scholarly journals Understanding the Resistive Switching Phenomena of Stacked Al/Al2O3/Al Thin Films from the Dynamics of Conductive Filaments

Complexity ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-10 ◽  
Author(s):  
Joel Molina-Reyes ◽  
Luis Hernandez-Martinez
Keyword(s):  
Resistive Switching ◽  
Atomic Layer ◽  
Memory Device ◽  
Switching Behavior ◽  
Processing Temperature ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Deposition ◽  
Metal Insulator Metal ◽  
Switching Characteristics

We present the resistive switching characteristics of Metal-Insulator-Metal (MIM) devices based on amorphous Al2O3 which is deposited by Atomic Layer Deposition (ALD). A maximum processing temperature for this memory device is 300°C, making it ideal for Back-End-of-Line (BEOL) processing. Although some variations in the forming, set, and reset voltages (VFORM, VSET, and VRESET) are obtained for many of the measured MIM devices (mainly due to roughness variations of the MIM interfaces as observed after atomic-force microscopy analysis), the memristor effect has been obtained after cyclic I-V measurements. These resistive transitions in the metal oxide occur for both bipolar and unipolar conditions, while the IOFF/ION ratio is around 4–6 orders of magnitude and is formed at gate voltages of Vg<4 V. In unipolar mode, a gradual reduction in VSET is observed and is related to combined (a) incomplete dissolution of conductive filaments (made of oxygen vacancies and metal ions) which leaves some residuals and (b) thickening of chemically reduced Al2O3 during localized Joule heating. This is important because, by analyzing the macroscopic resistive switching behavior of this MIM structure, we could indirectly relate it to microscopic and/or nanoscopic phenomena responsible for the physical mechanism upon which most of these devices operate.

scholarly journals Effects of Oxygen Precursor on Resistive Switching Properties of CMOS Compatible HfO2-Based RRAM

Metals ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1350
Author(s):  
Hojeong Ryu ◽  
Sungjun Kim
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Surface Characteristics ◽  
Atomic Layer ◽  
Resistive Random Access Memory ◽  
Hfo2 Film ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Deposition ◽  
Current Voltage

In this work, we investigate the resistive switching behaviors of HfO2-based resistive random-access memory (RRAM) in two different oxidants (H2O and O3) in an atomic layer deposition system. Firstly, the surface characteristics of the Ni/HfO2/Si stack are conducted by atomic force microscopy (AFM). A similar thickness is confirmed by scanning electron microscope (SEM) imaging. The surface roughness of the HfO2 film by O3 (O3 sample) is smoother than in the sample by H2O (H2O sample). Next, we conduct electrical characteristics by current–voltage (I–V) and capacitor–voltage (C–V) curves in an initial process. The forming voltage of the H2O sample is smaller than that of the O3 sample because the H2O sample incorporates a lot of H+ in the film. Additionally, the smaller capacitor value of the H2O sample is obtained due to the higher interface trap in H2O sample. Finally, we compare the resistive switching behaviors of both samples by DC sweep. The H2O sample has more increased endurance, with a smaller on/off ratio than the O3 sample. Both have good non-volatile properties, which is verified by the retention test.

Fabrication and Characterization of Transparent ZnO Film Based Resistive Switching Devices

2014 ◽  
Vol 609-610 ◽  
pp. 565-570 ◽  
Author(s):  
Hong Xia Li ◽  
Dong Dong Shen ◽  
Wei Qing Ke ◽  
Jun Hua Xi ◽  
Zhe Kong ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Visible Region ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Force Microscopy ◽  
Conductive Glass ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Sweeping Method ◽  
Switching Characteristics

In this paper, ZnO thin films were prepared on ITO conductive glass by direct current magnetron sputtering and the Cu electrodes were evaporated on ZnO/ITO by electric beam evaporation to get transparent Cu/ZnO/ITO resistive random access memory. The crystal structure and surface morphology were investigated by X-ray diffraction and atomic force microscopy, respectively. The transmittance spectra of ZnO/ITO in the visible region were measured by UV-VIS spectroscopy. The resistive switching characteristics of the fabricated devices were investigated by the voltage sweeping method, which showed that the transparent Cu/ZnO/ITO device had good resistive switching characteristics.

scholarly journals PEALD grown high-k ZrO-=SUB=-2-=/SUB=- thin films on SiC group IV compound semiconductor

2017 ◽  
Vol 51 (1) ◽  
pp. 133
Author(s):  
Anil G. Khairnar ◽  
Vilas S. Patil ◽  
K.S. Agrawal ◽  
Prerna A. Pandit ◽  
Rahul S. Salunke ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
High Mobility ◽  
Atomic Layer ◽  
Compound Semiconductor ◽  
Group Iv ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Deposition ◽  
High K

The study of ZrO2 thin films on SiC group IV compound semiconductor has been studied as a high mobility substrates. The ZrO2 thin films were deposited using the Plasma Enhanced Atomic Layer Deposition System. The thickness of the thin films were measured using ellipsometer and found to be 5.47 nm. The deposited ZrO2 thin films were post deposited annealed in rapid thermal annealing chamber at temperature of 400oC. The atomic force microscopy and x-ray photoelectron spectroscopy has been carried out to study the surface topography and roughness and chemical composition of thin film respectively. DOI: 10.21883/FTP.2017.01.8125

Resistance Switching Characteristics of HfO2 Film with Electrode for Resistance Change Random Access Memory

2007 ◽  
Vol 7 (11) ◽  
pp. 4139-4142 ◽  
Author(s):  
In-Sung Park ◽  
Joo-Ho Lee ◽  
Sunwoo Lee ◽  
Jinho Ahn
Keyword(s):  
Random Access ◽  
Atomic Layer ◽  
Resistance Switching ◽  
Dynamic Resistance ◽  
Access Memory ◽  
Hfo2 Film ◽  
Resistance Change ◽  
Layer Deposition ◽  
Metal Insulator Metal ◽  
Switching Characteristics

The electrode dependent resistance switching behaviors of amorphous HfO2 films grown by atomic layer deposition were systematically investigated. The low and high resistance states were successfully achieved for all the metal-insulator-metal resistor systems with Mo, Ru, and Pt symmetric electrodes. The characteristic reset and set voltages as well as the dynamic resistance ratio of the resistor device are strongly dependent on the electrode material with different work function. In addition, the different features for switching voltages with electrode are shown with annealing temperature.

EFFECT OF VERTICAL MECHANICAL COMPRESSION ON THE RESISTIVE SWITCHING CURRENTS OF TITANIUM DIOXIDE THIN FILMS

2012 ◽  
Vol 11 (04) ◽  
pp. 1240025
Author(s):  
MATHIEU MORETTI ◽  
MISCHA NICKLAUS ◽  
CHRISTIAN NAUENHEIM ◽  
ANDREAS RUEDIGER
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Switching Behavior ◽  
Mechanical Compression ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
External Bias ◽  
Atomic Force ◽  
Titanium Dioxide Thin Films ◽  
Probe Investigation

We report on a scanning probe investigation of the resistive switching behavior of TiO2 thin films as a function of an external bias voltage. Our initial conductive atomic force microscopy scans (c-AFM) on 30 nm thick films of sputtered TiO2 confirm the Ron–Roff ratio of approximately 4:1 reported in literature. After a tapping mode scan that compacts this layer by approximately 3%, a subsequent c-AFM scan reveals that the resistance in the compacted region has increased by a factor of 40 while the Ron–Roff ratio is only affected for small bias voltages.

scholarly journals Исследование ультратонких сверхпроводящих пленок нитрида ниобия, полученных методом атомно-слоевого осаждения

2021 ◽  
Vol 91 (4) ◽  
pp. 672
Author(s):  
М.В. Шибалов ◽  
Н.В. Порохов ◽  
А.М. Мумляков ◽  
И.В. Трофимов ◽  
Г.Д. Дюдьбин ◽  
...  
Keyword(s):  
Transition Temperature ◽  
Sheet Resistance ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Organic Precursor ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Deposition ◽  
Metal Organic ◽  
Ar Gas

This publication presents a method for deposition of ultrathin superconducting NbNx films by atomic layer deposition enhanced by plasma with metal-organic precursor and a gas mixture of H2/Ar used as reactant. The obtained films characterized by measuring of sheet resistance, ellipsometry, atomic force microscopy, and superconducting characteristics measurements. The optimal parameters of the H2/Ar gas ratio was defined at which sheet resistance of NbNx films was minimal. A comparative analysis of sheet resistance of the obtained NbNx films performed. The dependence of the transition temperature to the superconducting state on the film thickness investigated. The transition temperature of 13.7 K and the critical current density of 0.7 MA/cm2 achieved. High film uniformity, precision control of the thickness and deposition temperature of 350°C makes it possible to use these films in the manufacture of field effect transistors and in functional devices for various purposes, working on the superconductivity effect.

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