High-Quality p-Type µc-Si Films Prepared by the Solid Phase Crystallization Method

1990 ◽  
Vol 29 (Part 1, No. 12) ◽  
pp. 2690-2693 ◽  
Author(s):  
Takao Matsuyama ◽  
Mikio Taguchi ◽  
Makoto Tanaka ◽  
Tsugufumi Matsuoka ◽  
Shinya Tsuda ◽  
...  
Keyword(s):  
Solid Phase ◽  
Solid Phase Crystallization ◽  
High Quality ◽  
Crystallization Method ◽  
Si Films ◽  
P Type

Solid-phase crystallization of high-quality Si films on SiO2 by local Ge-insertion

2004 ◽  
Vol 451-452 ◽  
pp. 489-492 ◽  
Author(s):  
I. Tsunoda ◽  
K. Nagatomo ◽  
A. Kenjo ◽  
T. Sadoh ◽  
M. Miyao
Keyword(s):  
Solid Phase ◽  
Solid Phase Crystallization ◽  
High Quality ◽  
Si Films

High-quality polycrystalline silicon thin film prepared by a solid phase crystallization method

1996 ◽  
Vol 198-200 ◽  
pp. 940-944 ◽  
Author(s):  
T. Matsuyama ◽  
N. Terada ◽  
T. Baba ◽  
T. Sawada ◽  
S. Tsuge ◽  
...  
Keyword(s):  
Thin Film ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Silicon Thin Film ◽  
Solid Phase Crystallization ◽  
High Quality ◽  
Crystallization Method

Preparation of High-Quality poly-Si and μc-Si Films by the SPC Method

1989 ◽  
Vol 164 ◽  
Author(s):  
T. Matsuyama ◽  
M. Nishikuni ◽  
M. Kameda ◽  
S. Okamoto ◽  
M. Tanaka ◽  
...  
Keyword(s):  
Solar Cell ◽  
Conversion Efficiency ◽  
Solid Phase ◽  
Wavelength Region ◽  
Optical Transmittance ◽  
High Quality ◽  
Long Wavelength ◽  
Si Solar Cell ◽  
Si Films ◽  
P Type

AbstractWe have achieved the highest total area conversion efficiency for an integrated type 10cm × 10cm a-Si solar cell at 10.2%. This value is the world record for a 10cm × 10cm a-Si solar cell. For further improvement of conversion efficiency in a-Si solar cells, it is necessary to develop materials with high-photosensitivity in the long wavelength region and materials with high conductivity. We have developed a Solid Phase Crystallization (SPC) method of growing a Si crystal at temperatures as low as 600°C. Using this method, thin-film polycrystalline silicon (poly-Si) with higP-photosensitivity in the long wavelength region and Hall mobility of 70cm2/V sec was obtained and quantum efficiency in the range of 800,∼ lO00nm was achieved up to 80% in the n-type poly-Si with grain size of about 2μm. We also succeeded in preparing a device-quality p-type microcrystalline silicon (μc-Si) using the SPC method at 620°C for 3 hours from the conventional plasma-CVD p-type amorphous silicon (a-5i) withoul using any post-doping process. Obtained properties of μd=2 × 103 (.cm) and a high optical transmittance in the 2.0 ∼ 3.0 eV range are better as a window material than the conventional p-type μc-Si:H. Therefore, it was concluded that the SPC method is better as a new technique to prepare high-quality solar cell materials.

Preparation of High-Quality n-Type Poly-Si Films by the Solid Phase Crystallization (SPC) Method

1990 ◽  
Vol 29 (Part 1, No. 11) ◽  
pp. 2327-2331 ◽  
Author(s):  
Takao Matsuyama ◽  
Kenichiro Wakisaka ◽  
Masaaki Kameda ◽  
Makoto Tanaka ◽  
Tsugufumi Matsuoka ◽  
...  
Keyword(s):  
Solid Phase ◽  
Solid Phase Crystallization ◽  
High Quality ◽  
Si Films

Electrical Properties of Polycrystalline Si1-xGexThin-Films Prepared by a Solid-Phase Crystallization Method

2003 ◽  
Vol 42 (Part 2, No. 11A) ◽  
pp. L1308-L1311 ◽  
Author(s):  
Yoichiro Aya ◽  
Katsutoshi Takeda ◽  
Kenichiro Wakisaka ◽  
Koji Nishio
Keyword(s):  
Electrical Properties ◽  
Solid Phase ◽  
Solid Phase Crystallization ◽  
Crystallization Method

Polycrystalline Silicon Films Formed by Solid-Phase Crystallization of Amorphous Silicon: the Substrate Effects on Crystallization Kinetics and Mechanism

1996 ◽  
Vol 424 ◽  
Author(s):  
Y.-H. Song ◽  
S.-Y. Kang ◽  
K. I. Cho ◽  
H. J. Yoo ◽  
J. H. Kim ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Solid Phase Crystallization ◽  
Substrate Effects ◽  
Random Nucleation ◽  
Pressure Chemical ◽  
Si Films ◽  
Polycrystalline Silicon Films ◽  
Induced Crystallization

AbstractThe substrate effects on the solid-phase crystallization of amorphous silicon (a-Si) have been extensively investigated. The a-Si films were prepared on two kinds of substrates, a thermally oxidized Si wafer (SiO2/Si) and a quartz, by low-pressure chemical vapor deposition (LPCVD) using Si2H6 gas at 470 °C and annealed at 600 °C in an N2 ambient for crystallization. The analysis using XRD and Raman scattering shows that crystalline nuclei are faster formed on the SiO2/Si than on the quartz, and the time needed for the complete crystallization of a-Si films on the SiO2/Si is greatly reduced to 8 h from ˜15 h on the quartz. In this study, it was first observed that crystallization in the a-Si deposited on the SiO2/Si starts from the interface between the a-Si film and the thermal oxide of the substrate, called interface-induced crystallization, while random nucleation process dominates on the quartz. The very smooth surface of the SiO2/Si substrate is responsible for the observed interface-induced crystallization of a-Si films.

CO2 reforming of CH4 over Ni/perovskite catalysts prepared by solid phase crystallization method

1999 ◽  
Vol 183 (2) ◽  
pp. 273-285 ◽  
Author(s):  
Takashi Hayakawa ◽  
Shu Suzuki ◽  
Junji Nakamura ◽  
Toshio Uchijima ◽  
Satoshi Hamakawa ◽  
...  
Keyword(s):  
Solid Phase ◽  
Solid Phase Crystallization ◽  
Co2 Reforming ◽  
Co2 Reforming Of Ch4 ◽  
Crystallization Method ◽  
Perovskite Catalysts

Improvement of n-Type Poly-Si Film Properties by Solid Phase Crystallization Method

1993 ◽  
Vol 32 (Part 1, No. 9A) ◽  
pp. 3720-3728 ◽  
Author(s):  
Takao Matsuyama ◽  
Makoto Tanaka ◽  
Shinya Tsuda ◽  
Shoichi Nakano ◽  
Yukinori Kuwano
Keyword(s):  
Solid Phase ◽  
Solid Phase Crystallization ◽  
Film Properties ◽  
Crystallization Method
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