Ion‐induced secondary electron emission in SiH4glow discharge, and temperature dependence of hydrogenated amorphous silicon deposition rate

1993 ◽  
Vol 73 (5) ◽  
pp. 2578-2580 ◽  
Author(s):  
Christian Böhm ◽  
Jérôme Perrin ◽  
Pere Roca i Cabarrocas
Keyword(s):  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Deposition Rate ◽  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Deposition ◽  
Hydrogenated Amorphous

Mechanical Spectroscopy Study on the Light Soaking Effect on Hydrogenated Amorphous Silicon

2012 ◽  
Vol 184 ◽  
pp. 416-421 ◽  
Author(s):  
H. Mizubayashi ◽  
I. Sakata ◽  
H. Tanimoto
Keyword(s):  
Internal Friction ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Wide Distribution ◽  
Activation Energies ◽  
Mechanical Spectroscopy ◽  
Induced Changes ◽  
Mild Temperature ◽  
Hydrogenated Amorphous

For hydrogenated amorphous silicon (a-Si:H) films deposited at temperatures between 423 K and 623 K (a-Si:H423Kand so on), the light-induced changes in the internal friction between 80 K and 400 K were studied. The internal friction is associated with H2motion in microvoid networks, and shows the mild temperature dependence between about 80 K and 300 K (Q-180-300K) and the almost linear increase above 300 K (Q-1>300K). BothQ-180-300KandQ-1>300Kdecrease with increasing the deposition temperature, and show the mild temperature dependence ina-Si:H623K. The white light soaking with 100 mW/cm2(WLS100and so on) below 300 K caused a change inQ-180-300Kand no changes inQ-1>300K, respectively, and the light-induced changes inQ-180-300Krecovered after annealing at 423 K. The wide distribution of activation energies for H2motions between microvoids indicate that most of neighboring microvoids are connected through windows, i.e., the microvoid networks are existing ina-Si:H, and the spatially loose or solid structures are responsible for the low or high activation energies for the H2motion between microvoids, respectively. Furthermore, the light-induced hydrogen evolution (LIHE) was observed for WLS200to WLS400in a vacuum between 400 and 500 K, resulting in the disappearance of the internal friction due to the H2motion in the microvoid network.

Hydrogenated Amorphous Silicon Films Prepared by Mercury Sensitized Photochemical Vapor Deposition

1989 ◽  
Vol 149 ◽  
Author(s):  
Takaaki Kamimura ◽  
Hidetoshi Nozaki ◽  
Naoshi Sakuma ◽  
Mitsuo Nakajima ◽  
Hiroshi Ito
Keyword(s):  
Amorphous Silicon ◽  
Deposition Rate ◽  
Hydrogenated Amorphous Silicon ◽  
Gas Phase Reactions ◽  
Bond Density ◽  
Hydrogen Elimination ◽  
Photochemical Vapor Deposition ◽  
The Relationship ◽  
Hydrogenated Amorphous ◽  
Activation Type

ABSTRACTHydrogenated amorphous silicon (a-Si:H) films were prepared by mercury photosensitized decomposition of silane using a low-pressure mercury lamp. The deposition rate showed an activation type for substrate temperature (the activation energy: 0.13 eV), because the deposition rate would be determined by the rate of hydrogen elimination from the hydrogen saturated surface. Moreover, the relationship was found between the Si-H2 bond density in a- Si:H films and the gas phase reactions.

Temperature dependence of hydrogenated amorphous silicon solar cell performances

2016 ◽  
Vol 119 (4) ◽  
pp. 044505 ◽  
Author(s):  
Y. Riesen ◽  
M. Stuckelberger ◽  
F.-J. Haug ◽  
C. Ballif ◽  
N. Wyrsch
Keyword(s):  
Solar Cell ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Silicon Solar Cell ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Silicon Solar Cell ◽  
Hydrogenated Amorphous

The effect of ion-surface and ion-bulk interactions during hydrogenated amorphous silicon deposition

2007 ◽  
Vol 102 (7) ◽  
pp. 073523 ◽  
Author(s):  
A. H. M. Smets ◽  
W. M. M. Kessels ◽  
M. C. M. van de Sanden
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Deposition ◽  
Hydrogenated Amorphous
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