Electrical and thermal properties of a (Ba1-x-ySrxCay)TiO3-based PTC thermistor for preheating light oil

2018 ◽  
Vol 11 (05) ◽  
pp. 1850076 ◽  
Author(s):  
Joonsoo Kim
Keyword(s):  
Thermal Properties ◽  
Electrical Properties ◽  
Solid State Reaction Method ◽  
Positive Temperature Coefficient ◽  
Room Temperature Resistivity ◽  
Positive Temperature ◽  
Conventional Solid State Reaction ◽  
Heater Element ◽  
Light Oil ◽  
Cartridge Heater

The electrical properties of a (Ba[Formula: see text]SrxCay)TiO3-based positive temperature coefficient (PTC) thermistor were determined by measuring resistivity with increasing temperature, and its thermal properties were measured with a cartridge heater made of a (Ba[Formula: see text]Sr[Formula: see text]Ca[Formula: see text])TiO3-based PTC thermistor. The (Ba[Formula: see text]SrxCay)TiO3-based PTC thermistor were fabricated by a conventional solid-state reaction method with Sb2O3, BaTiO3, SrTiO3, SiO2, and CaTiO3. Their electrical properties were determined by room temperature resistivity ([Formula: see text]C), minimum resistivity ([Formula: see text]), maximum resistivity ([Formula: see text]), resistivity jump rate (log [Formula: see text]/[Formula: see text]), Curie temperature ([Formula: see text]), and withstanding voltage. The effect of the microstructure on the electrical properties was investigated to improve the withstand voltage. The cartridge heater was fabricated with the (Ba[Formula: see text]Sr[Formula: see text]Ca[Formula: see text])TiO3-based PTC thermistor and its thermal properties were determined by the temperature of light oil in a 100 cc beaker. The temperature of light oil was maintained at 60[Formula: see text]C without fluctuations in temperature after reaching 60[Formula: see text]C at 220[Formula: see text]V, and thus (Ba[Formula: see text]SrxCay)TiO3-based PTC thermistor was able to operate as a self-regulating heater element for preheating light oil.

Electrical Properties of Nb-Doped and Nb-Mn-Codoped BaTiO3-(Bi0.5Na0.5)TiO3 Lead-Free PTCR Ceramics

2010 ◽  
Vol 67 ◽  
pp. 134-142
Author(s):  
Guo Rong Li ◽  
Sen Lin Leng ◽  
Liao Ying Zheng ◽  
Jiang Tao Zeng ◽  
Zhi Jun Xu ◽  
...  
Keyword(s):  
Room Temperature ◽  
Solid State Reaction Method ◽  
Positive Temperature Coefficient ◽  
Lead Free ◽  
High Resistivity ◽  
Room Temperature Resistivity ◽  
Positive Temperature ◽  
Conventional Solid State Reaction ◽  
Xrd Patterns ◽  
Temperature Resistivity

Nb-doped and Nb-Mn-codoped (1-xmol%)BaTiO3-xmol%(Bi0.5Na0.5)TiO3 (BBNTx) lead-free positive temperature coefficient of resistivity (PTCR) ceramics were prepared by the conventional solid state reaction method. The XRD patterns indicated that all BBNTx samples formed a single perovskite structure with tetragonal phase. 0.25 mol% Nb doped BBNT1 ceramic, sintered at 1330°C for 1h in air, had low room-temperature resistivity (ρ25) of 80 Ω•cm and a high resistivity jump (maximum resistivity [ρmax]/minimum resistivity [ρmin]) of 4.2 orders of magnitude with Tc about 152°C. The Nb-doped BBNTx (10≤x≤60) ceramics also showed distinct PTC effect with Tc between 185 and 232°C by sintering in N2, which was shut off when samples were cooled to a low temperature. In addition, The Nb-Mn-codoped BBNT1 ceramics exhibited higher resistivity jump than the single Nb-doped ones, with increasing the room-temperature resistivity.

Fabrication of Lead-Free and High Tc Positive Temperature Coefficient of Resistivity Ceramics Sintered in Air

2011 ◽  
Vol 415-417 ◽  
pp. 1005-1008
Author(s):  
Jun Zhao ◽  
Hai Bo Yang ◽  
Shu Ping Gong ◽  
Dong Xiang Zhou
Keyword(s):  
Temperature Coefficient ◽  
Solid State Reaction Method ◽  
Positive Temperature Coefficient ◽  
Lead Free ◽  
Room Temperature Resistivity ◽  
Positive Temperature ◽  
Conventional Solid State Reaction ◽  
High Tc ◽  
C Value ◽  
Temperature Coefficient Of Resistivity

As a lead-free positive temperature coefficient of resistivity (PTCR) material, [Ba0.95-x (K0.5Bi0.5)0.05Cax]1-yNbyO3 system was prepared by the conventional solid-state reaction method. All samples sintered in air at 1300°C possess PTC characteristics as well as semi-conductivity characteristics, especially they show high Tc(130°C~160°C) value and the jump of the resistivity (maximum resistivity ρmax / minimum resistivity ρmin ) is four orders of magnitude. Samples with the composition of 0.3mol% Nb5+ have low room-temperature resistivity (ρ25°C) of ~103Ω.cm.

The Influence of Ba-Ti Ratio on the Electrical Properties and Microstructures of the BaM-0.007Sm0.007TiO3 Based Ceramics Fired in Reducing Atmosphere

2011 ◽  
Vol 415-417 ◽  
pp. 1032-1037
Author(s):  
Xu Xin Cheng ◽  
Dong Xiang Zhou ◽  
Qiu Yun Fu ◽  
Shu Ping Gong
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Positive Temperature Coefficient ◽  
Room Temperature Resistivity ◽  
Positive Temperature ◽  
Reducing Atmosphere ◽  
Ptcr Effect ◽  
Temperature Coefficient Of Resistivity ◽  
Bst Ceramics ◽  
Better Than

Electrical properties, positive temperature coefficient of resistivity (PTCR), and microstructures of (Bam-0.007Sm0.007)TiO3(BST) with different Ba-site/Ti-site (A/B) ratio sintered in a reducing atmosphere and reoxidized in air are investigated. The results reveal that the room temperature resistivity of the semiconducting BST ceramics first decreases and then increases with increasing of A/B ratio (m), particularly when m is equal to 1.006, the semiconducting BST ceramics which have been sintered in a reducing atmosphere and reoxidized at 800°C exhibit significant PTCR effect with a resistance jumping ratio of 3 orders magnitude, and achieve a lower room temperature resisitivity of 80.8 Ω∙cm, in addition, the grain size distribution of the Ti-excess specimens is much better than that of the Ba-excess ones.

Investigation of PTCR effect and microdefects in Nb2O5-doped BaTiO3-based ceramics by positron annihilation techniques

2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744060
Author(s):  
Xuxin Cheng ◽  
Haining Cui ◽  
Xiaoxia Li ◽  
Wen Deng
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Positive Temperature Coefficient ◽  
Room Temperature Resistivity ◽  
Positive Temperature ◽  
Doppler Broadening ◽  
Temperature Coefficient Of Resistance ◽  
Ptcr Effect ◽  
Temperature Resistivity ◽  
Coincidence Doppler Broadening

The influence of Nb2O5-doped concentration on the positive temperature coefficient of resistance (PTCR) effect, electrical properties and microdefects of (Ba[Formula: see text]Sr[Formula: see text])(TiNb[Formula: see text])O3 (BSTN) ceramics were investigated. Firing was conducted at 1350[Formula: see text]C for 2 h in air. The donor-doped content affected the electrical properties, PTCR effect and formation of the microdefect type of the BSTN samples. The room temperature resistivity of the BSTN specimens first decreased and then increased with increasing donor-doped content in the range of 0.2 mol.% Nb[Formula: see text] to 0.5 mol.% Nb[Formula: see text]. Moreover, the information on microdefects in BSTN ceramics was demonstrated by coincidence Doppler broadening spectrum. The influence of the defects on the PTCR characteristics of the ceramics was also revealed.

PTC Behavior and Microstructure of Zn-Ni-Ti-O Ceramics

2010 ◽  
Vol 146-147 ◽  
pp. 1013-1016
Author(s):  
Yong Ping Pu ◽  
Yu Qin Mao ◽  
Ji Feng Wei
Keyword(s):  
Room Temperature ◽  
Spinel Phase ◽  
Solid State Reaction Method ◽  
Positive Temperature Coefficient ◽  
Room Temperature Resistivity ◽  
Positive Temperature ◽  
Clear Cut ◽  
Temperature Coefficient Of Resistivity ◽  
Synthetic Routes ◽  
Temperature Resistivity

Zn-Ni-Ti-O system ceramics were prepared by solid state reaction method using two different routes. The positive temperature coefficient of resistivity (PTCR) behavior and microstructure were investigated in terms of different composition and synthetic routes. It was found that using ZnO, NiO and TiO2 as the starting materials (route A), the prepared ceramics exhibited low room temperature resistivity (ρRT was ~102 Ω•cm) and inferior resistivity jump (ρmax/ρmin<50) starting at the temperature when it began to rise. However, using ZnOss (Zn0.95Ni0.05O), NiOss (Ni0.55Zn0.45O) and spinel phase (ZnNiTiO4) as starting materials (route B), the ceramics revealed ρRT >103 Ω•cm and marked resistivity jump (ρmax/ρmin was ~102) starting at ~200 °C. The microstructure showed that the ceramics prepared by route B possessed clear-cut grain boundaries but the grains of ceramics prepared by route A were irregular shape and distribution.

The Influence of Donor-Doped Concentration on the PTCR Characteristics of the Ban-xSmxTiO3 Based Ceramics Sintered in Reducing Atmosphere

2014 ◽  
Vol 881-883 ◽  
pp. 1031-1034
Author(s):  
Xu Xin Cheng ◽  
Dong Xiang Zhou ◽  
Zhao Xiong Zhao ◽  
Qiu Yun Fu
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Sintering Temperature ◽  
Positive Temperature Coefficient ◽  
Room Temperature Resistivity ◽  
Positive Temperature ◽  
Reducing Atmosphere ◽  
Ptcr Effect ◽  
Temperature Coefficient Of Resistivity ◽  
Temperature Resistivity

Positive temperature coefficient of resistivity (PTCR) effect and electrical properties of (Ban-xSmx)TiO3(BSMT ) samples with different Ba-site/Ti-site ratio (n) and various concentration of the donor-doped Sm3+(x) sintered in a reducing atmosphere and reoxidized in air are investigated. The results show that the room temperature resistivity (ρRT) of the semiconducting BSMT ceramics first decreases and then increases with increasing of concentration of the donor-doped Sm3+, especially whenxis 0.005 mol, the ρRTof the BSMT ceramics is the lowest. Moreover, the ρRTof the Ba-excess BSMT (n= 1.01) specimens reoxidized at 800 oC for 1 h after sintering at 1270 °C for 30 min in a reducing atmosphere is lower than the Ti-excess ones (n= 0.99), in addition, the ρRTof the BSMT specimens increases with an increase of both sintering temperature and reoxidized time.

scholarly journals Effects of Manganese on Highly Donor-Doped Barium Titanate Ceramics with Resistivity of Positive Temperature Coefficient

2020 ◽  
Vol 26 (4) ◽  
pp. 457-462
Author(s):  
Jianqiao LIU ◽  
Guohua JIN ◽  
Yuzhen CHEN ◽  
Zhaoxia ZHAI
Keyword(s):  
Electrical Properties ◽  
Temperature Coefficient ◽  
Positive Temperature Coefficient ◽  
Room Temperature Resistivity ◽  
Positive Temperature ◽  
Layer Width ◽  
Average Grain Size ◽  
Donor And Acceptor ◽  
Aerial Oxidation ◽  
Titanate Ceramics

Highly donor-doped ceramics with composition of Ba0.984Y0.016TiO3 were prepared for thermistors with positive temperature coefficient of resistivity (PTCR) via a route of solid reaction, reducing sintering and aerial oxidation. The effects of Mn additive were investigated on the ceramic characteristics of composition, morphology and electrical properties. The Mn incorporation affected little on ceramic composition but resulted in an obvious change in ceramic morphology, which illustrated the average grain size of 1.16, 1.65 and 1.01 μm for Mn addition amount of 0, 0.0005 and 0.0010, respectively. The grain growth, together with the Mn additive, influenced the electrical properties of room temperature resistivity, PTCR jump, donor and acceptor densities as well as the depletion layer width.

scholarly journals Electrical and Thermal Properties of Na1–xLixNbO3 (x = 0.08, 0.1 and 0.2) Ceramics Near the Morphotropic Phase Boundary Region

2017 ◽  
Vol 62 (2) ◽  
pp. 539-544 ◽  
Author(s):  
K. Konieczny ◽  
P. Czaja
Keyword(s):  
Thermal Properties ◽  
Electrical Properties ◽  
Phase Boundary ◽  
Morphotropic Phase Boundary ◽  
Solid State Reaction Method ◽  
Boundary Region ◽  
Conventional Solid State Reaction ◽  
Reaction Method ◽  
Practical Applications ◽  
Solid Compounds

AbstractNa1-xLixNbO3ceramics (for x = 0.08, 0.1, 0.2) were fabricated by the conventional solid state reaction method. The influence of LiNbO3on the microstructure, electric, thermal properties of Na1-xLixNbO3ceramics was studied and a significant influence of doped Li ions on the electrical properties was observed. The electrical properties were improved and are described as the best for x = 0.1 (near a morphotropic phase boundary) Na1–xLixNbO3solid solutions. After crossing the morphotropic phase boundary for x = 0.2, the electric properties are getting worse. These types of solid compounds show some interesting properties suitable for practical applications.

scholarly journals Crystal structure, dielectric, ferroelectric and energy storage properties of La-doped BaTiO3 semiconducting ceramics

2015 ◽  
Vol 05 (03) ◽  
pp. 1550027 ◽  
Author(s):  
Venkata Sreenivas Puli ◽  
Patrick Li ◽  
Shiva Adireddy ◽  
Douglas B. Chrisey
Keyword(s):  
Energy Storage ◽  
Room Temperature ◽  
Hysteresis Loops ◽  
Electrical Energy ◽  
Solid State Reaction Method ◽  
Positive Temperature Coefficient ◽  
Storage Capacitor ◽  
Positive Temperature ◽  
Conventional Solid State Reaction ◽  
La Doped

Polycrystalline La-doped [Formula: see text] [Formula: see text] [[Formula: see text]] ceramics (denoted as BTO,BLT1,BLT2,BLT3) were synthesized by conventional solid-state reaction method and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and Raman spectroscopy. XRD and Raman spectra revealed single-phase tetragonal perovskite crystalline structure. Well-saturated polarization–electric field ([Formula: see text]) hysteresis loops were observed with the measurement frequency of 50 Hz at room temperature and confirmed ferroelectric nature of these ceramics and a high recoverable electrical energy storage density of 0.350 J/cm3 with energy efficiency [Formula: see text], which is useful in energy storage capacitor applications. Dielectric studies revealed anomalies around 415–420 K and near the Curie temperature. The latter is attributed to the ferroelectric to paraelectric phase transition. Better dielectric performances were obtained for La-doped samples sintered at 1350°C for 4 h. Grain growth is inhibited with lanthanum (La) incorporation into the BTO lattice. Room temperature semiconducting behavior with positive temperature coefficient of resistivity (PTCR) behavior at [Formula: see text] is attributed to electron compensation mechanism.

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