First-principles study on electronic structure and optical properties of In-doped GaN

2014 ◽  
Vol 13 (08) ◽  
pp. 1450070 ◽  
Author(s):  
Xingxiang Ruan ◽  
Fuchun Zhang ◽  
Weihu Zhang
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
First Principles ◽  
Density Functional ◽  
Visible Region ◽  
Solar Spectrum ◽  
Potential Method ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
Structure Density

The In -doped GaN is investigated by first-principles calculations of plane wave ultra-soft pseudo-potential method based on the density functional theory (DFT). The band structure, electronic structure, density of states and optical properties are investigated. The results indicate that the band-gap becomes narrower and the absorption edge of optical properties is red-shifted with the increase in In -doped concentration. Meanwhile, the visible region has strong absorption properties, and the significant absorption peaks are observed near 3.0 eV and 6.1 eV. The other peaks correspond to the wavelength of absorption spectra from the ultraviolet portion extending to the infrared portion, which almost covers the entire solar spectrum. The studied results show that In -doped GaN can be applied as solar cell and transparent conductivity material.

Electronic Structure and Optical Properties of InN: A First-Principles Study

2013 ◽  
Vol 760-762 ◽  
pp. 425-428
Author(s):  
Wei Hua Wang ◽  
Guo Zhong Zhao
Keyword(s):  
Optical Properties ◽  
First Principles ◽  
Density Functional ◽  
Potential Method ◽  
First Principles Calculations ◽  
Generalized Gradient ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
Structure Density ◽  
Pseudo Potential

The electronic properties and the optical properties of wurtzite InN are studied by the first-principles calculations based on the density functional theory. The calculations are based on the Generalized-Gradient Approximation (GGA) and implemented in Plane Wave Self-Consist Field (PWSCF). The optical properties of InN are investigated by the pseudo-potential method with PBEsol-GGA within the WIEN2K program. Band structure, density of states and dielectric functions are calculated detailedly. The energy transitions are observed and compared existing data at critical points. Moreover the new peak in between the region 12 eV to 14 eV should be due to transitions from the In-5p states to the N-2s states.

First Principles Calculations of Electronic Structure and Optical Properties of Cu-Doped SnS2

2013 ◽  
Vol 373-375 ◽  
pp. 1965-1969
Author(s):  
Kun Nan Qin ◽  
Ling Zhi Zhao ◽  
Yong Mei Liu ◽  
Fang Fang Li ◽  
Chao Yang Cui
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
First Principles ◽  
Density Functional ◽  
Optical Absorption Coefficient ◽  
Impurity Level ◽  
First Principles Calculations ◽  
Absorption Region ◽  
Functional Theory ◽  
The Density Functional Theory

The electronic structure and optical properties of Cu-doped SnS2with Sn-substituted content of 0, 12.5 and 37.5 at.% were successfully calculated by the first principles plane-wave pseudopotentials based on the density functional theory. It is found that the intermediate belts appear near the Fermi level and the energy band gap becomes narrower after the doping of the Cu atoms. The absorption peaks show a remarkable redshift and the absorption region broadens relatively after introducing acceptor impurity level. When Sn atoms of 37.5 at% were substituted by Cu, the optical absorption coefficient is significantly improved in the frequency range below 5.58 eV and over 8.13 eV.

Investigations of the Optical Properties of LaNi5 and LaNi4.5Sn0.5

2013 ◽  
Vol 321-324 ◽  
pp. 495-498 ◽  
Author(s):  
Dong Chen ◽  
Chao Xu
Keyword(s):  
Experimental Data ◽  
Refractive Index ◽  
Optical Properties ◽  
Density Functional ◽  
Low Frequency ◽  
Potential Method ◽  
Frequency Region ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
Pseudo Potential

The reflectivity, loss function, refractive index, extinction coefficient and dielectric function of the LaNi5and LaNi4.5Sn0.5intermetallic compounds are investigated through the plane-wave pseudo-potential method based on the density functional theory. The effects of Sn impurity are discussed and some interesting features are found in the low frequency region. Some important optical properties such as static dielectric constant and static refractive index are obtained. The equation [n (0)]2=ε1(0)is satisfied according to our calculation, which indicates that our results are correct and reasonable. Nevertheless, the calculated results need to be testified in the future due to the lack of experimental data.

scholarly journals Oxygen vacancy and doping atom effect on electronic structure and optical properties of Cd2SnO4

RSC Advances ◽  
2018 ◽  
Vol 8 (2) ◽  
pp. 640-646 ◽  
Author(s):  
Mei Tang ◽  
JiaXiang Shang ◽  
Yue Zhang
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Oxygen Vacancy ◽  
Density Functional ◽  
Generalized Gradient ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
La Doped ◽  
Doping Atom ◽  
Atom Effect

The electronic structure and optical properties of oxygen vacancy and La-doped Cd2SnO4 were calculated using the plane-wave-based pseudopotential method based on the density functional theory (DFT) within the generalized gradient approximation (GGA).

Study on Electronic Structure of GaN under Pressure

2014 ◽  
Vol 900 ◽  
pp. 217-221
Author(s):  
Xing Xiang Ruan ◽  
Xian Hui Zhong ◽  
Fu Chun Zhang ◽  
Wei Hu Zhang
Keyword(s):  
Electronic Structure ◽  
Density Functional ◽  
Energy Gap ◽  
Potential Method ◽  
High Energy ◽  
Functional Theory ◽  
Conduction Bands ◽  
The Density Functional Theory ◽  
The Relationship ◽  
Pseudo Potential

A detailed theoretical study of electronic structure and optical properties of GaN under pressure was performed by the first-principles calculations of plane wave ultra-soft pseudo-potential method based on the density functional theory (DFT). The results indicate that Ga-N bond length becomes shorter and the valence bonds shift towards the low energy while the conduction bands towards high energy, the band gap becomes wider with the pressure increasing, and theoretical studies explained the relationship between the band edges, energy gap of GaN and pressure. In addition, the peak in band was cracked slightly, and the Ga 3d-N 2p hybridization was enhanced.

First-principles calculations of the structural, elastic, mechanical, electronic and optical properties of monoclinic Hf4CuSi4

2020 ◽  
Vol 34 (06) ◽  
pp. 2050035
Author(s):  
Xia Xu ◽  
Wei Zeng ◽  
Fu-Sheng Liu ◽  
Zheng-Tang Liu ◽  
Qi-Jun Liu
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
First Principles ◽  
Density Functional ◽  
Mechanical Stability ◽  
Elastic Anisotropy ◽  
Structural Parameters ◽  
Functional Theory ◽  
Text Structures ◽  
Structure Density

In this paper, the structural, electronic, elastic, mechanical and optical properties of monoclinic [Formula: see text] are studied using the first-principles density functional theory (DFT). The calculated structural parameters are consistent with the experimental data. The elastic constants of [Formula: see text] structures are calculated, indicating that [Formula: see text] shows mechanical stability and elastic anisotropy. According to the [Formula: see text] and Poisson’s ratio, monoclinic [Formula: see text] shows a brittle manner. The energy band structure, density of states, charge transfers and bond populations are given. And the band structure shows that the material is a metal conductor. Moreover, the optical properties and optical anisotropy of [Formula: see text] are shown and analyzed.

scholarly journals DFT Calculation on the Electronic Structure and Optical Properties of InxGa1-xN Alloy Semiconductors

2019 ◽  
Vol 26 (2) ◽  
pp. 127-132
Author(s):  
Xuewen WANG ◽  
Wenwen LIU ◽  
Chunxue ZHAI ◽  
Jiangni YUN ◽  
Zhiyong ZHANG
Keyword(s):  
Optical Properties ◽  
Absorption Spectrum ◽  
Electronic Structure ◽  
Density Functional ◽  
Dft Calculation ◽  
Generalized Gradient ◽  
Functional Theory ◽  
Photoelectric Performance ◽  
The Density Functional Theory ◽  
Alloy Semiconductors

Using the density functional theory (DFT) of the first principle and Generalized gradient approximation method, the electronic structures and optical properties of the InxGa1-xN crystals with different x (x = 0.25, 0.5, 0.75, 1) have been calculated in this paper. The influence of the electronic structure on the properties has been analyzed. Then the influence of doping quantity on the characteristics has been summarized, which also indicates the trend of complex dielectric function, absorption spectrum and transitivity. With the increase of x, the computational result shows that the optical band gap (i.e.Eg) of the InxGa1-xN crystal tends to be narrow, then the absorption spectrum shifts to the low-energy direction. And the Fermi energy slightly moves to the bottom of conduction band which would cause the growth of conductivity by increasing x. In a word, the InxGa1-xN compound can be achieved theoretically the adjustable Eg and photoelectric performance with x, which will be used in making various optoelectronic devices including solar cell and sensors.

Electronic Structure, Effective Masses and Optical Properties of Monoclinic HfO2 from First-Principles Calculations

2011 ◽  
Vol 216 ◽  
pp. 341-344 ◽  
Author(s):  
Qi Jun Liu ◽  
Zheng Tang Liu ◽  
Li Ping Feng
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Band Structure ◽  
First Principles ◽  
Density Functional ◽  
First Principles Calculations ◽  
Functional Theory ◽  
Effective Masses ◽  
Indirect Band Gap ◽  
Calculated Equilibrium

Electronic structure, effective masses and optical properties of monoclinic HfO2were studied using the plane-wave ultrasoft pseudopotential technique based on the first-principles density-functional theory (DFT). The calculated equilibrium lattice parameters are in agreement with the previous works. From the band structure, the effective masses and optical properties are obtained. The calculated band structure shows that monoclinic HfO2has indirect band gap and all of the effective masses of electrons and holes are less than that of a free electron. The peaks position distributions of imaginary parts of the complex dielectric function have been explained according to the theory of crystal-field and molecular-orbital bonding.

First Principle Study of the Electronic Structure of Gd2SrAl2O7

2010 ◽  
Vol 434-435 ◽  
pp. 448-450
Author(s):  
J. Feng ◽  
Wei Pan ◽  
B. Xiao ◽  
Rui Fen Wu ◽  
Chun Lei Wan ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Ground State ◽  
First Principles ◽  
Density Functional ◽  
First Principle ◽  
Ionic Bond ◽  
Covalent Character ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
A Charge

The ground state electronic structure of Gd2SrAl2O7 are calculated using first principles, we found that only the Density functional theory (DFT) + U can correctly describe the Gd2SrAl2O7 as a charge-transfer type insulator. Gd-O and Al-O bonds have strong covalent character and Sr-O is a perfect ionic bond. The band gap of Gd2SrAl2O7is 3.9 eV, and it is opened due the large U correction for 4f orbit.

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