THE APPLICATION OF PULSED LASER DEPOSITION IN PRODUCING BIOACTIVE CERAMIC FILMS

2005 ◽  
Vol 12 (03) ◽  
pp. 401-408 ◽  
Author(s):  
YAFAN ZHAO ◽  
CHUANZHONG CHEN ◽  
DIANGANG WANG
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Processing Parameters ◽  
Laser Wavelength ◽  
Laser Deposition ◽  
Future Application ◽  
Ceramic Films ◽  
Bioactive Ceramic

Pulsed laser deposition (PLD) is a relatively new technique for producing thin films. It presents unique advantages for the deposition of bioactive ceramics. The mechanism and characteristics of the technique PLD are introduced. Its applications and current research status in hydroxyapatite and bioglass thin films are reviewed. The effect of processing parameters of PLD, including atmosphere, substrate temperature, laser wavelength and target properties, on the structures and the properties of the hydroxyapatite film, is analyzed in detail. Future application trends are also analyzed.

The effects of substrate temperature and laser wavelength on the formation of carbon thin films by pulsed laser deposition

1999 ◽  
Vol 8 (2-5) ◽  
pp. 463-467 ◽  
Author(s):  
Tsuyoshi Yoshitake ◽  
Takashi Nishiyama ◽  
Hajime Aoki ◽  
Koji Suizu ◽  
Koji Takahashi ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Wavelength ◽  
Laser Deposition ◽  
Carbon Thin Films

Pulsed Laser Deposition of Low-Resistivity Indium Tin Oxide Thin Films at Low Substrate Temperature

1999 ◽  
Vol 38 (Part 1, No. 5A) ◽  
pp. 2710-2716 ◽  
Author(s):  
Frederick Ojo Adurodija ◽  
Hirokazu Izumi ◽  
Tsuguo Ishihara ◽  
Hideki Yoshioka ◽  
Hiroshi Matsui ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Films ◽  
Low Resistivity

Pulsed Laser Deposition of Bi4Ti3O12 Thin Films on Sapphire Substrates

1994 ◽  
Vol 361 ◽  
Author(s):  
William Jo ◽  
T.W. Noh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Narrow Range ◽  
Pulsed Laser ◽  
Growth Behavior ◽  
Laser Deposition ◽  
Sapphire Substrates ◽  
Deposition Parameters

ABSTRACTUsing pulsed laser deposition, Bi4Ti3O12 thin films were grown on (0001) and (1102) surfaces of Al2O3. Substrate temperature from 700 to 800 °C and oxygen pressure from 50 to 1000 mtorr were varied, and their effects on Bi4Ti3O12 film growth behavior was investigated. Only for a narrow range of deposition parameters, can highly oriented Bi4Ti3O12(104) films be grown on Al2O3(0001). Further, epitaxial BTO(004) films can be grown on Al2O3(1102). The growth behavior of preferential BTO film orientations can be explained in terms of atomic arrangements in the Bi4Ti3O12 and the Al2O3 planes.

INFLUENCE OF THE TECHNICAL PARAMETERS ON BIOACTIVE FILMS DEPOSITED BY PULSED LASER

2007 ◽  
Vol 14 (02) ◽  
pp. 283-291 ◽  
Author(s):  
YAFAN ZHAO ◽  
CHUANZHONG CHEN ◽  
MINGDA SONG ◽  
JIAN LIU
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Atmosphere Pressure ◽  
Technical Parameters ◽  
Novel Technique ◽  
Post Annealing

Pulsed laser deposition (PLD), which is a novel technique in producing thin films in the recent years, shows unique advantages for the deposition of bioactive films. Research states of the technical parameters of the pulsed laser deposited bioactive films, including substrate temperature, atmosphere pressure, energy density, wavelength, post-annealing, target, deposition rate, and thickness of the films, are systematically reviewed. Processing-microstructure-property relationships of bioactive films by pulsed laser deposition are discussed. The application prospect is pointed as well.

Highly Transparent and Low Resistivity Al-Doped ZnO Thin Films Grown by Pulsed Laser Deposition under Different Oxygen Flow Rates

2013 ◽  
Vol 662 ◽  
pp. 453-458
Author(s):  
Kyoo Ho Kim ◽  
Eun Soo Lee ◽  
Seong Heon Lee
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Flow Rate ◽  
Pulsed Laser ◽  
Oxygen Flow Rate ◽  
Laser Deposition ◽  
Oxygen Flow ◽  
Low Resistivity ◽  
Doped Zno

Polycrystalline Al-doped ZnO (AZO) thin films with a thickness of 1300 Å were grown on Corning 1737 glass by pulsed laser deposition (PLD) at a low substrate temperature. The presence of oxygen gas during deposition led to a remarkable enhancement of the (002) c-axis preferential orientation as well as increased crystallite size. Highly transparent films with a transmittance of 85% could be obtained by controlling the oxygen flow rate, while causing a Burstein-Moss shift toward a shorter wavelength as well. The resistivities of the films were found to be functions of both the oxygen flow rate and substrate temperature, with the lowest value being 2.3 x 10-4 Ωcm (18Ω/sq sheet resistance). It was found that both the oxygen flow rate and substrate temperature are crucial in order to grow superior device quality films with an appropriate degree of crystallinity, less surface roughness, high transmittance and low resistivity, which are characteristics of great technological importance.

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