X-RAY DIFFRACTION FOR SURFACES AND BURIED INTERFACES

2000 ◽  
Vol 07 (04) ◽  
pp. 437-446 ◽  
Author(s):  
G. RENAUD

The application of X-rays to the structural characterization of surfaces and interfaces, in situ and in UHV, is discussed on selected examples. Grazing incidence X-ray diffraction is not only a very powerful technique for quantitatively investigating the atomic structure of surfaces and interfaces, but is also very useful for providing information on the interfacial registry for coherent interfaces or on the strain deformation, island and grain sizes for incoherent epilayers.

1990 ◽  
Author(s):  
R. Pinchaux ◽  
M. Sauvage-Simkin ◽  
J. Massies ◽  
N. Jedrecy ◽  
N. Greiser ◽  
...  

2021 ◽  
Vol 28 (3) ◽  
Author(s):  
Alan T. Landers ◽  
David M. Koshy ◽  
Soo Hong Lee ◽  
Walter S. Drisdell ◽  
Ryan C. Davis ◽  
...  

In situ characterization of electrochemical systems can provide deep insights into the structure of electrodes under applied potential. Grazing-incidence X-ray diffraction (GIXRD) is a particularly valuable tool owing to its ability to characterize the near-surface structure of electrodes through a layer of electrolyte, which is of paramount importance in surface-mediated processes such as catalysis and adsorption. Corrections for the refraction that occurs as an X-ray passes through an interface have been derived for a vacuum–material interface. In this work, a more general form of the refraction correction was developed which can be applied to buried interfaces, including liquid–solid interfaces. The correction is largest at incidence angles near the critical angle for the interface and decreases at angles larger and smaller than the critical angle. Effective optical constants are also introduced which can be used to calculate the critical angle for total external reflection at the interface. This correction is applied to GIXRD measurements of an aqueous electrolyte–Pd interface, demonstrating that the correction allows for the comparison of GIXRD measurements at multiple incidence angles. This work improves quantitative analysis of d-spacing values from GIXRD measurements of liquid–solid systems, facilitating the connection between electrochemical behavior and structure under in situ conditions.


2011 ◽  
Vol 56 (3) ◽  
pp. 1546-1553 ◽  
Author(s):  
Jean-Pierre Veder ◽  
Ayman Nafady ◽  
Graeme Clarke ◽  
Ross P. Williams ◽  
Roland De Marco ◽  
...  

Langmuir ◽  
2018 ◽  
Vol 34 (29) ◽  
pp. 8516-8521 ◽  
Author(s):  
Kazutaka Kamitani ◽  
Ayumi Hamada ◽  
Kazutoshi Yokomachi ◽  
Kakeru Ninomiya ◽  
Kiyu Uno ◽  
...  

2016 ◽  
Vol 18 (4) ◽  
pp. 2830-2839 ◽  
Author(s):  
Yvonne Soldo-Olivier ◽  
Maurizio De Santis ◽  
Wang Liang ◽  
Eric Sibert

Surface X-ray diffraction characterization of a Pd10ML/Au(111) film. A characteristic Pd rod with sharp Bragg-like peaks is observed, signature of 3D islands growth.


2005 ◽  
Vol 864 ◽  
Author(s):  
Chang-Soo Kim ◽  
Ji-Hyun Moon ◽  
Sang-Jun Lee ◽  
Sam-Kyu Noh ◽  
Je Won Kim ◽  
...  

AbstractThe structural properties of GaN epitaxial layers grown on patterned sapphire substrates by MOCVD have been investigated using HRXRD(high-resolution X-ray diffraction), GIXRD(grazing incidence X-ray diffraction) and PL(photoluminescence). For X-ray characterizations rocking curves for GaN (10·5), (00·2), (11·4) and (11·0) reflections for which incidence angles of X-rays are 32.0°, 17.3°, 11.0° and 0.34°, respectively, were measured. For (10·5), (00·2) and (11·4) reflections FWHMs of the rocking curves for a patterned substrate were broader than those for a unpatterned substrate, for (11·0) reflection, however, FWHM for a patterned substrate was much narrower than that for a unpatterned substrate. The normalized FWHM for all reflections decreases as the incidence angle of X-ray decreases. The results indicate that the crystalline quality in the surface region of the epilayer on a patterned substrate was especially improved because the penetration depth of X-ray depends on the incidence angle. The intensity of PL peak of the epilayer for a patterned substrate increased compared to that for a unpatterned substrate, and the increase in PL intensity is attributed to the reduction in dislocation density at the surface region revealed the by X-ray results.


1991 ◽  
Vol 237 ◽  
Author(s):  
E. Vlieg ◽  
H. A. Van Der Vegt

ABSTRACTX-ray diffraction has found an increasing use in the characterization of surface structures. Due to the high penetration depth of X-rays, the technique is also very suitable for the study of buried interfaces. We will give a general outline of the technique, and then discuss two examples concerning epitaxial growth.


1991 ◽  
Vol 239 ◽  
Author(s):  
B. M. Clemens ◽  
J-A. Bain ◽  
A. P. Payne ◽  
T. C. Hufnagel ◽  
S. M. Brennan

ABSTRACTStructural deviations from ideal layering of bulk constituents can have dramatic effects on the properties of multilayered materials. We discuss three examples of the use of x-ray diffraction in non-standard geometries to examine these effects. In Mo/Ni multilayers, we use asymmetric diffraction and grazing incidence x-ray scattering (GIXS) to deduce the strain and intermixing. We find that coherency stresses between the BCC Mo and FCC Ni planes play a major role. In the Fe/Cr system, we use rocking curves and asymmetric scans about the small angle superlattice lines to investigate the nature and extent of layer roughness. We find that conformai roughness dominates our best samples, while non-conformal roughness increases with sputter deposition pressure. In the Gd/Co system, we use in-situ GIXS to investigate amorphization reaction during deposition. We find a strong diffusional asymmetry and rapid reaction during growth.


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