Low Temperature Poly-Si TFTs Using Solid Phase Crystallization of Very Thin Films and an Electron Cyclotron Resonance Chemical Vapor Deposition Gate Insulator
1991 ◽
Vol 30
(Part 1, No. 12B)
◽
pp. 3724-3728
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Low‐Temperature Si Epitaxial Growth by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
1992 ◽
Vol 139
(7)
◽
pp. 1983-1988
◽