Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy

1986 ◽  
Vol 25 (Part 2, No. 10) ◽  
pp. L868-L870 ◽  
Author(s):  
Yoshiji Horikoshi ◽  
Minoru Kawashima ◽  
Hiroshi Yamaguchi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Well ◽  
Molecular Beam ◽  
Temperature Growth ◽  
Low Temperature Growth

Low‐temperature growth of high resistivity GaP by gas‐source molecular beam epitaxy

1992 ◽  
Vol 61 (14) ◽  
pp. 1646-1648 ◽  
Author(s):  
J. Ramdani ◽  
Y. He ◽  
M. Leonard ◽  
N. El‐Masry ◽  
S. M. Bedair
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
High Resistivity ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Gas Source

Low-temperature growth properties of Si1−xGex by disilane and solid-Ge molecular beam epitaxy

1998 ◽  
Vol 193 (4) ◽  
pp. 535-540 ◽  
Author(s):  
J.P. Liu ◽  
M.Y. Kong ◽  
J.P. Li ◽  
X.F. Liu ◽  
D.D. Huang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Growth Properties
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