scholarly journals Driving Electrolyte-Gated Organic Field-Effect Transistors with Redox Reactions

Proceedings ◽  
2020 ◽  
Vol 60 (1) ◽  
pp. 31
Author(s):  
Benoit Piro ◽  
Jérémy le Gall ◽  
Roberta Brayner ◽  
Giorgio Mattana ◽  
Vincent Noël
Keyword(s):  
Environmental Monitoring ◽  
Field Effect ◽  
Redox Reactions ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Organic Field Effect Transistors ◽  
Semiconductor Interface ◽  
Mode Of Operation ◽  
Gate Potential ◽  
O2 Production

Organic electrochemical transistors (OECTs) are now well-known, robust and efficient as amplification devices for redox reactions, typically biologically ones. In contrast, electrolyte-gated organic field-effect transistors (EGOFETs) have never been described for that kind of application because field-effect transistors are known as capacitive coupled devices, i.e., driven by changes in capacitance at the electrolyte/gate or electrolyte/semiconductor interface. For such a kind of transistors, any current flowing at the gate electrode is seen as a drawback. However, we demonstrate in this paper that not only the gate potential can trigger the source-drain current of EGOFETs, which is the generally accepted mode of operation, but that the current flowing at the gate can also be used. Because EGOFETs can work directly in water, and as an example of application, we demonstrate the possibility to monitor microalgae photosynthesis through the direct measurement of photosynthetic O2 production within the transistor’s electrolyte, thanks to its electroreduction on the EGOFET’s gate. This paves the way for the use of EGOFETs for environmental monitoring.

Temporal Changes in Source–Drain Current for Organic Field-Effect Transistors Caused by Dipole on Insulator Surface

2008 ◽  
Vol 1 ◽  
pp. 061801 ◽  
Author(s):  
Kouji Suemori ◽  
Misuzu Taniguchi ◽  
Sei Uemura ◽  
Manabu Yoshida ◽  
Satoshi Hoshino ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Temporal Changes ◽  
Organic Field Effect Transistors ◽  
Insulator Surface

High Performance Organic Field-Effect Transistors and Integrated Inverters

2001 ◽  
Vol 665 ◽  
Author(s):  
A. Ullmann ◽  
J. Ficker ◽  
W. Fix ◽  
H. Rost ◽  
W. Clemens ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Drain Current ◽  
Organic Field Effect Transistors ◽  
Metal Contacts ◽  
Gate Electrodes ◽  
Polymer Semiconductors ◽  
Set Up

ABSTRACTIntegrated plastic circuits (IPCs) will become an integral component of future low cost electronics. For low cost processes IPCs have to be made of all-polymer Transistors. We present our recent results on fabrication of Organic Field-Effect Transistors (OFETs) and integrated inverters. Top-gate transistors were fabricated using polymer semiconductors and insulators. The source-drain structures were defined by standard lithography of Au on a flexible plastic film, and on top of these electrodes, poly(3-alkylthiophene) (P3AT) as semiconductor, and poly(4-hydroxystyrene) (PHS) as insulator were homogeneously deposited by spin-coating. The gate electrodes consist of metal contacts. With this simple set-up, the transistors exhibit excellent electric performance with a high source-drain current at source - drain and gate voltages below 30V. The characteristics show very good saturation behaviour for low biases and are comparable to results published for precursor pentacene. With this setup we obtain a mobility of 0.2cm2/Vs for P3AT. Furthermore, we discuss organic integrated inverters exhibiting logic capability. All devices show shelf-lives of several months without encapsulation.

Photoresponse Of Organic Field-Effect Transistors Based On Soluble Semiconductors And Dielectrics

2005 ◽  
Vol 871 ◽  
Author(s):  
Nenad Marjanović ◽  
Th. B. Singh ◽  
Serap Günes ◽  
Helmut Neugebauer ◽  
Niyazi Serdar Sariciftci
Keyword(s):  
Conjugated Polymer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Bulk Heterojunction ◽  
Device Performance ◽  
Organic Field Effect Transistors ◽  
Semiconductor Interface ◽  
Polymeric Dielectrics ◽  
Organic Dielectric ◽  
Type Transistor

AbstractPhotoactive organic field-effect transistors, photOFETs, based on a conjugated polymer/fullerene blend, MDMO-PPV: PCBM (1:4), and polymeric dielectrics as polyvinylalcohol (PVA) or divinyltetramethyldisiloxane-bis(benzocyclobutene) (BCB) with top source and drain electrodes were fabricated and characterized in dark and under AM1.5 illumination. With LiF/Al as top source and drain contacts the devices feature n-type transistor behavior in dark with electron mobility of 10-2cm2/Vs. Under illumination, a large free carrier concentration from photo-induced charge transfer at the polymer/fullerene bulk heterojunction (photodoping) is created. The device performance was studied with different illumination intensities and showed to be strongly influenced by the nature of the organic dielectric/organic semiconductor interface resulting in phototransistor behavior in BCB-based photOFETs and in phototransistor or photoresistor behavior for PVA-based photOFETs.

scholarly journals Continuous Monitoring of pH and Blood Gases Using Ion-Sensitive and Gas-Sensitive Field Effect Transistors Operating in the Amperometric Mode in Presence of Drift

Biosensors ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 44 ◽  
Author(s):  
Shahriar Jamasb
Keyword(s):  
Low Power ◽  
Field Effect ◽  
Continuous Monitoring ◽  
Field Effect Transistors ◽  
Blood Gases ◽  
Drain Current ◽  
Current Mode ◽  
Design Parameters ◽  
Mode Of Operation ◽  
Measuring Signal

Accurate and cost-effective integrated sensor systems for continuous monitoring of pH and blood gases continue to be in high demand. The capacity of ion-selective and Gas-sensitive field effect transistors (FETs) to serve as low-power sensors for accurate continuous monitoring of pH and blood gases is evaluated in the amperometric or current mode of operation. A stand-alone current-mode topology is employed in which a constant bias is applied to the gate with the drain current serving as the measuring signal. Compared with voltage-mode operation (e.g., in the feedback mode in ion-selective FETs), current-mode topologies offer the advantages of small size and low power consumption. However, the ion-selective FET (ISFET) and the Gas-sensitive FET (GasFET) exhibit a similar drift behavior, imposing a serious limitation on the accuracy of these sensors for continuous monitoring applications irrespective of the mode of operation. Given the slow temporal variation associated with the drift characteristics in both devices, a common post-processing technique that involves monitoring the variation of the drain current over short intervals of time can potentially allow extraction of the measuring signal in presence of drift in both sensor types. Furthermore, in the amperometric mode the static sensitivity of a FET-based sensor, given by the product of the FET transconductance and the sensitivity of the device threshold voltage to the measurand concentration, can be increased by adjusting the device design parameters. Increasing the sensitivity, while of interest in its own right, also enhances the accuracy of the proposed method. Rigorous analytical validation of the method is presented for GasFET operation in the amperometric mode. Moreover, the correction algorithm is verified experimentally using a Si3N4-gate ISFET operating in the amperometric mode to monitor pH variations ranging from 3.5 to 10.

Radical polymers improve the metal-semiconductor interface in organic field-effect transistors

2016 ◽  
Vol 37 ◽  
pp. 148-154 ◽  
Author(s):  
Seung Hyun Sung ◽  
Nikhil Bajaj ◽  
Jeffrey F. Rhoads ◽  
George T. Chiu ◽  
Bryan W. Boudouris
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Semiconductor Interface

Time variation of source-drain current for organic field-effect transistors with dipoles of insulator surface

2010 ◽  
Vol 8 (2) ◽  
pp. 601-603 ◽  
Author(s):  
Kouji Suemori ◽  
Misuzu Taniguchi ◽  
Sei Uemura ◽  
Manabu Yoshida ◽  
Satoshi Hoshino ◽  
...  
Keyword(s):  
Time Variation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Organic Field Effect Transistors ◽  
Insulator Surface
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