Experimental and numerical study of pulsed laser ablation in vacuum and ambient gas: application to pulsed laser deposition of thin films

2000 ◽  
Author(s):  
Michel L. Autric ◽  
Tatiana Itina
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser Deposition ◽  
Numerical Study ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Laser Deposition ◽  
Ambient Gas

The Preparation of Partially Oriented Zeolite Thin Films via Pulsed Laser Ablation

2002 ◽  
Vol 752 ◽  
Author(s):  
Zhongsheng Deng ◽  
Thomas J. Pisklak ◽  
Kenneth J. Balkus
Keyword(s):  
Thin Films ◽  
Stainless Steel ◽  
Laser Ablation ◽  
Pulsed Laser Deposition ◽  
Hydrothermal Treatment ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Laser Deposition ◽  
Treatment Results ◽  
Stainless Steel Foil

ABSTRACTThin films of zeolites including silicalite-1, mordenite and UTD-18 have been prepared on stainless steel foil via pulsed laser deposition (PLD). Laser ablation of as-synthesized zeolite targets onto stainless steel foil followed by a post hydrothermal treatment results in partially oriented zeolite thin films. SEM, XRD were used to characterize the zeolite thin films. Preliminary results for multilayercoatings of different zeolites will also be presented.

Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Polarization Reversal ◽  
Ambient Gas ◽  
Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

Quantum Confinement of GaAs Nanocrystals Deposited on PMMA Microspheres Using Pulsed Laser Ablation

2013 ◽  
Vol 660 ◽  
pp. 3-9
Author(s):  
Jeong Ho Ryu ◽  
Soon Yong Kweon ◽  
Jung Il Lee ◽  
Sung Lim Ryu
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser Deposition ◽  
Quantum Confinement ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Average Diameter ◽  
Laser Deposition ◽  
Spherical Particles ◽  
Novel Approach

A modified pulsed laser deposition (PLD) was employed to deposit GaAs nanocrystals on the surface of PMMA microspheres. This novel approach is distinguished by the fact that laser ablated materials are deposited uniformly onto the surface of spherical particles that are held constantly in a particle fludization unit. The XRD, SEM, EDX, TEM, EDP and PL results confirmed that cubic structured GaAs nanocrystals were deposited uniformly on the surface of PMMA microspheres with an average diameter of about 15 nm.

THE TARGET MORPHOLOGY DURING PULSED LASER DEPOSITION OF HYDROXYAPATITE THIN FILMS

2005 ◽  
Vol 12 (04) ◽  
pp. 539-543 ◽  
Author(s):  
QUANHE BAO ◽  
CHUANZHONG CHEN ◽  
LUBIN CHEN ◽  
DIANGANG WANG ◽  
TINGQUAN LEI ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
The Other ◽  
Laser Deposition ◽  
Grain Structure ◽  
Before And After ◽  
Modified Surface ◽  
Modified Surface Layer

A modified surface layer of hydroxyapatite (HA) target was observed before and after pulsed laser deposition. Two types of HA targets were used for laser ablation. We observed that the surface morphology of the target has a very fine compacted grain structure and presents many irregularities with some microroughness and microporosity before laser ablation. The laser ablated regions can be divided into two areas: one area is porous and rough but the other is dense and smooth. The percentage of particles in the films was high for the films produced with targets that were sintered at 1200°C.

In vacuo Pulsed Laser Ablation of YBa2Cu3O7–x Target for the Formation of Y2O3 Nanostructures

2002 ◽  
Vol 17 (3) ◽  
pp. 697-700 ◽  
Author(s):  
D. B. Jan ◽  
Q. X. Jia ◽  
M. E. Hawley ◽  
G. W. Browne ◽  
C. J. Wetteland ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Three Dimensional ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Laser Deposition ◽  
Growth Surface ◽  
Planar Growth

The formation of superconducting YBa2Cu3O7–x (Y123) by in situ pulsed laser deposition from a stoichiometric Y123 target typically requires an oxygen-ambient environment (P ˜ 100–300-mtorr O2) and appropriate substrate temperature during deposition. We have found that pulsed laser deposition from a Y123 target in vacuo onto a (001) LaAlO3 substrate favors the formation of Y2O3. We observed that the Y2O3 (001) films yield three-dimensional nanoscale morphologies that are markedly different from the planar growth surface of conventional superconducting c-axis Y123 films and Y2O3 films formed from the pulsed laser ablation of a Y2O3 target.

Preparation of Line Patterned Mesoporous DAM-1 Thin Films via Pulsed Laser Deposition

2001 ◽  
Vol 704 ◽  
Author(s):  
Decio Coutinho ◽  
Kenneth J. Balkus
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Laser Printer ◽  
Transparent Film ◽  
Patterned Substrate ◽  
Mesoporous Film ◽  
Patterning Technique

AbstractPatterned mesoporous DAM-1 thin films were prepared on flexible transparent film utilizing the pulsed laser deposition and a line patterning technique. The patterned lines are transferred to the transparent film using a laser printer or copy machine. Laser ablation of DAM-1 onto the patterned substrate followed by a hydrothermal treatment resulted in a densely packed mesoporous film. Upon removal of the patterned lines (i.e. the underlying toner) by ultrasonic treatment in toluene, patterned DAM-1 films were produced.

Pulsed laser deposition of silicon nitride thin films by laser ablation of a Si target in low pressure ammonia

1996 ◽  
Vol 31 (11) ◽  
pp. 2839-2847 ◽  
Author(s):  
I. N. Mihailescu ◽  
Adriana Lita ◽  
V. S. Teodorescu ◽  
A. Luches ◽  
M. Martino ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Laser Ablation ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Low Pressure ◽  
Laser Deposition
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