EPITAXY OF ULTRATHIN CoO FILMS STUDIED BY XPD AND GIXRD

2002 ◽  
Vol 09 (02) ◽  
pp. 937-941 ◽  
Author(s):  
P. LUCHES ◽  
C. GIOVANARDI ◽  
T. MOIA ◽  
S. VALERI ◽  
F. BRUNO ◽  
...  

CoO layers have been grown by exposing to oxygen the (001) body-centered-tetragonal (bct) surface of a Co ultrathin film epitaxially grown on Fe(001). Different oxide thicknesses in the 2–15 ML range have been investigated by means of synchrotron-radiation-based techniques. X-ray photoelectron spectroscopy has been used to check the formation of the oxide films; X ray photoelectron diffraction has given information concerning the symmetry of their unit cell; grazing incidence X-ray diffraction has allowed to evaluate precisely their in-plane lattice constant. The films show a CoO(001) rocksalt structure, rotated by 45° with respect to the bct Co substrate, with the [100] direction parallel to the substrate [110] direction. Their in-plane lattice constant increases as a function of thickness, to release the in-plane strain due to the 3% mismatch between the bulk CoO phase and the underlying substrate.

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3191
Author(s):  
Arun Kumar Mukhopadhyay ◽  
Avishek Roy ◽  
Gourab Bhattacharjee ◽  
Sadhan Chandra Das ◽  
Abhijit Majumdar ◽  
...  

We report the surface stoichiometry of Tix-CuyNz thin film as a function of film depth. Films are deposited by high power impulse (HiPIMS) and DC magnetron sputtering (DCMS). The composition of Ti, Cu, and N in the deposited film is investigated by X-ray photoelectron spectroscopy (XPS). At a larger depth, the relative composition of Cu and Ti in the film is increased compared to the surface. The amount of adventitious carbon which is present on the film surface strongly decreases with film depth. Deposited films also contain a significant amount of oxygen whose origin is not fully clear. Grazing incidence X-ray diffraction (GIXD) shows a Cu3N phase on the surface, while transmission electron microscopy (TEM) indicates a polycrystalline structure and the presence of a Ti3CuN phase.


2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
Anna Majtyka ◽  
Anna Nowak ◽  
Benoît Marchand ◽  
Dariusz Chrobak ◽  
Mikko Ritala ◽  
...  

The present paper pertains to mechanical properties and structure of nanocrystalline multiferroic BeFiO3(BFO) thin films, grown by atomic layer deposition (ALD) on the Si/SiO2/Pt substrate. The usage of sharp-tip-nanoindentation and multiple techniques of structure examination, namely, grazing incidence X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, and energy dispersive X-ray spectrometry, enabled us to detect changes in elastic properties(95 GPa≤E≤118 GPa)and hardness(4.50 GPa≤H≤7.96 GPa)of BFO after stages of annealing and observe their relation to the material’s structural evolution. Our experiments point towards an increase in structural homogeneity of the samples annealed for a longer time. To our best knowledge, the present report constitutes the first disclosure of nanoindentation mechanical characteristics of ALD-fabricated BeFiO3, providing a new insight into the phenomena that accompany structure formation and development of nanocrystalline multiferroics. We believe that our systematic characterization of the BFO layers carried out at consecutive stages of their deposition provides pertinent information which is needed to control and optimize its ALD fabrication.


1989 ◽  
Vol 159 ◽  
Author(s):  
Koichi Akimoto ◽  
Jun'Ichiro Mizuki ◽  
Ichiro Hirosawa ◽  
Junji Matsui

ABSTRACTSurface superstructures (reconstructed structures) have been observed by many authors. However, it is not easy to confirm that a superstructure does exist at an interface between two solid layers. The present paper reports a direct observation, by a grazing incidence x-ray diffraction technique with use of synchrotron radiation, of superstructures at the interface. Firstly, the boron-induced R30° reconstruction at the Si interface has been investigated. At the a Si/Si(111) interface, boron atoms at 1/3 ML are substituted for silicon atoms, thus forming a R30° lattice. Even at the interface between a solid phase epitaxial Si(111) layer and a Si(111) substrate, the boron-induced R30° reconstruction has been also observed. Secondly, SiO2/Si(100)-2×l interfacial superstructures have been investigated. Interfacial superstructures have been only observed in the samples of which SiO2 layers have been deposited with a molecular beam deposition method. Finally, the interfaces of MOCVD-grown AIN/GaAs(100) have been shown to have 1×4 and 1×6 superstructures.


2007 ◽  
Vol 556-557 ◽  
pp. 533-536
Author(s):  
M. Silly ◽  
H. Enriquez ◽  
J. Roy ◽  
M. D'Angelo ◽  
P. Soukiassian ◽  
...  

In order to give experimental insights on the atomic structure of the Si atomic wires developing on the β-SiC(100) surface, we use synchrotron radiation-based x-ray diffraction at grazing incidence to study a network of such atomic lines in a 5x2 surface array. Our results lead to an accurate surface and sub-surface structure determination evidencing a structure in agreement with a two adlayer symmetric dimer reconstruction. This atomic structure is significantly different from the 3x2 surface structure, giving new insights on the Si atomic lines stability.


1992 ◽  
Vol 71 (10) ◽  
pp. 5212-5216 ◽  
Author(s):  
T. B. Wu ◽  
J. S. Chen ◽  
C. D. Chiang ◽  
Y. M. Pang ◽  
S. J. Yang

2012 ◽  
Vol 65 (3) ◽  
pp. 236 ◽  
Author(s):  
Jean-Pierre Veder ◽  
Ayman Nafady ◽  
Graeme Clarke ◽  
Roland De Marco ◽  
Alan M. Bond

The in situ electrocrystallization of zinc tetracyanoquinodimethane (TCNQ) has been explored using synchrotron radiation-grazing incidence X-ray diffraction (SR-GIXRD) at potentials in the region of the cyclic voltammetric peak where reduction of TCNQ to TCNQ– occurs at a Pt electrode in acetonitrile (0.1 M [NBu4][PF6]) solution containing Zn(NO3)2·6H2O. The in situ SR-GIXRD data along with ex situ IR and Raman spectroscopy results all confirmed the formation of the kinetically favoured phase of Zn[TCNQ]2(H2O)2 as the product.


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