The Influence of Ba-Ti Ratio on the Electrical Properties and Microstructures of the BaM-0.007Sm0.007TiO3 Based Ceramics Fired in Reducing Atmosphere

2011 ◽  
Vol 415-417 ◽  
pp. 1032-1037
Author(s):  
Xu Xin Cheng ◽  
Dong Xiang Zhou ◽  
Qiu Yun Fu ◽  
Shu Ping Gong
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Positive Temperature Coefficient ◽  
Room Temperature Resistivity ◽  
Positive Temperature ◽  
Reducing Atmosphere ◽  
Ptcr Effect ◽  
Temperature Coefficient Of Resistivity ◽  
Bst Ceramics ◽  
Better Than

Electrical properties, positive temperature coefficient of resistivity (PTCR), and microstructures of (Bam-0.007Sm0.007)TiO3(BST) with different Ba-site/Ti-site (A/B) ratio sintered in a reducing atmosphere and reoxidized in air are investigated. The results reveal that the room temperature resistivity of the semiconducting BST ceramics first decreases and then increases with increasing of A/B ratio (m), particularly when m is equal to 1.006, the semiconducting BST ceramics which have been sintered in a reducing atmosphere and reoxidized at 800°C exhibit significant PTCR effect with a resistance jumping ratio of 3 orders magnitude, and achieve a lower room temperature resisitivity of 80.8 Ω∙cm, in addition, the grain size distribution of the Ti-excess specimens is much better than that of the Ba-excess ones.

The Influence of Donor-Doped Concentration on the PTCR Characteristics of the Ban-xSmxTiO3 Based Ceramics Sintered in Reducing Atmosphere

2014 ◽  
Vol 881-883 ◽  
pp. 1031-1034
Author(s):  
Xu Xin Cheng ◽  
Dong Xiang Zhou ◽  
Zhao Xiong Zhao ◽  
Qiu Yun Fu
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Sintering Temperature ◽  
Positive Temperature Coefficient ◽  
Room Temperature Resistivity ◽  
Positive Temperature ◽  
Reducing Atmosphere ◽  
Ptcr Effect ◽  
Temperature Coefficient Of Resistivity ◽  
Temperature Resistivity

Positive temperature coefficient of resistivity (PTCR) effect and electrical properties of (Ban-xSmx)TiO3(BSMT ) samples with different Ba-site/Ti-site ratio (n) and various concentration of the donor-doped Sm3+(x) sintered in a reducing atmosphere and reoxidized in air are investigated. The results show that the room temperature resistivity (ρRT) of the semiconducting BSMT ceramics first decreases and then increases with increasing of concentration of the donor-doped Sm3+, especially whenxis 0.005 mol, the ρRTof the BSMT ceramics is the lowest. Moreover, the ρRTof the Ba-excess BSMT (n= 1.01) specimens reoxidized at 800 oC for 1 h after sintering at 1270 °C for 30 min in a reducing atmosphere is lower than the Ti-excess ones (n= 0.99), in addition, the ρRTof the BSMT specimens increases with an increase of both sintering temperature and reoxidized time.

The Influence of Donor-Doped Content on PTCR Effect of (Ba1-xSmx)TiO3 Based Ceramics Prepared by the Reduction Sintering-Reoxidation Method

2014 ◽  
Vol 1015 ◽  
pp. 517-520
Author(s):  
Xu Xin Cheng ◽  
Zhao Xiong Zhao ◽  
Dong Xiang Zhou ◽  
Qiu Yun Fu
Keyword(s):  
Room Temperature ◽  
Positive Temperature Coefficient ◽  
Room Temperature Resistivity ◽  
Positive Temperature ◽  
Dopant Content ◽  
Reducing Atmosphere ◽  
Donor Dopant ◽  
Ptcr Effect ◽  
Temperature Coefficient Of Resistivity ◽  
Temperature Resistivity

We investigated the effect of the donor-doped content on the positive temperature coefficient of resistivity (PTCR) of (Ba1-xSmx)TiO3(BST) Based Ceramics that were sintered at 1300 °C for 30 min in a reducing atmosphere and re-oxidized at 850 °C for 1 h. The results indicated that the resistance jump first increased and then decreased with an increase of the donor-doped concentration. Moreover, the specimens achieved a low room temperature resistivity of 383.1 Ω·cm at a donor-doped content and exhibited a pronounced PTCR characteristics with a resistance jump of 3.1 orders of magnitude. Furthermore, the RT reisistivity of the samples reduced and increased with the increasing of the donor-dopant content in the range of 0.1−0.5 mol% Sm3+. In addition, the effect of the Sm3+-doped concentration on the grain size of the ceramics was investigated in our paper.

Influence of sintering process on electrical properties and PTCR effect of laminated Ba1.005(Ti1−xNbx)O3 ceramics fired in a reducing atmosphere

2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744061
Author(s):  
Xuxin Cheng ◽  
Xiaoxia Li ◽  
Xiaoming Chen ◽  
Haining Cui
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Dopant Concentration ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Sintering Process ◽  
Dopant Content ◽  
Reducing Atmosphere ◽  
Ptcr Effect ◽  
Different Temperatures

This study investigates the influence of dopant content and firing conditions on electrical properties and positive temperature coefficient of resistance (PTCR) effect of Ba[Formula: see text](Ti[Formula: see text]Nb[Formula: see text]O3 (BTN) ceramics sintered at different temperatures from 1070[Formula: see text]C to 1220[Formula: see text]C for 2 h in a reducing atmosphere and reoxidized within the temperature range of 600[Formula: see text]–[Formula: see text]750[Formula: see text]C for 0.5[Formula: see text]–[Formula: see text]8 h. The results indicate that the room-temperature (RT) resistance of the laminated BTN specimens initially decreased and then increased as a function of the dopant concentration. Moreover, the resistance jump exhibited a contrasting tendency. Furthermore, the RT resistance of the BTN samples rapidly decreased at first and then gradually decreased with increasing sintering temperature. Meanwhile, the resistance jump of the samples increased first and then decreased. In addition, the influence of reoxidation times on the PTCR characteristics of ceramics was investigated.

Influence of Ba/Ti ratio on PTCR effect of Bam(Ti1−xNbx)O3 ceramics prepared by the reduction sintering-reoxidation method

2018 ◽  
Vol 32 (34n36) ◽  
pp. 1840071
Author(s):  
Xuxin Cheng ◽  
Xiaoming Chen ◽  
Xiaoxia Li ◽  
Haining Cui ◽  
Chao Xiong
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Temperature Coefficient Of Resistance ◽  
Reducing Atmosphere ◽  
Sintering Time ◽  
Ptcr Effect ◽  
Sintering Conditions ◽  
Average Sample

In this work, we investigate the influences of Ba/Ti ratio and sintering conditions on the characteristics of positive temperature coefficient of resistance (PTCR) and electrical properties of Ba[Formula: see text](Ti[Formula: see text]Nb[Formula: see text])O3 (BTN) ceramics. The ceramics were fired at 1190[Formula: see text]C for 0.5–6.0 h in a reducing atmosphere and then reoxidized at 600–650[Formula: see text]C for 0–8 h. The Ba/Ti ratio [Formula: see text] affected the electrical properties and PTCR effect of the BTN specimens. The room-temperature (RT) resistance of the BTN samples initially decreased [Formula: see text] and then increased [Formula: see text] as the Ba/Ti ratio increased. Moreover, BTN ceramics exhibit a pronounced PTCR effect, with a resistance jump greater by 3.0 orders of magnitude and a low 0.1 [Formula: see text] RT resistance at a low reoxidation temperature of 600[Formula: see text]C after sintering under a reducing atmosphere. Furthermore, the average sample grain size increased along with the Ba/Ti ratio. In addition, the influence of the sintering time and the reoxidation time on the electrical properties and the PTCR effect were also investigated.

Investigation of PTCR effect and microdefects in Nb2O5-doped BaTiO3-based ceramics by positron annihilation techniques

2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744060
Author(s):  
Xuxin Cheng ◽  
Haining Cui ◽  
Xiaoxia Li ◽  
Wen Deng
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Positive Temperature Coefficient ◽  
Room Temperature Resistivity ◽  
Positive Temperature ◽  
Doppler Broadening ◽  
Temperature Coefficient Of Resistance ◽  
Ptcr Effect ◽  
Temperature Resistivity ◽  
Coincidence Doppler Broadening

The influence of Nb2O5-doped concentration on the positive temperature coefficient of resistance (PTCR) effect, electrical properties and microdefects of (Ba[Formula: see text]Sr[Formula: see text])(TiNb[Formula: see text])O3 (BSTN) ceramics were investigated. Firing was conducted at 1350[Formula: see text]C for 2 h in air. The donor-doped content affected the electrical properties, PTCR effect and formation of the microdefect type of the BSTN samples. The room temperature resistivity of the BSTN specimens first decreased and then increased with increasing donor-doped content in the range of 0.2 mol.% Nb[Formula: see text] to 0.5 mol.% Nb[Formula: see text]. Moreover, the information on microdefects in BSTN ceramics was demonstrated by coincidence Doppler broadening spectrum. The influence of the defects on the PTCR characteristics of the ceramics was also revealed.

The Influence of Sintering Atmosphere and Reoxidation Temperature on the Electrical Properties of the Chip-Type Ba1-xSmxTiO3 Based Ceramics

2014 ◽  
Vol 900 ◽  
pp. 134-137
Author(s):  
Xu Xin Cheng ◽  
Dong Xiang Zhou ◽  
Qi Jun Xiao ◽  
Zhao Xiong Zhao
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Room Temperature Resistivity ◽  
Sintering Atmosphere ◽  
Reducing Atmosphere ◽  
Chip Type ◽  
Ptcr Effect ◽  
Temperature Resistivity

The PTCR characteristics of (Ba1-xSmx)TiO3(BSMT) with different donor-doped concentration (x) sintered in a reducing atmosphere and reoxidized in air are investigated. The results reveal that the room temperature resistivity (ρRT) of the semiconducting BSMT ceramics first decreases and then increases with increasing of thexvalues, especially whenxis 0.004, the semiconducting BSMT ceramics reoxidized at 850oC for 1 h after sintering at 1300 °C for 30 min in a reducing atmosphere achieve a lower room temperature resisitivity of 82.6 Ωcm. in addition, the doped 0.1 mol% Sm3+BSMT samples fired at 1300 °C for 30 min in air exhibit remarkable PTCR effect with a resistance jumping ratio of 3.4 orders magnitude; moreover, a lower ρRTof the BSMT specimens sintered in a reducing atmosphere is obtained.

Microstructures and Electrical Properties of BaTiO3 PTC Ceramics

2013 ◽  
Vol 804 ◽  
pp. 118-122 ◽  
Author(s):  
Myoung Pyo Chun ◽  
Hyo Soon Shin ◽  
Sang Il Hyun ◽  
Byung Ik Kim
Keyword(s):  
Electron Microscope ◽  
Pressure Range ◽  
Room Temperature ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Reducing Atmosphere ◽  
Microscope Images ◽  
Ptcr Effect ◽  
The Relationship ◽  
Scanning Electron

The microstructure, especially porosity, of PTC (positive temperature coefficient) thermistor based on BaTiO3 was controlled with a forming pressure. The relationship between theirPTCR properties and microstructureswas investigated with an optical and SEM (Scanning Electron Microscope) images and digital multimeter. Disk samples were fabricated by pressinguniaxially at various pressures of 100~15000kg/cm2 and sintering at 1265°C in reducing atmosphere and finally re-oxidizing at 700°C in air. The porosity of the samples decreased rapidly from 45% to 8% with increasing the forming pressure from 100 to 1000kg/cm2andbecame 4% at 15000kg/cm2with slowdecreasing of porosity in the pressure range of 1000~15000kg/cm2.With increasing the forming pressure, the resistivity jump of samplesdecreased rapidlyfrom 0.5 to 2.9 at about1000kg/cm2that corresponds tothe porosity of 15% and was saturated above this pressure. It is considered that there is a critical amount of porosity for having PTCR effect, which was about 15% in our samples. In addition, the porosity of the sample has a greater influence on the resistivity jump than on theresistivity at room temperature, which is due to the oxidation of grain boundary through a favorable channel of oxygen such as a pore.

Electrical properties of polyethylene highly filled with carbon

1996 ◽  
Vol 11 (11) ◽  
pp. 2889-2894 ◽  
Author(s):  
F. A. Modine ◽  
A. R. Duggal ◽  
D. N. Robinson ◽  
E. L. Churnetski ◽  
M. Bartkowiak ◽  
...  
Keyword(s):  
Room Temperature ◽  
Positive Temperature Coefficient ◽  
Melting Transition ◽  
Room Temperature Resistivity ◽  
Positive Temperature ◽  
Resistance Change ◽  
Carbon Blacks ◽  
Low Resistivity ◽  
Trade Offs ◽  
Temperature Coefficient Of Resistivity

Carbon-filled polyethylene composites were fabricated and tested to establish the practical lower limit of their electrical resistivity at room temperature and to investigate the trade-offs between low resistivity and the magnitude of the resistance anomaly (i.e., a large positive temperature coefficient of resistivity) that appears when such composites are heated through the polyethylene crystalline melting transition. Carbon blacks with large particle size and low surface area provided low-resistivity composites having large resistance anomalies. The largest resistance anomalies were found in composites that were well mixed, but the room-temperature resistivity also increased in composites that were cycled repetitively through the crystalline-melting transition. A mixture of carbon blacks of two different sizes provided a lower resistance than was found in a material with the same fill of only the coarser black. By controlling the composition and the processing, composites were made with room-temperature resistivities lower than 0.2 ohm cm and resistance changes of at least 2 orders of magnitude. A resistance change of as much as 5 orders of magnitude was obtained for composites with room-temperature resistivities of only 1 ohm cm.

Positive temperature coefficient of resistivity effect in Pb-doped KnbO3

2002 ◽  
Vol 17 (12) ◽  
pp. 2989-2992 ◽  
Author(s):  
Irena Pribošič ◽  
Darko Makovec ◽  
Miha Drofenik
Keyword(s):  
Phase Transition ◽  
Temperature Coefficient ◽  
Ferroelectric Material ◽  
Positive Temperature Coefficient ◽  
Cubic Phase ◽  
Room Temperature Resistivity ◽  
Positive Temperature ◽  
Ptcr Effect ◽  
Temperature Coefficient Of Resistivity ◽  
Temperature Resistivity

KnbO3 is a ferroelectric material with a Curie temperature (TC) at 415°C, thus giving it the potential to be a material for high-temperature positive temperature coefficient of resistivity (PTCR) applications. In this study, we investigated the PTCR effect in donor-doped KnbO3 ceramics containing 0, 0.1, 0.2, and 0.3 mol% PbO. The donor-doped KnbO3 ceramics exhibited a PTCR anomaly with a relatively low room-temperature resistivity. The temperature of the tetragonal-to-cubic phase transition (TC) of the KnbO3 decreased with the amount of added PbO, while the orthorhombic-to-tetragonal phase transition (TOT) remained unchanged.

Quantitative calculation of barium vacancy formation mechanism effects on the room-temperature resistance and PTCR effect in donor-doped BaTiO3 ceramics

2016 ◽  
Vol 30 (27) ◽  
pp. 1650211
Author(s):  
Chao Fang
Keyword(s):  
Formation Mechanism ◽  
Room Temperature ◽  
Sintering Temperature ◽  
Positive Temperature Coefficient ◽  
Vacancy Formation ◽  
Room Temperature Resistivity ◽  
Positive Temperature ◽  
Quantitative Calculation ◽  
Ptcr Effect ◽  
Temperature Resistivity

A modified barium vacancy formation mechanism in donor-doped barium titanate (BaTiO3) ceramics is proposed. Assuming a uniform distribution of barium vacancies at sintering temperature and only oxygen partial pressure and sintering temperature related concentration of unionized barium vacancies, the electrical characteristics have been calculated by solving a differential equation about electron level. The room-temperature resistivity and positive temperature coefficient of resistivity (PTCR) behaviors of donor-doped BaTiO3 semiconducting ceramics have been quantitatively computed. The results pointed out that the room-temperature resistivity changes as a U-type curve with an increase of donor concentration. Moreover, the PTCR effect of BaTiO3 semiconductive ceramics was calculated quantitatively under different conditions. Theoretical and experimental results for BaTiO3 semiconductive ceramics are compared and discussed.

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