Picosecond nonlinear refraction of C2H4Cl2 and C2H4Br2 at 532nm studied with Z-scan technique

2018 ◽  
Vol 27 (02) ◽  
pp. 1850015
Author(s):  
Yu-Ting Kuo ◽  
Po-Yuan Huang ◽  
Yi-Ci Li ◽  
Jaw-Luen Tang ◽  
Tai-Huei Wei
Keyword(s):  
Refractive Index ◽  
Electric Field ◽  
Nonlinear Refractive Index ◽  
Kerr Effect ◽  
Nonlinear Response ◽  
Nonlinear Refraction ◽  
Molecular Motions ◽  
Time Resolved ◽  
Picosecond Pulses

We investigated optical nonlinear refraction (NLR) of C2H4Cl2 and C2H4Br2 using the [Formula: see text]-scan technique with 532[Formula: see text]nm 17 picosecond pulses delivered at 10[Formula: see text]Hz. We found that the latter shows larger positive Kerr nonlinear refractive index than the former, [Formula: see text][Formula: see text]cm2/W versus [Formula: see text][Formula: see text]cm2/W. According to our additional study on time-resolved Raman-induced Kerr effect, this observed trend is ascribed to stronger inter-molecular motions of diffusive reorientation and polarizability distortion in C2H4Br2 than in C2H4Cl2. This study helps to understand the nonlinear response of molecular motions to electric-field in great details which have not been well-defined previously.

scholarly journals The Influence of Quantum Confinement on Third-Order Nonlinearities in Porous Silicon Thin Films

2018 ◽  
Vol 8 (10) ◽  
pp. 1810 ◽  
Author(s):  
Rihan Wu ◽  
Jack Collins ◽  
Leigh Canham ◽  
Andrey Kaplan
Keyword(s):  
Refractive Index ◽  
Nonlinear Refractive Index ◽  
Quantum Confinement ◽  
Nonlinear Refraction ◽  
Photon Absorption ◽  
Third Order ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Silicon Thin Films ◽  
Gaussian Decomposition

We present an experimental investigation into the third-order nonlinearity of conventional crystalline (c-Si) and porous (p-Si) silicon with Z-scan technique at 800-nm and 2.4- μ m wavelengths. The Gaussian decomposition method is applied to extract the nonlinear refractive index, n 2 , and the two-photon absorption (TPA) coefficient, β , from the experimental results. The nonlinear refractive index obtained for c-Si is 7 ± 2 × 10 − 6 cm 2 /GW and for p-Si is − 9 ± 3 × 10 − 5 cm 2 /GW. The TPA coefficient was found to be 2.9 ± 0.9 cm/GW and 1.0 ± 0.3 cm/GW for c-Si and p-Si, respectively. We show an enhancement of the nonlinear refraction and a suppression of TPA in p-Si in comparison to c-Si, and the enhancement gets stronger as the wavelength increases.

Solitons in fiber Bragg gratings with cubic–quartic dispersive reflectivity having Kerr law of nonlinear refractive index

2021 ◽  
pp. 2050011
Author(s):  
Elsayed M. E. Zayed ◽  
Mohamed E. M. Alngar ◽  
Anjan Biswas ◽  
Mehmet Ekici ◽  
Abdullah Khamis Alzahrani ◽  
...  
Keyword(s):  
Refractive Index ◽  
Nonlinear Refractive Index ◽  
Kerr Effect ◽  
Chromatic Dispersion ◽  
Fiber Bragg Gratings ◽  
Soliton Solutions ◽  
Auxiliary Equation ◽  
Equation Approach ◽  
Complete Spectrum ◽  
Kerr Law

This paper retrieves soliton solutions to fiber Bragg ratings with dispersive reflectivity where cubic–quartic dispersive effects are considered as opposed to the usual chromatic dispersion. The auxiliary equation approach and an addendum to Kudryashov’s scheme display a complete spectrum of soliton forms to the model that is studied with Kerr effect.

Nonlinear refractive index change and optical rectification in a GaN-based step quantum wells with strong built-in electric field

2015 ◽  
Vol 29 (05) ◽  
pp. 1550024 ◽  
Author(s):  
Li Zhang
Keyword(s):  
Refractive Index ◽  
Electric Field ◽  
Quantum Wells ◽  
Nonlinear Refractive Index ◽  
Structural Parameters ◽  
Refractive Index Change ◽  
Blue Shift ◽  
Optical Rectification ◽  
Airy Functions ◽  
Index Change

Based on the compact density matrix approach, the linear and nonlinear refractive index change (RIC) and optical rectification (OR) coefficients in a GaN -based step QW with strong built-in electric field (BEF) have been theoretically deduced and investigated in detail. The analytical electronic state is derived by the two airy functions. And the band nonparabolicity is taken into account by using an energy dependence effective mass (EDEM) method. Numerical calculations on a four-layer AlN / GaN / Al x Ga 1-x N / AlN step QW are performed, and the curves for the geometric factors, the linear, the nonlinear, the total RICs and the OR coefficients as functions of the structural parameters of the step QW are discussed. The features for these curves were specified and reasons for the features were explained reasonably. It is found that the decreasing of well width Lw, and step barrier width Lb and the doped concentration x in step barrier will result in the significant enhancement of the RICs. With the decrease of Lw, Lb and x, the resonant photon energies of RIC and OR coefficients have obvious blue-shift. Moreover, the RIC and OR coefficients behave different dependence on the structural parameters of the GaN -based step QWs. The profound physical reasons are also analyzed.

Time-resolved study electronic and thermal contributions to the nonlinear refractive index of Nd3+:SBN laser crystals

2008 ◽  
Vol 128 (5-6) ◽  
pp. 1013-1015 ◽  
Author(s):  
L.R. Freitas ◽  
C. Jacinto ◽  
A. Ródenas ◽  
D. Jaque ◽  
T. Catunda
Keyword(s):  
Refractive Index ◽  
Nonlinear Refractive Index ◽  
Time Resolved ◽  
Laser Crystals
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