EFFECT OF VERTICAL MECHANICAL COMPRESSION ON THE RESISTIVE SWITCHING CURRENTS OF TITANIUM DIOXIDE THIN FILMS

2012 ◽  
Vol 11 (04) ◽  
pp. 1240025
Author(s):  
MATHIEU MORETTI ◽  
MISCHA NICKLAUS ◽  
CHRISTIAN NAUENHEIM ◽  
ANDREAS RUEDIGER
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Switching Behavior ◽  
Mechanical Compression ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
External Bias ◽  
Atomic Force ◽  
Titanium Dioxide Thin Films ◽  
Probe Investigation

We report on a scanning probe investigation of the resistive switching behavior of TiO2 thin films as a function of an external bias voltage. Our initial conductive atomic force microscopy scans (c-AFM) on 30 nm thick films of sputtered TiO2 confirm the Ron–Roff ratio of approximately 4:1 reported in literature. After a tapping mode scan that compacts this layer by approximately 3%, a subsequent c-AFM scan reveals that the resistance in the compacted region has increased by a factor of 40 while the Ron–Roff ratio is only affected for small bias voltages.

scholarly journals Understanding the Resistive Switching Phenomena of Stacked Al/Al2O3/Al Thin Films from the Dynamics of Conductive Filaments

Complexity ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-10 ◽  
Author(s):  
Joel Molina-Reyes ◽  
Luis Hernandez-Martinez
Keyword(s):  
Resistive Switching ◽  
Atomic Layer ◽  
Memory Device ◽  
Switching Behavior ◽  
Processing Temperature ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Deposition ◽  
Metal Insulator Metal ◽  
Switching Characteristics

We present the resistive switching characteristics of Metal-Insulator-Metal (MIM) devices based on amorphous Al2O3 which is deposited by Atomic Layer Deposition (ALD). A maximum processing temperature for this memory device is 300°C, making it ideal for Back-End-of-Line (BEOL) processing. Although some variations in the forming, set, and reset voltages (VFORM, VSET, and VRESET) are obtained for many of the measured MIM devices (mainly due to roughness variations of the MIM interfaces as observed after atomic-force microscopy analysis), the memristor effect has been obtained after cyclic I-V measurements. These resistive transitions in the metal oxide occur for both bipolar and unipolar conditions, while the IOFF/ION ratio is around 4–6 orders of magnitude and is formed at gate voltages of Vg<4 V. In unipolar mode, a gradual reduction in VSET is observed and is related to combined (a) incomplete dissolution of conductive filaments (made of oxygen vacancies and metal ions) which leaves some residuals and (b) thickening of chemically reduced Al2O3 during localized Joule heating. This is important because, by analyzing the macroscopic resistive switching behavior of this MIM structure, we could indirectly relate it to microscopic and/or nanoscopic phenomena responsible for the physical mechanism upon which most of these devices operate.

Microscopic Characterizations of Nanostructured Silicon Thin Films for Solar Cells

2011 ◽  
Vol 1321 ◽  
Author(s):  
Antonín Fejfar ◽  
Petr Klapetek ◽  
Jakub Zlámal ◽  
Aliaksei Vetushka ◽  
Martin Ledinský ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Maxwell Equations ◽  
Amorphous Matrix ◽  
Optical Power ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Silicon Thin Films ◽  
Atomic Force

ABSTRACTMicroscopic characterization of mixed phase silicon thin films by conductive atomic force microscopy (C-AFM) was used to study the structure composed of conical microcrystalline grains dispersed in amorphous matrix. C-AFM experiments were interpreted using simulations of electric field and current distributions. Density of absorbed optical power was calculated by numerically solving the Maxwell equations. The goal of this study is to combine both models in order to simulate local photoconductivity for understanding the charge photogeneration and collection in nanostructured solar cells.

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