Morphological Dependence of Field Emission Properties of Silicon Nanowire Arrays

NANO ◽  
2016 ◽  
Vol 11 (02) ◽  
pp. 1650017 ◽  
Author(s):  
Sumanta Kumar Sahoo ◽  
Arumugam Marikani
Keyword(s):  
Field Emission ◽  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Deposition Process ◽  
Effective Work ◽  
Field Emission Properties ◽  
Silicon Nanowire Arrays ◽  
Aligned Arrays ◽  
Electron Field ◽  
Vertically Aligned

The electron field emission (EFE) properties of vertically aligned arrays of silicon nanowires (SiNWs) grown from silicon substrate at different gold sputtering periods of 0[Formula: see text]s, 8[Formula: see text]s, 15[Formula: see text]s and 25[Formula: see text]s at a rate of 10[Formula: see text]nm/min by electroless metal deposition process were investigated. It has been observed that the transformation of silicon tips from irregular to highly dense and uniform cylindrical morphological nanostructures with an increase in Au sputtering periods. A significant enhancement in EFE properties of as-prepared arrays of SiNWs with the increase in Au sputtering periods is observed. The threshold fields for attaining current density of 0.1[Formula: see text]mA[Formula: see text][Formula: see text] were decreased gradually as 32.38[Formula: see text][Formula: see text], 29.37[Formula: see text][Formula: see text] and 23.19[Formula: see text][Formula: see text] for the arrays of SiNWs synthesized from Si substrate by Au coating of 8[Formula: see text]s, 15[Formula: see text]s and 25[Formula: see text]s respectively. Moreover, from Fowler–Nordheim plot, the turn-on field is observed to decrease from 16.56[Formula: see text][Formula: see text] for as-prepared to 8.77[Formula: see text][Formula: see text] for 25[Formula: see text]s Au sputtered SiNW arrays. The effective work functions of the electron emitting array of SiNWs have been improved from 0.5[Formula: see text]meV to 0.1[Formula: see text]meV.

Relaxing the electrostatic screening effect by patterning vertically-aligned silicon nanowire arrays into bundles for field emission application

2014 ◽  
Vol 556 ◽  
pp. 146-154 ◽  
Author(s):  
Yung-Jr Hung ◽  
San-Liang Lee ◽  
Looi Choon Beng ◽  
Hsuan-Chen Chang ◽  
Yung-Jui Huang ◽  
...  
Keyword(s):  
Field Emission ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Screening Effect ◽  
Silicon Nanowire Arrays ◽  
Vertically Aligned

Dye-Improved Optical Absorption of Vertically Aligned Silicon Nanowire Arrays Synthesized by Electroless Etching of Silicon Wafer

2014 ◽  
Vol 895 ◽  
pp. 200-203 ◽  
Author(s):  
Hui Chiang Teoh ◽  
Sabar Derita Hutagalung
Keyword(s):  
Silicon Nanowires ◽  
High Performance ◽  
Silicon Nanowire ◽  
Incident Light ◽  
Electroless Etching ◽  
Dye Sensitized ◽  
Silicon Nanowire Arrays ◽  
Wide Range ◽  
Vertically Aligned ◽  
Si Wafer

Silicon nanowires (SiNWs) are important candidate for high performance electronic and optoelectronic devices due to their unique structures, electrical and optical properties. SiNWs were fabricated by silver-assisted electroless etching of Si wafer. Vertically aligned SiNW arrays with length about 8.75 μm and diameter of less than 90 nm have been fabricated. The reflectance of SiNWs without dye (12%) is greatly lower compared to bare Si wafer (25%). Therefore, SiNWs on Si substrate can be used as a good anti-reflection layer for a wide range of incident light. The reflectance of dye-sensitized SiNWs with red, green and blue dyes is 7%, 5.5%, and 5% respectively. The results confirmed that the reflectance of SiNWs with dye is much lower compared to SiNWs without dye and bare Si wafer. It was proven that dye on SiNWs can be used to reduce the reflectance (improved absorption) about 40% compared to SiNWs without dye.

Enhanced electron field emission properties of high aspect ratio silicon nanowire–zinc oxide core–shell arrays

2012 ◽  
Vol 14 (13) ◽  
pp. 4614 ◽  
Author(s):  
Vinayak S. Kale ◽  
Rajiv Ramanujam Prabhakar ◽  
Stevin S. Pramana ◽  
Manohar Rao ◽  
Chorng-Haur Sow ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Aspect Ratio ◽  
Field Emission ◽  
High Aspect Ratio ◽  
Silicon Nanowire ◽  
Core Shell ◽  
Electron Field Emission ◽  
Field Emission Properties ◽  
Electron Field ◽  
Electron Field Emission Properties

scholarly journals Cost-Effective Fabrication of Fractal Silicon Nanowire Arrays

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 1972
Author(s):  
Antonio Alessio Leonardi ◽  
Maria José Lo Faro ◽  
Maria Miritello ◽  
Paolo Musumeci ◽  
Francesco Priolo ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Self Assembly ◽  
Silicon Nanowire ◽  
Cost Effective ◽  
Thin Metal Film ◽  
Single Wire ◽  
Silicon Nanowire Arrays ◽  
Vertically Aligned ◽  
Strategic Element ◽  
Application Fields

Silicon nanowires (Si NWs) emerged in several application fields as a strategic element to surpass the bulk limits with a flat compatible architecture. The approaches used for the Si NW realization have a crucial impact on their final performances and their final cost. This makes the research on a novel and flexible approach for Si NW fabrication a crucial point for Si NW-based devices. In this work, the novelty is the study of the flexibility of thin film metal-assisted chemical etching (MACE) for the fabrication of Si NWs with the possibility of realizing different doped Si NWs, and even a longitudinal heterojunction p-n inside the same single wire. This point has never been reported by using thin metal film MACE. In particular, we will show how this approach permits one to obtain a high density of vertically aligned Si NWs with the same doping of the substrate and without any particular constraint on doping type and level. Fractal arrays of Si NWs can be fabricated without any type of mask thanks to the self-assembly of gold at percolative conditions. This Si NW fractal array can be used as a substrate to realize controllable artificial fractals, integrating other interesting elements with a cost-effective microelectronics compatible approach.

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