Temporal Changes in Source–Drain Current for Organic Field-Effect Transistors Caused by Dipole on Insulator Surface

2008 ◽  
Vol 1 ◽  
pp. 061801 ◽  
Author(s):  
Kouji Suemori ◽  
Misuzu Taniguchi ◽  
Sei Uemura ◽  
Manabu Yoshida ◽  
Satoshi Hoshino ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Temporal Changes ◽  
Organic Field Effect Transistors ◽  
Insulator Surface

Time variation of source-drain current for organic field-effect transistors with dipoles of insulator surface

2010 ◽  
Vol 8 (2) ◽  
pp. 601-603 ◽  
Author(s):  
Kouji Suemori ◽  
Misuzu Taniguchi ◽  
Sei Uemura ◽  
Manabu Yoshida ◽  
Satoshi Hoshino ◽  
...  
Keyword(s):  
Time Variation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Organic Field Effect Transistors ◽  
Insulator Surface

High Performance Organic Field-Effect Transistors and Integrated Inverters

2001 ◽  
Vol 665 ◽  
Author(s):  
A. Ullmann ◽  
J. Ficker ◽  
W. Fix ◽  
H. Rost ◽  
W. Clemens ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Drain Current ◽  
Organic Field Effect Transistors ◽  
Metal Contacts ◽  
Gate Electrodes ◽  
Polymer Semiconductors ◽  
Set Up

ABSTRACTIntegrated plastic circuits (IPCs) will become an integral component of future low cost electronics. For low cost processes IPCs have to be made of all-polymer Transistors. We present our recent results on fabrication of Organic Field-Effect Transistors (OFETs) and integrated inverters. Top-gate transistors were fabricated using polymer semiconductors and insulators. The source-drain structures were defined by standard lithography of Au on a flexible plastic film, and on top of these electrodes, poly(3-alkylthiophene) (P3AT) as semiconductor, and poly(4-hydroxystyrene) (PHS) as insulator were homogeneously deposited by spin-coating. The gate electrodes consist of metal contacts. With this simple set-up, the transistors exhibit excellent electric performance with a high source-drain current at source - drain and gate voltages below 30V. The characteristics show very good saturation behaviour for low biases and are comparable to results published for precursor pentacene. With this setup we obtain a mobility of 0.2cm2/Vs for P3AT. Furthermore, we discuss organic integrated inverters exhibiting logic capability. All devices show shelf-lives of several months without encapsulation.

scholarly journals Driving Electrolyte-Gated Organic Field-Effect Transistors with Redox Reactions

Proceedings ◽  
2020 ◽  
Vol 60 (1) ◽  
pp. 31
Author(s):  
Benoit Piro ◽  
Jérémy le Gall ◽  
Roberta Brayner ◽  
Giorgio Mattana ◽  
Vincent Noël
Keyword(s):  
Environmental Monitoring ◽  
Field Effect ◽  
Redox Reactions ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Organic Field Effect Transistors ◽  
Semiconductor Interface ◽  
Mode Of Operation ◽  
Gate Potential ◽  
O2 Production

Organic electrochemical transistors (OECTs) are now well-known, robust and efficient as amplification devices for redox reactions, typically biologically ones. In contrast, electrolyte-gated organic field-effect transistors (EGOFETs) have never been described for that kind of application because field-effect transistors are known as capacitive coupled devices, i.e., driven by changes in capacitance at the electrolyte/gate or electrolyte/semiconductor interface. For such a kind of transistors, any current flowing at the gate electrode is seen as a drawback. However, we demonstrate in this paper that not only the gate potential can trigger the source-drain current of EGOFETs, which is the generally accepted mode of operation, but that the current flowing at the gate can also be used. Because EGOFETs can work directly in water, and as an example of application, we demonstrate the possibility to monitor microalgae photosynthesis through the direct measurement of photosynthetic O2 production within the transistor’s electrolyte, thanks to its electroreduction on the EGOFET’s gate. This paves the way for the use of EGOFETs for environmental monitoring.

scholarly journals Short-time-scale threshold voltage shifts in organic field-effect transistors caused by dipoles on insulator surface

2011 ◽  
Vol 14 ◽  
pp. 217-220
Author(s):  
Kouji Suemori ◽  
Misuzu Taniguchi ◽  
Sei Uemura ◽  
Manabu Yoshida ◽  
Satoshi Hoshino ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Time Scale ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Short Time Scale ◽  
Organic Field Effect Transistors ◽  
Insulator Surface ◽  
Short Time

High capacitance organic field-effect transistors with modified gate insulator surface

2004 ◽  
Vol 96 (10) ◽  
pp. 5781-5787 ◽  
Author(s):  
L. A. Majewski ◽  
R. Schroeder ◽  
M. Grell ◽  
P. A. Glarvey ◽  
M. L. Turner
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Insulator ◽  
Organic Field Effect Transistors ◽  
High Capacitance ◽  
Insulator Surface

Influence of fine roughness of insulator surface on threshold voltage stability of organic field-effect transistors

2008 ◽  
Vol 93 (3) ◽  
pp. 033308 ◽  
Author(s):  
Kouji Suemori ◽  
Sei Uemura ◽  
Manabu Yoshida ◽  
Satoshi Hoshino ◽  
Noriyuki Takada ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Voltage Stability ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Insulator Surface

Threshold voltage stability of organic field-effect transistors for various chemical species in the insulator surface

2007 ◽  
Vol 91 (19) ◽  
pp. 192112 ◽  
Author(s):  
Kouji Suemori ◽  
Sei Uemura ◽  
Manabu Yoshida ◽  
Satoshi Hoshino ◽  
Noriyuki Takada ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Voltage Stability ◽  
Field Effect Transistors ◽  
Chemical Species ◽  
Organic Field Effect Transistors ◽  
Insulator Surface
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