scholarly journals Surface Stoichiometry and Depth Profile of Tix-CuyNz Thin Films Deposited by Magnetron Sputtering

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3191
Author(s):  
Arun Kumar Mukhopadhyay ◽  
Avishek Roy ◽  
Gourab Bhattacharjee ◽  
Sadhan Chandra Das ◽  
Abhijit Majumdar ◽  
...  

We report the surface stoichiometry of Tix-CuyNz thin film as a function of film depth. Films are deposited by high power impulse (HiPIMS) and DC magnetron sputtering (DCMS). The composition of Ti, Cu, and N in the deposited film is investigated by X-ray photoelectron spectroscopy (XPS). At a larger depth, the relative composition of Cu and Ti in the film is increased compared to the surface. The amount of adventitious carbon which is present on the film surface strongly decreases with film depth. Deposited films also contain a significant amount of oxygen whose origin is not fully clear. Grazing incidence X-ray diffraction (GIXD) shows a Cu3N phase on the surface, while transmission electron microscopy (TEM) indicates a polycrystalline structure and the presence of a Ti3CuN phase.

Materials ◽  
2019 ◽  
Vol 12 (1) ◽  
pp. 138
Author(s):  
Da Xu ◽  
Yafei Yuan ◽  
Huanfeng Zhu ◽  
Ling Cheng ◽  
Chunmin Liu ◽  
...  

Strontium titanate thin films were deposited on a silicon substrate by radio-frequency magnetron sputtering. The structural and optical properties of these films were characterized by X-ray diffraction, high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and spectroscopic ellipsometry, respectively. After annealing at 600–800 °C, the as-deposited films changed from amorphous to polycrystalline. It was found that an amorphous interfacial layer appeared between the SrTiO3 layer and Si substrate in each as-deposited film, which grew thicker after annealing. The optical parameters of the SrTiO3 film samples were acquired from ellipsometry spectra by fitting with a Lorentz oscillator model. Moreover, we found that the band gap energy of the samples diminished after thermal treatment.


1987 ◽  
Vol 94 ◽  
Author(s):  
David A. Smith ◽  
Armin Segmüller ◽  
A. R. Taranko

ABSTRACTOriented deposits are commonplace in vapor deposited films. The origins of this behavior are not always clear. Various bcc metals (Fe, Nb, Mo, Ta, Cr) have been deposited onto single crystal fcc substrates (Au, Ni, MgO, Si, NaCI) which were selected with the intention of varying the character of the substrate-deposit interaction. The resulting structures have been characterized by transmission electron microscopy and grazing incidence x-ray diffraction. The observed variants of the cube-cube and Nishiyama-Wassermann orientation relationship can be understood in terms of minimization of misfit except when there is a weak interaction between substrate and deposit.


Materials ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 425 ◽  
Author(s):  
Song Zhang ◽  
Tingting Wang ◽  
Ziyu Zhang ◽  
Jun Li ◽  
Rong Tu ◽  
...  

Direct-current magnetron sputtering (DCMS) was applied to prepare vanadium (V) films on Si substrate. The influence of substrate temperature (Ts) and target–substrate distance (Dt–s) on phase structure and surface morphology of V films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscope (AFM) and transmission electron microscopy (TEM). The results show that the crystallinity of the V films increases with increasing Ts and decreasing Dt–s. The film deposited at Ts = 400 °C and Dt–s = 60 mm exhibits the best crystallinity and <111> preferred orientation with a regular tetrahedral surface morphology. Oxidation behavior of the V thin films has also been studied by X-ray photoelectron spectroscopy (XPS).


2008 ◽  
Vol 373-374 ◽  
pp. 726-729
Author(s):  
Li Ge Wang ◽  
Guo Qing Li ◽  
Yuan Rong Hu ◽  
Wei Gou ◽  
Meng Shi

WO3 and Ti-doped WO3 electrochromic films were prepared by mid-frequency dual-target magnetron sputtering method. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscope (TEM) and spectrophotometer were used to characterize the structure, morphology, composition and transmittance properties of the films, respectively. The results show that this method is available to deposit WO3 and Ti-doped WO3 electrochromic films. The as-deposited films prepared at room temperature are amorphous and display good transmittance. The difference value of transmittance between the bleached and coloration states of WO3 film is above 60% at 633nm. Ti-doped WO3 films have smoother surface and smaller grains than undoped ones. Moreover, the crystalline temperature increases after doping titanium, because the titanium atoms influence the lattice distortion of the WO3 films. So it is more convenient for Li+ ions to inject into films and can enhance the response speed and stability of Ti-doped WO3 electrochromic films.


2012 ◽  
Vol 1439 ◽  
pp. 17-23
Author(s):  
Feng Shi ◽  
Chengshan Xue

AbstractGaN nanowires and nanorods have been successfully synthesized on Si (111) substrates by magnetron sputtering through ammoniating Ga2O3/Nb thin films and the effects of ammoniation temperatures on growth of GaN nanowires and nanorods were analyzed in detail. X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, high-resolution transmission electron microscopy, and photoluminescence spectra were carried out to characterize microstructures, morphologies, and optical properties of GaN samples. The results demonstrate that sample after ammoniation at 950 °C is single crystal GaN with hexagonal wurtzite structure and high crystalline quality, having the size of 30 - 80 nm in diameter. After ammoniation at 1000 °C, GaN nanorods appear with smooth and clean surface and more than 100 nm in diameter. The optical properties of GaN nanowires grown at 950 °C and nanorods grown at 1000 °C are best with strong emission intensities.


2013 ◽  
Vol 377 ◽  
pp. 227-231 ◽  
Author(s):  
Min Xu ◽  
Jie Bing Wang ◽  
Lin Li ◽  
Chun Hua Wu ◽  
Yin Zhong Zhao ◽  
...  

High quality VO2 films have been successfully deposited by pulsed magnetron sputtering. In the preparation of vanadium dioxide films, the stoichiometry, structure and orientation of vanadium dioxide can be influenced by the process parameters. In this study, sputtering power and oxygen partial and substrate temperature were controlled accurately during experiment. Between X-ray diffraction and X-ray photoelectron spectroscopy were used to analyze the composition, phase structure, crystalline and valence state of the film. Atomic force spectroscopy was used to identify the film surface morphology. Electrical transition characteristics were also measured by four probes. Thermal radiative property was measured on a Calorimetric Emissometer. These investigations reveal that VO2 films have high purity, monophase and the sharp variation of resistance of films from semiconductor to metal state at 293K~373K temperature. Thermal emissivity of VO2 films vary widely from 0.82 to 0.35, which can meet requirement of future space thermal design.


2013 ◽  
Vol 543 ◽  
pp. 277-280
Author(s):  
Marius Dobromir ◽  
Alina Vasilica Manole ◽  
Simina Rebegea ◽  
Radu Apetrei ◽  
Maria Neagu ◽  
...  

Rutile N-doped TiO2thin films were grown by RF magnetron sputtering on amorphous and crystalline substrates at room temperature. The surface elemental analysis, investigated by X-ray photoelectron spectroscopy indicated that the nitrogen content of the films could be adjusted up to values as high as 4.1 at.%. As demonstrated by the X-ray diffraction data, the as-deposited films (100 200 nm thick) showed no detectable crystalline structure, while after successive annealing in air for one hour at 400°C, 500°C and 600°C, the (110) rutile peaks occurred gradually as dominant features. The rutile phase in the films was confirmed by the band gap values of the deposited materials, which stabilized at 3.1 eV, for the thin films having 200 nm thicknesses.


Polymers ◽  
2021 ◽  
Vol 13 (4) ◽  
pp. 581
Author(s):  
Gajanan S. Ghodake ◽  
Surendra K. Shinde ◽  
Ganesh D. Saratale ◽  
Rijuta G. Saratale ◽  
Min Kim ◽  
...  

The utilization of waste-paper-biomass for extraction of important α-cellulose biopolymer, and modification of extracted α-cellulose for application in enzyme immobilization can be extremely vital for green circular bio-economy. Thus, in this study, α-cellulose fibers were super-magnetized (Fe3O4), grafted with chitosan (CTNs), and thiol (-SH) modified for laccase immobilization. The developed material was characterized by high-resolution transmission electron microscopy (HR-TEM), HR-TEM energy dispersive X-ray spectroscopy (HR-TEM-EDS), X-ray diffraction (XRD), vibrating sample magnetometer (VSM), X-ray photoelectron spectroscopy (XPS), and Fourier transform infrared spectroscopy (FT-IR) analyses. Laccase immobilized on α-Cellulose-Fe3O4-CTNs (α-Cellulose-Fe3O4-CTNs-Laccase) gave significant activity recovery (99.16%) and laccase loading potential (169.36 mg/g). The α-Cellulose-Fe3O4-CTNs-Laccase displayed excellent stabilities for temperature, pH, and storage time. The α-Cellulose-Fe3O4-CTNs-Laccase applied in repeated cycles shown remarkable consistency of activity retention for 10 cycles. After the 10th cycle, α-Cellulose-Fe3O4-CTNs possessed 80.65% relative activity. Furthermore, α-Cellulose-Fe3O4-CTNs-Laccase shown excellent degradation of pharmaceutical contaminant sulfamethoxazole (SMX). The SMX degradation by α-Cellulose-Fe3O4-CTNs-Laccase was found optimum at incubation time (20 h), pH (3), temperatures (30 °C), and shaking conditions (200 rpm). Finally, α-Cellulose-Fe3O4-CTNs-Laccase gave repeated degradation of SMX. Thus, this study presents a novel, waste-derived, highly capable, and super-magnetic nanocomposite for enzyme immobilization applications.


Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.


Membranes ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 373
Author(s):  
Wen-Yen Lin ◽  
Feng-Tsun Chien ◽  
Hsien-Chin Chiu ◽  
Jinn-Kong Sheu ◽  
Kuang-Po Hsueh

Zirconium-doped MgxZn1−xO (Zr-doped MZO) mixed-oxide films were investigated, and the temperature sensitivity of their electric and optical properties was characterized. Zr-doped MZO films were deposited through radio-frequency magnetron sputtering using a 4-inch ZnO/MgO/ZrO2 (75/20/5 wt%) target. Hall measurement, X-ray diffraction (XRD), transmittance, and X-ray photoelectron spectroscopy (XPS) data were obtained. The lowest sheet resistance, highest mobility, and highest concentration were 1.30 × 103 Ω/sq, 4.46 cm2/Vs, and 7.28 × 1019 cm−3, respectively. The XRD spectra of the as-grown and annealed Zr-doped MZO films contained MgxZn1−xO(002) and ZrO2(200) coupled with Mg(OH)2(101) at 34.49°, 34.88°, and 38.017°, respectively. The intensity of the XRD peak near 34.88° decreased with temperature because the films that segregated Zr4+ from ZrO2(200) increased. The absorption edges of the films were at approximately 348 nm under 80% transmittance because of the Mg content. XPS revealed that the amount of Zr4+ increased with the annealing temperature. Zr is a potentially promising double donor, providing up to two extra free electrons per ion when used in place of Zn2+.


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