High-quality polycrystalline silicon thin film prepared by a solid phase crystallization method

1996 ◽  
Vol 198-200 ◽  
pp. 940-944 ◽  
Author(s):  
T. Matsuyama ◽  
N. Terada ◽  
T. Baba ◽  
T. Sawada ◽  
S. Tsuge ◽  
...  
Keyword(s):  
Thin Film ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Silicon Thin Film ◽  
Solid Phase Crystallization ◽  
High Quality ◽  
Crystallization Method

High-Quality Polycrystalline Silicon Thin Film Prepared by a Solid Phase Crystallization Method

1994 ◽  
Vol 358 ◽  
Author(s):  
T. Baba ◽  
T. Matsuyama ◽  
T. Sawada ◽  
T. Takahama ◽  
K. Wakisaka ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Silicon Film ◽  
Columnar Structure ◽  
High Electron ◽  
Silicon Thin Film ◽  
Solid Phase Crystallization ◽  
Crystallization Method ◽  
First Time ◽  
Polycrystalline Silicon Film

ABSTRACTWe succeeded, for the first time, in depositing a silicon film which features 1000Å-wide single-crystalline grains embedded in a matrix of amorphous tissue. The deposition was done by plasma-enhanced CVD from silane diluted with hydrogen at a considerably high temperature (550°C). 5pm-thick undoped amorphous silicon film was deposited on the above film and was crystallized by a solid phase crystallization method. The polycrystalline silicon film which was obtained has a columnar structure and shows an extremely high electron mobility of 808 cm2/Vs.

Bridged-Grain Solid-Phase-Crystallized Polycrystalline-Silicon Thin-Film Transistors

2012 ◽  
Vol 33 (10) ◽  
pp. 1414-1416 ◽  
Author(s):  
Wei Zhou ◽  
Zhiguo Meng ◽  
Shuyun Zhao ◽  
Meng Zhang ◽  
Rongsheng Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Silicon Thin Film

Device Characteristics of a Poly-Silicon Thin Film Transistor Fabricated by Milc at Low Temperature

1996 ◽  
Vol 424 ◽  
Author(s):  
Seok-Woon Lee ◽  
Byung-IL Lee ◽  
Tae-Hyung Ihn ◽  
Tae-Kyung Kim ◽  
Young-Tae Kang ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Solid Phase ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Solid Phase Crystallization ◽  
Thin Nickel ◽  
One Step ◽  
Lateral Crystallization ◽  
Si Films

AbstractHigh performance poly-Si thin film transistors were fabricated by using a new crystallization method, Metal-Induced Lateral Crystallization (MILC). The process temperature was kept below 500°C throughout the fabrication. After the gate definition, thin nickel films were deposited on top of the TFT's without an additional mask, and with a one-step annealing at 500°C, the activation of the dopants in source/drain/gate a-Si films was achieved simultaneously with the crystallization of the a-Si films in the channel area. Even without a post-hydrogenation passivation, mobilities of the MILC TFT's were measured to be as high as 120cm2/Vs and 90cm2/Vs for n-channel and p-channel, respectively. These values are much higher than those of the poly-Si TFT's fabricated by conventional solid-phase crystallization at around 6001C.

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