scholarly journals Influence of Orbital Parameters on SEU Rate of Low-Energy Proton in Nano-SRAM Device

Symmetry ◽  
2020 ◽  
Vol 12 (12) ◽  
pp. 2030
Author(s):  
Bing Ye ◽  
Li-Hua Mo ◽  
Tao Liu ◽  
You-Mei Sun ◽  
Jie Liu
Keyword(s):  
Heavy Ion ◽  
High Energy ◽  
Low Energy ◽  
Single Event Upset ◽  
Single Event ◽  
High Energy Proton ◽  
Orbital Parameters ◽  
Energy Proton ◽  
Orbital Height ◽  
Selection Of

The on-orbit single-event upset (SEU) rate of nanodevices is closely related to the orbital parameters. In this paper, the on-orbit SEU rate (OOSR) induced by a heavy ion (HI), high-energy proton (HEP) and low-energy proton (LEP) for a 65 nm SRAM device is calculated by using the software SPACE RADIATION under different orbits based on the experimental data. The results indicate that the OOSR induced by the HI, HEP and LEP varies with the orbital parameters. In particular, the orbital height, inclination and shieling thickness are the key parameters that affect the contribution of the LEP to the total OOSR. Our results provide guidance for the selection of nanodevices on different orbits.

High energy proton and heavy ion induced single event transient in 65-nm CMOS technology

2017 ◽  
Vol 60 (12) ◽  
Author(s):  
Jiaqi Liu ◽  
Yuanfu Zhao ◽  
Liang Wang ◽  
Dan Wang ◽  
Hongchao Zheng ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Heavy Ion ◽  
High Energy ◽  
Single Event ◽  
Single Event Transient ◽  
High Energy Proton ◽  
Energy Proton

Heavy Ion, High-Energy, and Low-Energy Proton SEE Sensitivity of 90-nm RHBD SRAMs

2010 ◽  
Author(s):  
E. H. Cannon ◽  
M. Cabanas-Holmen ◽  
J. Wert ◽  
T. Amort ◽  
R. Brees ◽  
...  
Keyword(s):  
Heavy Ion ◽  
High Energy ◽  
Low Energy ◽  
Energy Proton

Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM

2008 ◽  
Vol 55 (6) ◽  
pp. 3394-3400 ◽  
Author(s):  
David F. Heidel ◽  
Paul W. Marshall ◽  
Kenneth A. LaBel ◽  
James R. Schwank ◽  
Kenneth P. Rodbell ◽  
...  
Keyword(s):  
Low Energy ◽  
Test Results ◽  
Single Event Upset ◽  
Single Event ◽  
Energy Proton

Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability

2014 ◽  
Vol 778-780 ◽  
pp. 525-528 ◽  
Author(s):  
Matthieu Florentin ◽  
Mihaela Alexandru ◽  
Aurore Constant ◽  
Bernd Schmidt ◽  
José Millan ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Proton Irradiation ◽  
Electrical Response ◽  
Gate Oxide ◽  
High Energy ◽  
Low Energy ◽  
Electrical Characteristics ◽  
Proton Radiation ◽  
High Energy Proton ◽  
Energy Proton

The 4H-SiC MOSFET electrical response to 180 keV proton radiations at three different fluences has been evaluated. For a certain dose, the devices show an apparent improvement of their electrical characteristics likely due to the N and/or H atoms diffusion inside the oxide layer. This work complete our previous studies on high energy proton irradiation, showing that the 4H-SiC MOSFET is also robust to the low energy proton radiation, when the proton implanted range is located near the MOS interface.

Sign in / Sign up

Export Citation Format

Share Document