Initial Stage and Domain Structure of GaAs Grown on Si(100) by Molecular Beam Epitaxy

1987 ◽  
Vol 26 (Part 2, No. 2) ◽  
pp. L114-L116 ◽  
Author(s):  
Mitsuo Kawabe ◽  
Toshio Ueda ◽  
Hidetoshi Takasugi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Domain Structure ◽  
Molecular Beam ◽  
Initial Stage

RHEED studies of initial stage of Ge film growth on (311)Si by gas source molecular beam epitaxy

1993 ◽  
Vol 128 (1-4) ◽  
pp. 319-326 ◽  
Author(s):  
Y. Yasuda ◽  
K. Itoh ◽  
N. Ohshima ◽  
Y. Koide ◽  
S. Zaima
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Film Growth ◽  
Gas Source ◽  
Initial Stage

Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy

2018 ◽  
Vol 52 (12) ◽  
pp. 1529-1533 ◽  
Author(s):  
A. M. Mizerov ◽  
S. N. Timoshnev ◽  
M. S. Sobolev ◽  
E. V. Nikitina ◽  
K. Yu. Shubina ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nitrogen Plasma ◽  
Initial Stage

Initial stage for heteroepitaxy of 3C–SiC on the Si(001) surface in dimethylgermane source molecular beam epitaxy

1997 ◽  
Vol 70 (11) ◽  
pp. 1411-1413 ◽  
Author(s):  
Tomoaki Hatayama ◽  
Norihiro Tanaka ◽  
Takashi Fuyuki ◽  
Hiroyuki Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Initial Stage

Initial stage of epitaxial growth at low temperature of GaAs and AlAs on Si by atomic layer molecular beam epitaxy (ALMBE) and MBE

1992 ◽  
Vol 123 (3-4) ◽  
pp. 385-392 ◽  
Author(s):  
Y. González ◽  
L. González ◽  
F. Briones ◽  
A. Vilá ◽  
A. Cornet ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Initial Stage

Initial stage of GaN nucleation on 30°-Ga reconstructed 4H-SiC()Si by molecular-beam epitaxy

2003 ◽  
Vol 527 (1-3) ◽  
pp. L197-L202 ◽  
Author(s):  
K. Jeganathan ◽  
M. Shimuzu ◽  
H. Okumura ◽  
F. Hirose ◽  
S. Nishizawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Initial Stage
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