers were determined to be about 0.96 eV for both transitions: from configuration I to II and from configuration II to I. Since low-energy electron irradiation (<220 keV) affects mainly the carbon atom in SiC, both the M- and EB-centers are likely to be carbon related defects.

Some characteristics of high energy proton–nucleus collisions

1978 ◽  
Vol 56 (2) ◽  
pp. 226-234 ◽  
Author(s):  
A. R. Khan ◽  
M. Irfan ◽  
M. Zafar ◽  
S. Ahmad ◽  
I. Ahmad ◽  
...  
Keyword(s):  
Nuclear Emulsion ◽  
High Energy ◽  
Low Energy ◽  
High Energy Proton ◽  
Emission Frequency ◽  
Energy Proton ◽  
The Mean ◽  
Fast Protons

The variation of emission frequency, f, of fast protons, deuterons, tritons, He-nuclei, and slow pions, produced in 24 GeV/c proton interactions with Ag and Br nuclei of nuclear emulsion with [Formula: see text], [Formula: see text], [Formula: see text], and [Formula: see text] has been investigated. For all the particles [Formula: see text] has been observed to increase linearly with [Formula: see text], [Formula: see text], and [Formula: see text]. The variation of [Formula: see text] with [Formula: see text] has been found to be linear for slow pions, protons, and deuterons, whereas it varies as [Formula: see text] in the case of tritons and He-nuclei. The frequency of slow pions has been determined to be ~(0.33 ± 0.04), which is ~ 7.8% of the mean number of grey tracks. Further, the emission of low energy pions has been observed to be more frequent in relatively heavier stars.

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