CHARACTERISTIC SIGNIFICANCE OF MAGNETIC RELAXATIONS ON COPPER OXIDE THIN FILM USING THE BLOCH NMR

In this paper, a theoretical model was described to analyze the magnetic relaxations of samples of copper oxide thin film cells. Experimentally, the copper oxide thin film was characterized at different oxidation temperatures between 150°C to 450°C. The introduction of the Bloch NMR equations was developed to determine the functionality of the individual samples. The magnetic relaxation characterization confirmed the degree of disordered in the copper oxide sample. This disorderliness of the copper oxide sample engendered a magnetic instability which gave rise to magnetic deflagration. Magnetic deflagration was found to be dependent on the magnetic re-orientation initiated by the RF pulse. A new law was proposed which is a modification of the Arrhenius law.

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Photoelectrocatalytic improvement of copper oxide thin film fabricated using anodization strategy application in nitrite degradation and promoting oxygen evolution

Chemical Papers ◽

10.1007/s11696-020-01369-x ◽

2020 ◽

Author(s):

Chatchai Ponchio ◽

Wanasiri Srevarit

Keyword(s):

Thin Film ◽

Copper Oxide ◽

Oxygen Evolution ◽

Oxide Thin Film ◽

Copper Oxide Thin Film

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Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication

Jurnal Teknologi ◽

10.11113/jt.v73.2984 ◽

2015 ◽

Vol 73 (1) ◽

Cited By ~ 1

Author(s):

Jia Wei Low ◽

Nafarizal Nayan ◽

Mohd Zainizan Sahdan ◽

Mohd Khairul Ahmad ◽

Ali Yeon Md Shakaff ◽

...

Keyword(s):

Thin Film ◽

Copper Oxide ◽

Flow Rate ◽

Langmuir Probe ◽

Oxygen Flow Rate ◽

Oxygen Flow ◽

Oxide Thin Film ◽

Substrate Bias ◽

Substrate Bias Voltage ◽

Copper Oxide Thin Film

Magnetron sputtering plasma for the deposition of copper oxide thin film has been investigated using optical emission spectroscopy and Langmuir probe. The intensity of the light emission from atoms and radicals in the plasma were measured using optical emission spectroscopy (OES). Then, Langmuir probe was employed to estimate the plasma density, electron temperature and ion flux. In present studies, reactive copper sputtering plasmas were produced at different oxygen flow rate of 0, 4, 8 and 16 sccm. The size of copper target was 3 inches. The dissipation rf power, Ar flow rate and working pressure were fixed at 400 W, 50 sccm and 22.5 mTorr, respectively. Since the substrate bias plays an important role to the thin film formation, the substrate bias voltages of 0, -40, -60 and -100 V were studied. Based on OES results, oxygen emission increased drastically when the oxygen flow rate above 8 sccm. On the other hand, copper and argon emission decreased gradually. In addition, Langmuir probe results showed a different ion flux when substrate bias voltage was applied. Based on these plasma diagnostic results, it has been concluded that the optimized parameter to produce copper oxide thin film are between -40 to -60 V of substrate bias voltage and between 8 to 12 sccm of oxygen flow rate.

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