Absorption and optical conduction in InSe/ZnSe/InSe thin film transistors

In this work, (n)InSe/(p)ZnSe and (n)InSe/(p)ZnSe/(n)InSe heterojunction thin film transistor (TFT) devices are produced by the thermal evaporation technique. They are characterized by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersion X-ray spectroscopy and optical spectroscopy techniques. While the InSe films are found to be amorphous, the ZnSe and InSe/ZnSe films exhibited polycrystalline nature of crystallization. The optical analysis has shown that these devices exhibit a conduction band offsets of 0.47 and valence band offsets of 0.67 and 0.74[Formula: see text]eV, respectively. In addition, while the dielectric spectra of the InSe and ZnSe displayed resonance peaks at 416 and 528[Formula: see text]THz, the dielectric spectra of InSe/ZnSe and InSe/ZnSe/InSe layers indicated two additional peaks at 305 and 350[Formula: see text]THz, respectively. On the other hand, the optical conductivity analysis and modeling in the light of free carrier absorption theory reflected low values of drift mobilities associated with incident alternating electric fields at terahertz frequencies. The drift mobility of the charge carrier particles at femtoseconds scattering times increased as a result of the ZnSe sandwiching between two InSe layers. The valence band offsets, the dielectric resonance at 305 and 350[Formula: see text]THz and the optical conductivity values nominate TFT devices for use in optoelectronics.