PREPARATION AND CHARACTERIZATION OF LaFeO3 THIN FILMS ON (100) SrTiO3 SUBSTRATES BY PULSED LASER DEPOSITION

2011 ◽  
Vol 01 (03) ◽  
pp. 363-367 ◽  
Author(s):  
HONG LIU ◽  
JIANGUO ZHU ◽  
DINGQUAN XIAO
Keyword(s):  
Pulsed Laser Deposition ◽  
Quantum Interference ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

A single-crystalline, crack-free, epitaxial (100)c LaFeO3 films were in situ grown by pulsed laser deposition on (100) SrTiO3 substrates. X-ray diffraction, atomic force microscopy and transmission electron microscopy reveal that the LaFeO3 films have high crystalline quality, a very smooth surface, and an atomically sharp LaFeO3/SrTiO3 interface. The magnetic properties of the LaFeO3 films were obtained by a superconducting quantum interference device magnetometry. The saturated magnetization and coercive field of LaFeO3 films are 14 emu/cm3 and 600 Oe, respectively.

Stability and Structural Characterization of Epitaxial NdNiO3 Films Grown by Pulsed Laser Deposition

2000 ◽  
Vol 658 ◽  
Author(s):  
Trong-Duc Doan ◽  
Cobey Abramowski ◽  
Paul A. Salvador
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Monoclinic Distortion

ABSTRACTThin films of NdNiO3 were grown using pulsed laser deposition on single crystal substrates of [100]-oriented LaAlO3 and SrTiO3. X-ray diffraction and reflectivity, scanning electron microscopy, and atomic force microscopy were used to characterize the chemical, morphological and structural traits of the thin films. Single-phase epitaxial films are grown on LaAlO3 and SrTiO3 at 625°C in an oxygen pressure of 200 mTorr. At higher temperatures, the films partially decompose to Nd2NiO4 and NiO. The films are epitaxial with the (101) planes (orthorhombic Pnma notation) parallel to the substrate surface. Four in-plane orientational variants exist that correspond to the four 90° degenerate orientations of the film's [010] with respect to the in-plane substrate directions. Films are observed to be strained in accordance with the structural mismatch to the underlying substrate, and this leads, in the thinnest films on LaAlO3, to an apparent monoclinic distortion to the unit cell.

Characterization of (Bi0.25Sb0.75)2Te3 Deposited by Pulsed Laser Deposition

2008 ◽  
Author(s):  
Ahmed Kamal ◽  
Hassan Abu Bakr ◽  
Ziyang Wang ◽  
H. El Samman ◽  
Paolo Fiorini ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Background Gas

The main objective of this work is to investigate the possibility of preparing bismuth telluride thin films using pulsed laser deposition. The effect of varying the deposition pressure, laser fluence, and the deposition temperature on the surface roughness, film composition, grain microstructure and electrical resistivity is analyzed using, scanning electron microscopy, atomic force microscopy, X-ray fluorescence, transmission electron microscopy, and four point probe measurements. It is demonstrated that relatively smooth films can be deposited at a laser flounce of 0.6 J/cm2 and using argon as a background gas at 10−1 mbar. On the other hand, resistivities as low as 2 mΩ.cm can be obtained by either depositing the film at 200°C, or by post-laser annealing films deposited at room temperature.

Surface Morphology Of PZT Thin Films Prepared By Pulsed Laser Deposition

2000 ◽  
Vol 617 ◽  
Author(s):  
Masaaki Yamazato ◽  
Masamitsu Nagano ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara
Keyword(s):  
Surface Morphology ◽  
Pulsed Laser Deposition ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Grid Electrode ◽  
Force Microscopy ◽  
Atomic Force ◽  
Tan Δ

AbstractFerroelectric PbZr0.52Ti0.48O3(PZT)/YBa2 Cu3O7−x(YBCO) heterostructures on MgO substrate were fabricated by KrF pulsed laser deposition. The grid electrode was set between a substrate and target for improvement of surface morphology. The typical PZT layer had excellent ferroelectric properties; remnant polarization of 39 µC/cm2, coercive electric field of 41 kV/cm, loss tan δ=0.04, and dielectric constant of 950. X-ray diffraction results show that the films had highly c-axis and (a, b) plane orientation. The full widths at half-maximum (FWHM) of rocking curves was decreased with increasing the applied voltage of grid electrode. Atomic force microscopy (AFM) images of PZT layer showed that the film morphology was improved by using a grid electrode.

Pulsed laser deposition of titanium nitride films on sapphire

1999 ◽  
Vol 14 (8) ◽  
pp. 3298-3302 ◽  
Author(s):  
V. Talyansky ◽  
S. Choopun ◽  
M.J. Downes ◽  
R. P. Sharma ◽  
T. Venkatesan ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Coincidence Site Lattice ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Room Temperature Resistivity ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Tin Film ◽  
Transmission Electron

We successfully deposited high-quality TiN films on c-plane sapphire by using the pulsed laser deposition technique. TiN grew on sapphire with two in-plane epitaxial relationships: (111)TiN//(0001)sapphire and [101]TiN//[1100]sapphire or (111)TiN// (0001)sapphire and [101]TiN//[1100]sapphire. The TiN unit cell showed a ±30° in-plane rotation for sapphire. The misfit between the TiN film and the sapphire substrate was calculated by using the near coincidence site lattice approach. The deposited films were analyzed by x-ray diffraction, transmission electron microscopy, atomic force microscopy, Rutherford backscattering or channeling spectrometry, electrical, and spectrophotometric measurements. The dependence of the film's crystalline quality on the deposition temperature has been investigated. The full width half-maximum of the rocking curve of the TiN 111 peak was 0.2–0.3°. The minimum ion channeling was 5%, and the room temperature resistivity was as low as 13 μω cm.

Surface morphology, bioactivity, and antibacterial studies of pulsed laser deposited hydroxyapatite coatings on Stainless Steel 254 for orthopedic implant applications

2016 ◽  
Vol 233 (2) ◽  
pp. 120-127 ◽  
Author(s):  
Ashish Das ◽  
Mukul Shukla
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Orthopedic Implant ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Hydroxyapatite Coatings ◽  
Scanning Electron

Coating of hydroxyapatite using the pulsed laser deposition technique, on medical grade UNS S31254 stainless steel (254SS), to yield a biomaterial for potential orthopedic implant applications, is unreported so far in the literature. In this paper, the pulsed laser deposition process was used to improve the physiological response of 254SS. The surface morphology of the deposited hydroxyapatite coatings was characterized using scanning electron microscopy and atomic force microscopy, while the phase composition of the deposited hydroxyapatite coatings was determined using the X-ray diffraction method. The thickness and adhesive strength of the hydroxyapatite coatings were determined using an ellipsometer and a tensometer, respectively. The antibacterial efficacy of the deposited hydroxyapatite coatings was confirmed using the modern technique of fluorescence-activated cell sorting. Finally, the bioactivity of hydroxyapatite coatings was investigated by conducting immersion test in simulated body fluid environment. The scanning electron microscopy and atomic force microscopy results revealed higher (∼8 nm) average surface roughness, which is likely to facilitate better osseointegration. X-ray diffraction analysis confirmed that postdeposition annealing is essential to achieve the desired crystallinity and uniformity of coatings. Tensile pull-out tests confirmed adhesive strength of hydroxyapatite coatings beyond the standard expected values. Immersion tests inferred high bioactivity of pulsed laser deposition hydroxyapatite coatings. The promising results obtained in this research signify the potential application of hydroxyapatite coatings in orthopedic implants.

scholarly journals Imaging pulsed laser deposition oxide growth by in situ atomic force microscopy

2017 ◽  
Vol 88 (12) ◽  
pp. 123902 ◽  
Author(s):  
W. A. Wessels ◽  
T. R. J. Bollmann ◽  
D. Post ◽  
G. Koster ◽  
G. Rijnders
Keyword(s):  
Atomic Force Microscopy ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Growth ◽  
Force Microscopy ◽  
Atomic Force

The Structural and Morphology of (La0.7Sr0.3)MnO3 Thin Films Prepared by Pulsed Laser Deposition

2010 ◽  
Vol 150-151 ◽  
pp. 908-911 ◽  
Author(s):  
Wei Rao ◽  
Jun Yu
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Perovskite Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

(La0.7Sr0.3)MnO3 (LSMO) thin films were prepared on Si (100) substrate by pulsed laser deposition (PLD). Both structure and surface morphology of the films were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). Furthermore, the chemical states and chemical composition of the films were determined by X-ray photoelectron spectroscopy (XPS) near the surface. The results indicate that the films grown on Si (100) substrates have a single pseudo cubic perovskite phase structure with a high (100) orientation. The XPS results show that La, Sr and Mn exist mainly in the forms of perovskite structure and a SrO layer was found on outermost surface.

Fabrication Of Nd:YVO4 Thin Film Waveguide Grown on Si/SiO2 by Pulsed Laser Deposition

2008 ◽  
Vol 373-374 ◽  
pp. 142-145
Author(s):  
Hong Xia Li ◽  
Ren Guo Song ◽  
Xin Wu ◽  
Ji Yang Wang
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Force Microscopy ◽  
Preparation Conditions ◽  
Atomic Force

High quality Nd:YVO4 thin films were fabricated successfully by using a pulsed laser deposition technique. The properties of the samples were characterized by using X-ray diffraction, atomic force microscopy, and prism-coupling measurements. According to above discussion, we concluded the optimal preparation conditions for Nd:YVO4 films prepared on Si/SiO2 substrates.

X-Ray Photoelectron Spectroscopy of (La0.7Sr0.3)MnO3Thin Films Prepared by Pulsed Laser Deposition

2011 ◽  
Vol 284-286 ◽  
pp. 2191-2197 ◽  
Author(s):  
Hui Fang Xiong ◽  
Tie Dong Cheng ◽  
X.G. Tang ◽  
Jian Chen ◽  
Qiu Xiang Liu
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Perovskite Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

(La0.7Sr0.3)MnO3 (LSMO) thin films were grown on Si (100) substrate by using pulsed laser deposition (PLD) process. Both structure and surface morphology of the films were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). Furthermore, the chemical states and chemical composition of the films were determined by X-ray photoelectron spectroscopy (XPS) near the surface. From XRD, the results indicate that the films grown on Si (100) substrates have a single pseudocubic perovskite phase structure with a high (100) orientation. The XPS results show that La, Sr and Mn exist mainly in the forms of perovskite structure and a SrO layer was found on outermost surface. The films resistivity emeasured under room temperature is 6.4´10-4 W×cm.

Frequency and Temperature Dependence of Dielectric Properties of Orthorhombic HoMnO3 Thin Films

2014 ◽  
Vol 1025-1026 ◽  
pp. 427-431
Author(s):  
Ping Gao ◽  
Wei Zhang ◽  
Wei Tian Wang
Keyword(s):  
Dielectric Properties ◽  
Pulsed Laser ◽  
Signal Amplitude ◽  
Debye Model ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cole Diagram

Orthorhombic HoMnO3 films were prepared epitaxially on Nb-doped SrTiO3 single crystal substrates by using pulsed laser deposition technique. The films showed perfectly a-axis crystallographic orientations. X-ray diffraction and atomic force microscopy were used to characterize the films. The complex dielectric properties were measured as functions of frequency (40 Hz~1 MHz) and temperature (80 K~300 K) with a signal amplitude of 50 mv. The respective dielectric relaxation peaks shifted to higher frequency as the measuring temperature increased, with the same development of real part of the complex permittivity. The cole-cole diagram was obtained according to the Debye model, and the effects of relaxation process were discussed.

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